IT8619906A1 - Procedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositivi cmos e dispositivi elettronici ad alta tensione - Google Patents
Procedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositivi cmos e dispositivi elettronici ad alta tensioneInfo
- Publication number
- IT8619906A1 IT8619906A1 IT1986A19906A IT1990686A IT8619906A1 IT 8619906 A1 IT8619906 A1 IT 8619906A1 IT 1986A19906 A IT1986A19906 A IT 1986A19906A IT 1990686 A IT1990686 A IT 1990686A IT 8619906 A1 IT8619906 A1 IT 8619906A1
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- high voltage
- integrated circuits
- semiconductor integrated
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8236—Combination of enhancement and depletion transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT19906/86A IT1188465B (it) | 1986-03-27 | 1986-03-27 | Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione |
US07/028,842 US4892836A (en) | 1986-03-27 | 1987-03-23 | Method for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devices |
DE3751313T DE3751313T2 (de) | 1986-03-27 | 1987-03-24 | Verfahren zur Herstellung von CMOS- und Hochspannungs-elektronische-bauelemente beinhaltende Halbleiterbauelemente. |
EP87104271A EP0239060B1 (en) | 1986-03-27 | 1987-03-24 | Method for manufacturing semiconductor integrated circuits including cmos and high-voltage electronic devices |
JP62073939A JP2814079B2 (ja) | 1986-03-27 | 1987-03-26 | 半導体集積回路とその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT19906/86A IT1188465B (it) | 1986-03-27 | 1986-03-27 | Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione |
Publications (3)
Publication Number | Publication Date |
---|---|
IT8619906A0 IT8619906A0 (it) | 1986-03-27 |
IT8619906A1 true IT8619906A1 (it) | 1987-09-27 |
IT1188465B IT1188465B (it) | 1988-01-14 |
Family
ID=11162231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19906/86A IT1188465B (it) | 1986-03-27 | 1986-03-27 | Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione |
Country Status (5)
Country | Link |
---|---|
US (1) | US4892836A (it) |
EP (1) | EP0239060B1 (it) |
JP (1) | JP2814079B2 (it) |
DE (1) | DE3751313T2 (it) |
IT (1) | IT1188465B (it) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE35642E (en) * | 1987-12-22 | 1997-10-28 | Sgs-Thomson Microelectronics, S.R.L. | Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
IT1217323B (it) * | 1987-12-22 | 1990-03-22 | Sgs Microelettronica Spa | Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione |
US5011784A (en) * | 1988-01-21 | 1991-04-30 | Exar Corporation | Method of making a complementary BiCMOS process with isolated vertical PNP transistors |
US5116777A (en) * | 1990-04-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation |
US5446300A (en) * | 1992-11-04 | 1995-08-29 | North American Philips Corporation | Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit |
EP0683521B1 (en) * | 1994-05-19 | 2002-08-14 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Power integrated circuit ("PIC") structure, and manufacturing process thereof |
EP0751573A1 (en) * | 1995-06-30 | 1997-01-02 | STMicroelectronics S.r.l. | Integrated power circuit and corresponding manufacturing process |
US5602046A (en) * | 1996-04-12 | 1997-02-11 | National Semiconductor Corporation | Integrated zener diode protection structures and fabrication methods for DMOS power devices |
US5770880A (en) * | 1996-09-03 | 1998-06-23 | Harris Corporation | P-collector H.V. PMOS switch VT adjusted source/drain |
JP5096708B2 (ja) * | 2006-07-28 | 2012-12-12 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US30282A (en) * | 1860-10-09 | Quartz crusher and amalgamator | ||
