ITTO991086A0 - Resistore verticale integrato ad alta tensione e relativo processo di fabbricazione. - Google Patents
Resistore verticale integrato ad alta tensione e relativo processo di fabbricazione.Info
- Publication number
- ITTO991086A0 ITTO991086A0 IT99TO001086A ITTO991086A ITTO991086A0 IT TO991086 A0 ITTO991086 A0 IT TO991086A0 IT 99TO001086 A IT99TO001086 A IT 99TO001086A IT TO991086 A ITTO991086 A IT TO991086A IT TO991086 A0 ITTO991086 A0 IT TO991086A0
- Authority
- IT
- Italy
- Prior art keywords
- high voltage
- manufacturing process
- voltage integrated
- integrated vertical
- vertical resistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999TO001086A IT1311309B1 (it) | 1999-12-10 | 1999-12-10 | Resistore verticale integrato ad alta tensione e relativo processo difabbricazione. |
| US09/733,781 US20010013634A1 (en) | 1999-12-10 | 2000-12-07 | High-voltage integrated vertical resistor and manufacturing process thereof |
| US10/756,203 US7053463B2 (en) | 1999-12-10 | 2004-01-12 | High-voltage integrated vertical resistor and manufacturing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999TO001086A IT1311309B1 (it) | 1999-12-10 | 1999-12-10 | Resistore verticale integrato ad alta tensione e relativo processo difabbricazione. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITTO991086A0 true ITTO991086A0 (it) | 1999-12-10 |
| ITTO991086A1 ITTO991086A1 (it) | 2001-06-10 |
| IT1311309B1 IT1311309B1 (it) | 2002-03-12 |
Family
ID=11418286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT1999TO001086A IT1311309B1 (it) | 1999-12-10 | 1999-12-10 | Resistore verticale integrato ad alta tensione e relativo processo difabbricazione. |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20010013634A1 (it) |
| IT (1) | IT1311309B1 (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4807768B2 (ja) * | 2004-06-23 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | パワートランジスタ装置及びそれを用いたパワー制御システム |
| US9214457B2 (en) * | 2011-09-20 | 2015-12-15 | Alpha & Omega Semiconductor Incorporated | Method of integrating high voltage devices |
| US8669611B2 (en) | 2012-07-11 | 2014-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for power MOS transistor |
| US9130060B2 (en) | 2012-07-11 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having a vertical power MOS transistor |
| EP3324442A1 (en) | 2016-11-21 | 2018-05-23 | Nexperia B.V. | Vertical bipolar transistor with integrated collector resistor |
| US11189701B1 (en) | 2020-12-11 | 2021-11-30 | International Business Machines Corporation | Bipolar junction transistor with vertically integrated resistor |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3982263A (en) * | 1974-05-02 | 1976-09-21 | National Semiconductor Corporation | Integrated circuit device comprising vertical channel FET resistor |
| JPS61232657A (ja) | 1985-04-09 | 1986-10-16 | Fujitsu Ltd | 静電破壊防止素子 |
| US4933739A (en) * | 1988-04-26 | 1990-06-12 | Eliyahou Harari | Trench resistor structures for compact semiconductor memory and logic devices |
| US4896243A (en) * | 1988-12-20 | 1990-01-23 | Texas Instruments Incorporated | Efficient ESD input protection scheme |
| JPH0513714A (ja) * | 1990-01-25 | 1993-01-22 | Texas Instr Inc <Ti> | 溝型トランジスタ使用の双安定論理デバイス |
| JPH04112565A (ja) * | 1990-08-31 | 1992-04-14 | Nec Corp | 半導体抵抗素子及びその製造方法 |
| US5229310A (en) * | 1991-05-03 | 1993-07-20 | Motorola, Inc. | Method for making a self-aligned vertical thin-film transistor in a semiconductor device |
| IT1252102B (it) * | 1991-11-26 | 1995-06-02 | Cons Ric Microelettronica | Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast |
| JPH06342878A (ja) | 1993-04-06 | 1994-12-13 | Fuji Electric Co Ltd | 半導体装置 |
| US5373183A (en) * | 1993-04-28 | 1994-12-13 | Harris Corporation | Integrated circuit with improved reverse bias breakdown |
| JP3334290B2 (ja) * | 1993-11-12 | 2002-10-15 | 株式会社デンソー | 半導体装置 |
| EP0810503B1 (en) * | 1996-05-14 | 2001-12-19 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers |
| JPH09331072A (ja) * | 1996-06-12 | 1997-12-22 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6030898A (en) * | 1997-12-19 | 2000-02-29 | Advanced Micro Devices, Inc. | Advanced etching method for VLSI fabrication |
| US6373100B1 (en) * | 1998-03-04 | 2002-04-16 | Semiconductor Components Industries Llc | Semiconductor device and method for fabricating the same |
| IT1311280B1 (it) * | 1999-12-24 | 2002-03-12 | St Microelectronics Srl | Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. |
-
1999
- 1999-12-10 IT IT1999TO001086A patent/IT1311309B1/it active
-
2000
- 2000-12-07 US US09/733,781 patent/US20010013634A1/en not_active Abandoned
-
2004
- 2004-01-12 US US10/756,203 patent/US7053463B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| ITTO991086A1 (it) | 2001-06-10 |
| US20040183158A1 (en) | 2004-09-23 |
| US7053463B2 (en) | 2006-05-30 |
| US20010013634A1 (en) | 2001-08-16 |
| IT1311309B1 (it) | 2002-03-12 |
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