IT1285221B1 - Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente - Google Patents
Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di correnteInfo
- Publication number
- IT1285221B1 IT1285221B1 IT96MI001965A ITMI961965A IT1285221B1 IT 1285221 B1 IT1285221 B1 IT 1285221B1 IT 96MI001965 A IT96MI001965 A IT 96MI001965A IT MI961965 A ITMI961965 A IT MI961965A IT 1285221 B1 IT1285221 B1 IT 1285221B1
- Authority
- IT
- Italy
- Prior art keywords
- high density
- current capacity
- base resistance
- thyristor structure
- controlled thyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/533,768 US5793066A (en) | 1995-09-26 | 1995-09-26 | Base resistance controlled thyristor structure with high-density layout for increased current capacity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITMI961965A1 ITMI961965A1 (it) | 1998-03-25 |
| IT1285221B1 true IT1285221B1 (it) | 1998-06-03 |
Family
ID=24127372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT96MI001965A IT1285221B1 (it) | 1995-09-26 | 1996-09-25 | Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5793066A (it) |
| JP (1) | JPH09116134A (it) |
| DE (1) | DE19638381A1 (it) |
| FR (1) | FR2739224A1 (it) |
| GB (1) | GB2305777A (it) |
| IT (1) | IT1285221B1 (it) |
| SG (1) | SG47177A1 (it) |
| TW (1) | TW318964B (it) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271061B1 (en) | 1997-12-03 | 2001-08-07 | Stmicroelectronics S.R.L. | Fabrication of insulated gate bipolar devices |
| US7327541B1 (en) | 1998-06-19 | 2008-02-05 | National Semiconductor Corporation | Operation of dual-directional electrostatic discharge protection device |
| US6365924B1 (en) * | 1998-06-19 | 2002-04-02 | National Semiconductor Corporation | Dual direction over-voltage and over-current IC protection device and its cell structure |
| US6859074B2 (en) * | 2001-01-09 | 2005-02-22 | Broadcom Corporation | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off |
| US7138836B2 (en) * | 2001-12-03 | 2006-11-21 | Broadcom Corporation | Hot carrier injection suppression circuit |
| JP4176564B2 (ja) * | 2003-06-23 | 2008-11-05 | 株式会社東芝 | ウェハ移載装置及びこれを用いた半導体装置の製造方法 |
| KR100709396B1 (ko) * | 2005-02-14 | 2007-04-18 | 주식회사 케이이씨 | 전력용 반도체 소자 |
| US8693148B2 (en) | 2009-01-08 | 2014-04-08 | Micron Technology, Inc. | Over-limit electrical condition protection circuits for integrated circuits |
| FR2974685A1 (fr) * | 2011-04-27 | 2012-11-02 | St Microelectronics Sa | Dispositif semi-conducteur de protection contres des décharges électrostatiques, en particulier du type modèle composant charge (cdm) |
| US8611058B2 (en) | 2011-08-23 | 2013-12-17 | Micron Technology, Inc. | Combination ESD protection circuits and methods |
| US8724268B2 (en) | 2011-08-30 | 2014-05-13 | Micron Technology, Inc. | Over-limit electrical condition protection circuits and methods |
| EP2761661B1 (en) * | 2011-09-29 | 2021-04-28 | Pakal Technologies, Inc. | Mct device with base-width-determined latching and non-latching states |
| CN107564959B (zh) * | 2017-08-30 | 2020-10-27 | 电子科技大学 | 一种mos栅控晶闸管及其制作方法 |
| CN108054207A (zh) * | 2017-12-11 | 2018-05-18 | 电子科技大学 | 一种双沟道mos栅控晶闸管及其制造方法 |
| CN113437135B (zh) * | 2021-06-25 | 2022-04-08 | 电子科技大学 | 一种压控型发射极关断晶闸管器件及其制造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936832B2 (ja) * | 1978-03-14 | 1984-09-06 | 株式会社日立製作所 | 半導体スイッチング素子 |
| EP0331892B1 (de) * | 1988-03-10 | 1992-04-01 | Asea Brown Boveri Ag | Mos-gesteuerter Thyristor (MCT) |
| JPH04284669A (ja) * | 1991-03-14 | 1992-10-09 | Fuji Electric Co Ltd | 絶縁ゲート制御サイリスタ |
| US5198687A (en) * | 1992-07-23 | 1993-03-30 | Baliga Bantval J | Base resistance controlled thyristor with single-polarity turn-on and turn-off control |
| JPH06204463A (ja) * | 1993-01-04 | 1994-07-22 | Toyota Autom Loom Works Ltd | 半導体装置 |
| US5444272A (en) * | 1994-07-28 | 1995-08-22 | International Rectifier Corporation | Three-terminal thyristor with single MOS-gate controlled characteristics |
-
1995
- 1995-09-26 US US08/533,768 patent/US5793066A/en not_active Expired - Fee Related
-
1996
- 1996-09-18 GB GB9619451A patent/GB2305777A/en not_active Withdrawn
- 1996-09-19 DE DE19638381A patent/DE19638381A1/de not_active Withdrawn
- 1996-09-20 SG SG1996010650A patent/SG47177A1/en unknown
- 1996-09-24 TW TW085111659A patent/TW318964B/zh active
- 1996-09-25 IT IT96MI001965A patent/IT1285221B1/it active IP Right Grant
- 1996-09-26 FR FR9611722A patent/FR2739224A1/fr not_active Withdrawn
- 1996-09-26 JP JP8254683A patent/JPH09116134A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI961965A1 (it) | 1998-03-25 |
| TW318964B (it) | 1997-11-01 |
| SG47177A1 (en) | 1998-03-20 |
| US5793066A (en) | 1998-08-11 |
| JPH09116134A (ja) | 1997-05-02 |
| FR2739224A1 (fr) | 1997-03-28 |
| DE19638381A1 (de) | 1997-06-12 |
| GB2305777A (en) | 1997-04-16 |
| GB9619451D0 (en) | 1996-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |