IT8167008A0 - Procedimento e dispositivo per l accrescimento di un nastro tirato da un bagno fuso particolarmente di un nastro di silicio per dispositivi semiconduttori - Google Patents

Procedimento e dispositivo per l accrescimento di un nastro tirato da un bagno fuso particolarmente di un nastro di silicio per dispositivi semiconduttori

Info

Publication number
IT8167008A0
IT8167008A0 IT8167008A IT6700881A IT8167008A0 IT 8167008 A0 IT8167008 A0 IT 8167008A0 IT 8167008 A IT8167008 A IT 8167008A IT 6700881 A IT6700881 A IT 6700881A IT 8167008 A0 IT8167008 A0 IT 8167008A0
Authority
IT
Italy
Prior art keywords
tape
melten
growing
bath
procedure
Prior art date
Application number
IT8167008A
Other languages
English (en)
Other versions
IT1143254B (it
Inventor
Emanuel M Sachs
Original Assignee
Emanuel M Sachs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/109,865 external-priority patent/US4661200A/en
Application filed by Emanuel M Sachs filed Critical Emanuel M Sachs
Publication of IT8167008A0 publication Critical patent/IT8167008A0/it
Application granted granted Critical
Publication of IT1143254B publication Critical patent/IT1143254B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT67008/81A 1980-01-07 1981-01-07 Procedimento e dispositivo per l accrescimento di un nastro tirato da un bagno fuso particolarmente di un nastro di silicio per dispositivi semiconduttori IT1143254B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/109,865 US4661200A (en) 1980-01-07 1980-01-07 String stabilized ribbon growth
US21474180A 1980-12-11 1980-12-11

Publications (2)

Publication Number Publication Date
IT8167008A0 true IT8167008A0 (it) 1981-01-07
IT1143254B IT1143254B (it) 1986-10-22

Family

ID=26807452

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67008/81A IT1143254B (it) 1980-01-07 1981-01-07 Procedimento e dispositivo per l accrescimento di un nastro tirato da un bagno fuso particolarmente di un nastro di silicio per dispositivi semiconduttori

Country Status (6)

Country Link
CA (1) CA1169336A (it)
DE (1) DE3100245A1 (it)
FR (1) FR2473072A1 (it)
GB (3) GB2067920B (it)
IL (1) IL61852A (it)
IT (1) IT1143254B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
DE3240245A1 (de) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen
EP0170119B1 (de) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung
FR2568490B1 (fr) * 1984-08-02 1986-12-05 Comp Generale Electricite Procede et dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
US6402839B1 (en) 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
AU2003284253A1 (en) 2002-10-18 2004-05-04 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US20080134964A1 (en) * 2006-12-06 2008-06-12 Evergreen Solar, Inc. System and Method of Forming a Crystal
FR2913434B1 (fr) * 2007-03-08 2009-11-20 Apollon Solar Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
US8304057B2 (en) 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
ATE550788T1 (de) * 2007-08-31 2012-04-15 Evergreen Solar Inc Faden mit verringerter benetzung für bandkristalle
CN102124150B (zh) 2008-08-18 2013-07-31 长青太阳能股份有限公司 控制气载污染物跨晶带表面的转移
KR20130110177A (ko) * 2010-10-01 2013-10-08 에버그린 솔라, 인크. 웨이퍼 중량의 함수로서의 시트 웨이퍼 처리
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB796878A (en) * 1955-06-27 1958-06-18 Telefunken Gmbh Improvements in or relating to methods of stirring molten electrically conductive material
NL241834A (it) * 1958-08-28 1900-01-01
US3129061A (en) * 1961-03-27 1964-04-14 Westinghouse Electric Corp Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
US3298795A (en) * 1964-03-23 1967-01-17 Westinghouse Electric Corp Process for controlling dendritic crystal growth
NL124684C (it) * 1964-07-29 1900-01-01
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
GB1271493A (en) * 1968-05-09 1972-04-19 Stanelco Thermatron Ltd Improved treatment process
US3639718A (en) * 1970-06-15 1972-02-01 Little Inc A Pressure- and temperature-controlled crystal growing apparatus
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
IT1055104B (it) * 1975-02-07 1981-12-21 Philips Nv Metodo di fabbricazione di dispositivi semiconduttori comportante la formazione di uno strato di materiale semiconduuttore su di un substrato apparato per l'attuazione di tale metodo e dispositivo semiconduttore fabbricato con l'ausilio di detto metodo
DE2520764A1 (de) * 1975-05-09 1976-11-18 Siemens Ag Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial

Also Published As

Publication number Publication date
GB2135594B (en) 1985-05-15
CA1169336A (en) 1984-06-19
GB2135595B (en) 1985-05-22
GB2067920B (en) 1984-10-24
DE3100245A1 (de) 1982-01-14
GB2135595A (en) 1984-09-05
GB8400734D0 (en) 1984-02-15
FR2473072B1 (it) 1984-09-14
DE3100245C2 (it) 1990-07-05
GB2067920A (en) 1981-08-05
FR2473072A1 (fr) 1981-07-10
GB2135594A (en) 1984-09-05
IL61852A (en) 1984-05-31
GB8400735D0 (en) 1984-02-15
IT1143254B (it) 1986-10-22

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