IT1311280B1 - Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. - Google Patents
Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione.Info
- Publication number
- IT1311280B1 IT1311280B1 IT1999TO001151A ITTO991151A IT1311280B1 IT 1311280 B1 IT1311280 B1 IT 1311280B1 IT 1999TO001151 A IT1999TO001151 A IT 1999TO001151A IT TO991151 A ITTO991151 A IT TO991151A IT 1311280 B1 IT1311280 B1 IT 1311280B1
- Authority
- IT
- Italy
- Prior art keywords
- high voltage
- manufacturing process
- resistor structure
- reduced dimension
- integrated resistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999TO001151A IT1311280B1 (it) | 1999-12-24 | 1999-12-24 | Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. |
| US09/746,373 US6696916B2 (en) | 1999-12-24 | 2000-12-22 | Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999TO001151A IT1311280B1 (it) | 1999-12-24 | 1999-12-24 | Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITTO991151A0 ITTO991151A0 (it) | 1999-12-24 |
| ITTO991151A1 ITTO991151A1 (it) | 2001-06-25 |
| IT1311280B1 true IT1311280B1 (it) | 2002-03-12 |
Family
ID=11418334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT1999TO001151A IT1311280B1 (it) | 1999-12-24 | 1999-12-24 | Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6696916B2 (it) |
| IT (1) | IT1311280B1 (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1311309B1 (it) * | 1999-12-10 | 2002-03-12 | St Microelectronics Srl | Resistore verticale integrato ad alta tensione e relativo processo difabbricazione. |
| JP2002134692A (ja) | 2000-10-20 | 2002-05-10 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP4744103B2 (ja) * | 2004-06-28 | 2011-08-10 | 富士通セミコンダクター株式会社 | 抵抗素子を含む半導体装置及びその製造方法 |
| US8717015B2 (en) * | 2010-02-12 | 2014-05-06 | Robert Bosch Gmbh | Linear-with-magnetic field magnetoresistance device |
| US20140159180A1 (en) * | 2012-12-06 | 2014-06-12 | Agency For Science, Technology And Research | Semiconductor resistor structure and semiconductor photomultiplier device |
| US10431357B2 (en) * | 2017-11-13 | 2019-10-01 | Texas Instruments Incorporated | Vertically-constructed, temperature-sensing resistors and methods of making the same |
| US20200194581A1 (en) * | 2018-12-18 | 2020-06-18 | Vanguard International Semiconductor Corporation | Semiconductor device and method for forming the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886001A (en) * | 1974-05-02 | 1975-05-27 | Nat Semiconductor Corp | Method of fabricating a vertical channel FET resistor |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| JPS63244765A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | 拡散抵抗を有する集積回路 |
| US4933739A (en) * | 1988-04-26 | 1990-06-12 | Eliyahou Harari | Trench resistor structures for compact semiconductor memory and logic devices |
| US5591655A (en) * | 1995-02-28 | 1997-01-07 | Sgs-Thomson Microelectronics, Inc. | Process for manufacturing a vertical switched-emitter structure with improved lateral isolation |
| KR100331296B1 (ko) * | 1995-12-20 | 2002-06-20 | 클라크 3세 존 엠. | 에피택셜 핀치 저항기 및 그 형성 방법 |
| US5880513A (en) * | 1996-04-18 | 1999-03-09 | Harris Corporation | Asymmetric snubber resistor |
| US5945699A (en) * | 1997-05-13 | 1999-08-31 | Harris Corporation | Reduce width, differentially doped vertical JFET device |
-
1999
- 1999-12-24 IT IT1999TO001151A patent/IT1311280B1/it active
-
2000
- 2000-12-22 US US09/746,373 patent/US6696916B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6696916B2 (en) | 2004-02-24 |
| ITTO991151A1 (it) | 2001-06-25 |
| ITTO991151A0 (it) | 1999-12-24 |
| US20020057187A1 (en) | 2002-05-16 |
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