IT9021779A0 - Pilota bicmos di livello ttl - Google Patents

Pilota bicmos di livello ttl

Info

Publication number
IT9021779A0
IT9021779A0 IT21779A IT2177990A IT9021779A0 IT 9021779 A0 IT9021779 A0 IT 9021779A0 IT 21779 A IT21779 A IT 21779A IT 2177990 A IT2177990 A IT 2177990A IT 9021779 A0 IT9021779 A0 IT 9021779A0
Authority
IT
Italy
Prior art keywords
pilot
ttl level
bicmos
level bicmos
ttl
Prior art date
Application number
IT21779A
Other languages
English (en)
Other versions
IT1243456B (it
IT9021779A1 (it
Inventor
Myng Jun Choe
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of IT9021779A0 publication Critical patent/IT9021779A0/it
Publication of IT9021779A1 publication Critical patent/IT9021779A1/it
Application granted granted Critical
Publication of IT1243456B publication Critical patent/IT1243456B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/088—Transistor-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/0414—Anti-saturation measures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/001—Arrangements for reducing power consumption in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H03K19/0136—Modifications for accelerating switching in bipolar transistor circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Traffic Control Systems (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
IT02177990A 1989-12-29 1990-10-18 Pilota bicmos di livello ttl IT1243456B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020225A KR920010212B1 (ko) 1989-12-29 1989-12-29 바이씨모스 ttl레벨 출력구동회로

Publications (3)

Publication Number Publication Date
IT9021779A0 true IT9021779A0 (it) 1990-10-18
IT9021779A1 IT9021779A1 (it) 1992-04-18
IT1243456B IT1243456B (it) 1994-06-10

Family

ID=19294274

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02177990A IT1243456B (it) 1989-12-29 1990-10-18 Pilota bicmos di livello ttl

Country Status (7)

Country Link
US (1) US5103119A (it)
JP (1) JPH0738582B2 (it)
KR (1) KR920010212B1 (it)
DE (1) DE4032733A1 (it)
FR (1) FR2656749B1 (it)
GB (1) GB2239750B (it)
IT (1) IT1243456B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920010212B1 (ko) 1989-12-29 1992-11-21 삼성전자 주식회사 바이씨모스 ttl레벨 출력구동회로
DE69411312T2 (de) * 1993-04-19 1999-02-11 Philips Electronics N.V., Eindhoven BiCMOS Ausgangstreiberschaltung
JP3881337B2 (ja) * 2003-12-26 2007-02-14 ローム株式会社 信号出力回路及びそれを有する電源電圧監視装置
KR101683877B1 (ko) * 2009-10-23 2016-12-07 엘지이노텍 주식회사 전원 공급 보호 장치
WO2012085666A1 (en) * 2010-12-20 2012-06-28 Diodes Zetex Semiconductors Limited Monolithic darlington with intermediate base contact

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441068A (en) * 1981-10-22 1984-04-03 Kollmorgen Technologies Corporation Bipolar linear current source driver amplifier for switching loads
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
US4472647A (en) * 1982-08-20 1984-09-18 Motorola, Inc. Circuit for interfacing with both TTL and CMOS voltage levels
EP0101751B1 (de) * 1982-08-25 1991-08-21 Ibm Deutschland Gmbh Transistor-Leistungsverstärker mit verringerten Schaltzeiten
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
JPS60141011A (ja) * 1983-12-28 1985-07-26 Nec Corp コレクタ飽和抑制回路
JPS60141016A (ja) * 1983-12-28 1985-07-26 Nec Corp 出力回路
JPS60177723A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 出力回路
JPS62171226A (ja) * 1986-01-22 1987-07-28 Nec Corp 出力回路
US4703203A (en) * 1986-10-03 1987-10-27 Motorola, Inc. BICMOS logic having three state output
JPS63193720A (ja) * 1987-02-06 1988-08-11 Toshiba Corp 論理回路
JPS63202126A (ja) * 1987-02-17 1988-08-22 Toshiba Corp 論理回路
JPH01114214A (ja) * 1987-10-28 1989-05-02 Nec Corp 出力回路
US4857776A (en) * 1987-11-20 1989-08-15 Tandem Computers Incorporated True TTL output translator-driver with true ECL tri-state control
US4810903A (en) * 1987-12-14 1989-03-07 Motorola, Inc. BICMOS driver circuit including submicron on chip voltage source
US4970414A (en) * 1989-07-07 1990-11-13 Silicon Connections Corporation TTL-level-output interface circuit
KR920010212B1 (ko) 1989-12-29 1992-11-21 삼성전자 주식회사 바이씨모스 ttl레벨 출력구동회로

Also Published As

Publication number Publication date
GB9022335D0 (en) 1990-11-28
DE4032733A1 (de) 1991-08-08
IT1243456B (it) 1994-06-10
KR920010212B1 (ko) 1992-11-21
JPH0738582B2 (ja) 1995-04-26
IT9021779A1 (it) 1992-04-18
FR2656749B1 (fr) 1993-12-24
FR2656749A1 (fr) 1991-07-05
GB2239750A (en) 1991-07-10
GB2239750B (en) 1994-09-07
DE4032733C2 (it) 1992-11-05
JPH03216017A (ja) 1991-09-24
KR910013738A (ko) 1991-08-08
US5103119A (en) 1992-04-07

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971028