US4054899A (en) * | 1970-09-03 | 1977-10-18 | Texas Instruments Incorporated | Process for fabricating monolithic circuits having matched complementary transistors and product |
US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
US4403395A (en) * | 1979-02-15 | 1983-09-13 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
US4325180A (en) * | 1979-02-15 | 1982-04-20 | Texas Instruments Incorporated | Process for monolithic integration of logic, control, and high voltage interface circuitry |
US4346512A (en) * | 1980-05-05 | 1982-08-31 | Raytheon Company | Integrated circuit manufacturing method |
US4637125A (en) * | 1983-09-22 | 1987-01-20 | Kabushiki Kaisha Toshiba | Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor |
JPH061816B2 (ja) * | 1983-09-30 | 1994-01-05 | 日本電気株式会社 | 半導体装置の製造方法 |
US4609413A (en) * | 1983-11-18 | 1986-09-02 | Motorola, Inc. | Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique |
IT1214806B (it) * | 1984-09-21 | 1990-01-18 | Ates Componenti Elettron | Dispositivo integrato monolitico di potenza e semiconduttore |
FR2571178B1 (fr) * | 1984-09-28 | 1986-11-21 | Thomson Csf | Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication |
-
1986
- 1986-03-27 IT IT19906/86A patent/IT1188465B/it active
-
1987
- 1987-03-23 US US07/028,842 patent/US4892836A/en not_active Expired - Lifetime
- 1987-03-24 EP EP87104271A patent/EP0239060B1/en not_active Expired - Lifetime
- 1987-03-24 DE DE3751313T patent/DE3751313T2/de not_active Expired - Fee Related
- 1987-03-26 JP JP62073939A patent/JP2814079B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3751313T2 (de) | 1996-02-01 |
JP2814079B2 (ja) | 1998-10-22 |
EP0239060A3 (en) | 1989-11-15 |
JPS62237757A (ja) | 1987-10-17 |
IT8619906A0 (it) | 1986-03-27 |
EP0239060B1 (en) | 1995-05-24 |
IT1188465B (it) | 1988-01-14 |
DE3751313D1 (de) | 1995-06-29 |
US4892836A (en) | 1990-01-09 |
EP0239060A2 (en) | 1987-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR900015344A (ko) | 단일의 집적회로칩에 고압 및 저압 cmos 트랜지스터를 형성하는 공정 | |
IT1248749B (it) | Convertitore di tensione interna in un circuito integrato a semiconduttori | |
DE3571535D1 (en) | Integrated circuit semiconductor device formed on a wafer | |
DE69026164D1 (de) | Halbleitende integrierte Schaltung | |
ITMI920845A0 (it) | Struttura di interconnessione di un dispositivo a circuito integrato asemicondutture e suo prcedimento di fabbricazione | |
DE69124735D1 (de) | Integrierte Halbleiterschaltung | |
DE3855797D1 (de) | Integrierte Halbleiterschaltung | |
DE69118633D1 (de) | Spannungsgenerator für eine integrierte Halbleiterschaltung | |
DE69130819T2 (de) | Integrierte Halbleiterschaltung | |
KR860004457A (ko) | 반도체 집적회로장치 및 그의 제조방법과 제조장치 | |
DE59309544D1 (de) | Integrierter cmos-halbleiterschaltkreis | |
IT8619906A1 (it) | Procedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositivi cmos e dispositivi elettronici ad alta tensione | |
KR890012388A (ko) | Mis형 반도체 집적회로장치 | |
IT1188309B (it) | Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione | |
KR890015418A (ko) | 반도체 집적회로와 그 제조방법 | |
GB9019982D0 (en) | Semiconductor integrated circuit arrangements | |
IT1186338B (it) | Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione | |
DE69031671D1 (de) | Integrierte Halbleiterschaltung | |
KR860005450A (ko) | 반도체 집적 회로장치 및 그의 제조방법 | |
EP0200230A3 (en) | Logic integrated circuit device formed on compound semiconductor substrate | |
KR900012360A (ko) | 반도체 집적회로와 그 제조방법 | |
DE69026226D1 (de) | Integrierte Halbleiterschaltung | |
DE69129445D1 (de) | Integrierte halbleiterschaltungsanordnung | |
DE69124981D1 (de) | Bistabile integrierte Halbleiterschaltung | |
KR900007103A (ko) | 반도체 집적회로와 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970329 |