IT966124B - Circuito integrato monolitico e metodo per produrlo - Google Patents

Circuito integrato monolitico e metodo per produrlo

Info

Publication number
IT966124B
IT966124B IT5308172A IT5308172A IT966124B IT 966124 B IT966124 B IT 966124B IT 5308172 A IT5308172 A IT 5308172A IT 5308172 A IT5308172 A IT 5308172A IT 966124 B IT966124 B IT 966124B
Authority
IT
Italy
Prior art keywords
producing
integrated circuit
monolithic integrated
monolithic
circuit
Prior art date
Application number
IT5308172A
Other languages
English (en)
Italian (it)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT966124B publication Critical patent/IT966124B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
IT5308172A 1971-09-30 1972-09-30 Circuito integrato monolitico e metodo per produrlo IT966124B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46076438A JPS4842685A (zh) 1971-09-30 1971-09-30

Publications (1)

Publication Number Publication Date
IT966124B true IT966124B (it) 1974-02-11

Family

ID=13605139

Family Applications (1)

Application Number Title Priority Date Filing Date
IT5308172A IT966124B (it) 1971-09-30 1972-09-30 Circuito integrato monolitico e metodo per produrlo

Country Status (7)

Country Link
JP (1) JPS4842685A (zh)
CA (1) CA959973A (zh)
DE (1) DE2247911C2 (zh)
FR (1) FR2154786B1 (zh)
GB (1) GB1368190A (zh)
IT (1) IT966124B (zh)
NL (1) NL7213284A (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor
DE2740449C2 (de) * 1977-09-08 1986-08-21 Röhm GmbH, 6100 Darmstadt Verfahren zur Herstellung von Schmierölzusätzen
CA1120269A (en) * 1978-05-25 1982-03-23 Robert D. Tack Additive combinations and fuels containing them
FR2523370B1 (fr) * 1982-03-12 1985-12-13 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
JPS61126120A (ja) * 1984-11-22 1986-06-13 Mitsui Petrochem Ind Ltd 液状変性エチレン系ランダム共重合体
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
JPH03138974A (ja) * 1989-10-24 1991-06-13 Toshiba Corp Ｂｉ―ＣＭＯＳ集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Also Published As

Publication number Publication date
JPS4842685A (zh) 1973-06-21
NL7213284A (zh) 1973-04-03
FR2154786B1 (zh) 1978-03-10
GB1368190A (en) 1974-09-25
CA959973A (en) 1974-12-24
DE2247911A1 (de) 1973-04-05
FR2154786A1 (zh) 1973-05-11
DE2247911C2 (de) 1985-01-17

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