GB8400734D0 - String stabilized ribbon growth - Google Patents

String stabilized ribbon growth

Info

Publication number
GB8400734D0
GB8400734D0 GB848400734A GB8400734A GB8400734D0 GB 8400734 D0 GB8400734 D0 GB 8400734D0 GB 848400734 A GB848400734 A GB 848400734A GB 8400734 A GB8400734 A GB 8400734A GB 8400734 D0 GB8400734 D0 GB 8400734D0
Authority
GB
United Kingdom
Prior art keywords
ribbon growth
string
stabilized ribbon
string stabilized
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB848400734A
Other versions
GB2135594A (en
GB2135594B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sachs E M
Original Assignee
Sachs E M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/109,865 external-priority patent/US4661200A/en
Application filed by Sachs E M filed Critical Sachs E M
Publication of GB8400734D0 publication Critical patent/GB8400734D0/en
Publication of GB2135594A publication Critical patent/GB2135594A/en
Application granted granted Critical
Publication of GB2135594B publication Critical patent/GB2135594B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB08400734A 1980-01-07 1984-01-12 Ribbon growth of crystals Expired GB2135594B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/109,865 US4661200A (en) 1980-01-07 1980-01-07 String stabilized ribbon growth
US21474180A 1980-12-11 1980-12-11

Publications (3)

Publication Number Publication Date
GB8400734D0 true GB8400734D0 (en) 1984-02-15
GB2135594A GB2135594A (en) 1984-09-05
GB2135594B GB2135594B (en) 1985-05-15

Family

ID=26807452

Family Applications (3)

Application Number Title Priority Date Filing Date
GB8041489A Expired GB2067920B (en) 1980-01-07 1980-12-30 String stabilised ribbon growth of crystals
GB08400735A Expired GB2135595B (en) 1980-01-07 1984-01-12 String stabilised crystal growth
GB08400734A Expired GB2135594B (en) 1980-01-07 1984-01-12 Ribbon growth of crystals

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB8041489A Expired GB2067920B (en) 1980-01-07 1980-12-30 String stabilised ribbon growth of crystals
GB08400735A Expired GB2135595B (en) 1980-01-07 1984-01-12 String stabilised crystal growth

Country Status (6)

Country Link
CA (1) CA1169336A (en)
DE (1) DE3100245A1 (en)
FR (1) FR2473072A1 (en)
GB (3) GB2067920B (en)
IL (1) IL61852A (en)
IT (1) IT1143254B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
DE3240245A1 (en) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR PRODUCING TAPE-SHAPED SILICON BODIES FOR SOLAR CELLS
EP0170119B1 (en) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Process and apparatus for making silicon crystal films with a horizontal pulling direction
FR2568490B1 (en) * 1984-08-02 1986-12-05 Comp Generale Electricite METHOD AND DEVICE FOR DEPOSITING A POLYCRYSTALLINE SILICON LAYER ON A CARBON TAPE
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
US6402839B1 (en) 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
JP4527538B2 (en) 2002-10-18 2010-08-18 エバーグリーン ソーラー， インコーポレイテッド Method and apparatus for crystal growth
US6814802B2 (en) 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US20080134964A1 (en) * 2006-12-06 2008-06-12 Evergreen Solar, Inc. System and Method of Forming a Crystal
FR2913434B1 (en) * 2007-03-08 2009-11-20 Apollon Solar DEVICE AND METHOD FOR MANUFACTURING SELF-SUPPORTED PLATES OF SILICON OR OTHER CRYSTALLINE MATERIALS.
US8304057B2 (en) 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
CN101784701A (en) * 2007-08-31 2010-07-21 长青太阳能股份有限公司 Ribbon crystal string with extruded refractory material
ES2425885T3 (en) 2008-08-18 2013-10-17 Max Era, Inc. Procedure and apparatus for the development of a crystalline tape while controlling the transport of contaminants in suspension in a gas through a tape surface
KR20130110177A (en) * 2010-10-01 2013-10-08 에버그린 솔라, 인크. Sheet wafer processing as a function of wafer weight
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB796878A (en) * 1955-06-27 1958-06-18 Telefunken Gmbh Improvements in or relating to methods of stirring molten electrically conductive material
NL113205C (en) * 1958-08-28 1900-01-01
US3129061A (en) * 1961-03-27 1964-04-14 Westinghouse Electric Corp Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
US3298795A (en) * 1964-03-23 1967-01-17 Westinghouse Electric Corp Process for controlling dendritic crystal growth
NL124684C (en) * 1964-07-29 1900-01-01
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
GB1271493A (en) * 1968-05-09 1972-04-19 Stanelco Thermatron Ltd Improved treatment process
US3639718A (en) * 1970-06-15 1972-02-01 Little Inc A Pressure- and temperature-controlled crystal growing apparatus
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
GB1498925A (en) * 1975-02-07 1978-01-25 Philips Electronic Associated Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured
DE2520764A1 (en) * 1975-05-09 1976-11-18 Siemens Ag Single crystal ribbon pulling from fused semiconductor material - through orifice in salt bath to reduce surface tension

Also Published As

Publication number Publication date
FR2473072A1 (en) 1981-07-10
IL61852A (en) 1984-05-31
IT1143254B (en) 1986-10-22
DE3100245C2 (en) 1990-07-05
IT8167008A0 (en) 1981-01-07
GB2135594A (en) 1984-09-05
GB2067920A (en) 1981-08-05
GB2135595B (en) 1985-05-22
GB2135594B (en) 1985-05-15
GB8400735D0 (en) 1984-02-15
GB2067920B (en) 1984-10-24
FR2473072B1 (en) 1984-09-14
DE3100245A1 (en) 1982-01-14
CA1169336A (en) 1984-06-19
GB2135595A (en) 1984-09-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee