FR2227645A1 - - Google Patents
Info
- Publication number
- FR2227645A1 FR2227645A1 FR7330927A FR7330927A FR2227645A1 FR 2227645 A1 FR2227645 A1 FR 2227645A1 FR 7330927 A FR7330927 A FR 7330927A FR 7330927 A FR7330927 A FR 7330927A FR 2227645 A1 FR2227645 A1 FR 2227645A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4744573A JPS49134282A (de) | 1973-04-25 | 1973-04-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2227645A1 true FR2227645A1 (de) | 1974-11-22 |
| FR2227645B1 FR2227645B1 (de) | 1977-08-05 |
Family
ID=12775330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7330927A Expired FR2227645B1 (de) | 1973-04-25 | 1973-08-27 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS49134282A (de) |
| CA (1) | CA993567A (de) |
| DE (1) | DE2339444C2 (de) |
| FR (1) | FR2227645B1 (de) |
| GB (1) | GB1412904A (de) |
| IT (1) | IT993383B (de) |
| NL (1) | NL7312535A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2480502A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication |
| EP0038248A1 (de) * | 1980-04-14 | 1981-10-21 | Thomson-Csf | Leistungsperrschichtfeldeffekttransistor mit vertikaler Kanalzone und Verfahren zu seiner Herstellung |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2503800C2 (de) * | 1975-01-30 | 1984-02-16 | Sony Corp., Tokyo | Sperrschicht-Feldeffekttransistor |
| JPS51129184A (en) * | 1975-05-02 | 1976-11-10 | Nec Corp | Vertical type field efect transistor |
| JPS5342683A (en) * | 1976-09-30 | 1978-04-18 | Mitsubishi Electric Corp | Vertical field effect transistor |
| JPS5846874B2 (ja) * | 1977-04-27 | 1983-10-19 | 三菱電機株式会社 | 接合型電界効果トランジスタ |
| JPS5680172A (en) * | 1979-12-04 | 1981-07-01 | Seiko Epson Corp | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1539877A1 (de) * | 1965-11-19 | 1969-12-11 | Itt Ind Gmbh Deutsche | Schaltbares Halbleiterbauelement |
| FR2147883B1 (de) * | 1971-08-05 | 1977-01-28 | Teszner Stanislas |
-
1973
- 1973-04-25 JP JP4744573A patent/JPS49134282A/ja active Pending
- 1973-08-01 GB GB3662573A patent/GB1412904A/en not_active Expired
- 1973-08-03 DE DE19732339444 patent/DE2339444C2/de not_active Expired
- 1973-08-27 FR FR7330927A patent/FR2227645B1/fr not_active Expired
- 1973-09-11 NL NL7312535A patent/NL7312535A/xx not_active Application Discontinuation
- 1973-09-24 IT IT2926973A patent/IT993383B/it active
- 1973-12-13 CA CA188,102A patent/CA993567A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2480502A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication |
| EP0038248A1 (de) * | 1980-04-14 | 1981-10-21 | Thomson-Csf | Leistungsperrschichtfeldeffekttransistor mit vertikaler Kanalzone und Verfahren zu seiner Herstellung |
| EP0038239A1 (de) * | 1980-04-14 | 1981-10-21 | Thomson-Csf | Sperrfähige Diode und Verfahren zu ihrer Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS49134282A (de) | 1974-12-24 |
| GB1412904A (en) | 1975-11-05 |
| CA993567A (en) | 1976-07-20 |
| IT993383B (it) | 1975-09-30 |
| DE2339444C2 (de) | 1985-05-15 |
| NL7312535A (de) | 1974-10-29 |
| FR2227645B1 (de) | 1977-08-05 |
| DE2339444A1 (de) | 1974-10-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property |