IT1285221B1 - Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente - Google Patents

Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente

Info

Publication number
IT1285221B1
IT1285221B1 IT96MI001965A ITMI961965A IT1285221B1 IT 1285221 B1 IT1285221 B1 IT 1285221B1 IT 96MI001965 A IT96MI001965 A IT 96MI001965A IT MI961965 A ITMI961965 A IT MI961965A IT 1285221 B1 IT1285221 B1 IT 1285221B1
Authority
IT
Italy
Prior art keywords
high density
current capacity
base resistance
thyristor structure
controlled thyristor
Prior art date
Application number
IT96MI001965A
Other languages
English (en)
Inventor
S Ajit Janardhanan
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI961965A1 publication Critical patent/ITMI961965A1/it
Application granted granted Critical
Publication of IT1285221B1 publication Critical patent/IT1285221B1/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012Base regions of thyristors
    • H01L29/102Cathode base regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices
    • H01L29/745Gate-turn-off devices with turn-off by field effect
    • H01L29/7455Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
IT96MI001965A 1995-09-26 1996-09-25 Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente IT1285221B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/533,768 US5793066A (en) 1995-09-26 1995-09-26 Base resistance controlled thyristor structure with high-density layout for increased current capacity

Publications (2)

Publication Number Publication Date
ITMI961965A1 ITMI961965A1 (it) 1998-03-25
IT1285221B1 true IT1285221B1 (it) 1998-06-03

Family

ID=24127372

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI001965A IT1285221B1 (it) 1995-09-26 1996-09-25 Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente

Country Status (8)

Country Link
US (1) US5793066A (it)
JP (1) JPH09116134A (it)
DE (1) DE19638381A1 (it)
FR (1) FR2739224A1 (it)
GB (1) GB2305777A (it)
IT (1) IT1285221B1 (it)
SG (1) SG47177A1 (it)
TW (1) TW318964B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271061B1 (en) 1997-12-03 2001-08-07 Stmicroelectronics S.R.L. Fabrication of insulated gate bipolar devices
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6365924B1 (en) * 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
US6859074B2 (en) * 2001-01-09 2005-02-22 Broadcom Corporation I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off
US7138836B2 (en) * 2001-12-03 2006-11-21 Broadcom Corporation Hot carrier injection suppression circuit
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
KR100709396B1 (ko) * 2005-02-14 2007-04-18 주식회사 케이이씨 전력용 반도체 소자
US8693148B2 (en) 2009-01-08 2014-04-08 Micron Technology, Inc. Over-limit electrical condition protection circuits for integrated circuits
FR2974685A1 (fr) * 2011-04-27 2012-11-02 St Microelectronics Sa Dispositif semi-conducteur de protection contres des décharges électrostatiques, en particulier du type modèle composant charge (cdm)
US8611058B2 (en) 2011-08-23 2013-12-17 Micron Technology, Inc. Combination ESD protection circuits and methods
US8724268B2 (en) 2011-08-30 2014-05-13 Micron Technology, Inc. Over-limit electrical condition protection circuits and methods
EP2761661B1 (en) * 2011-09-29 2021-04-28 Pakal Technologies, Inc. Mct device with base-width-determined latching and non-latching states
CN107564959B (zh) * 2017-08-30 2020-10-27 电子科技大学 一种mos栅控晶闸管及其制作方法
CN108054207A (zh) * 2017-12-11 2018-05-18 电子科技大学 一种双沟道mos栅控晶闸管及其制造方法
CN113437135B (zh) * 2021-06-25 2022-04-08 电子科技大学 一种压控型发射极关断晶闸管器件及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
EP0331892B1 (de) * 1988-03-10 1992-04-01 Asea Brown Boveri Ag Mos-gesteuerter Thyristor (MCT)
JPH04284669A (ja) * 1991-03-14 1992-10-09 Fuji Electric Co Ltd 絶縁ゲート制御サイリスタ
US5198687A (en) * 1992-07-23 1993-03-30 Baliga Bantval J Base resistance controlled thyristor with single-polarity turn-on and turn-off control
JPH06204463A (ja) * 1993-01-04 1994-07-22 Toyota Autom Loom Works Ltd 半導体装置
US5444272A (en) * 1994-07-28 1995-08-22 International Rectifier Corporation Three-terminal thyristor with single MOS-gate controlled characteristics

Also Published As

Publication number Publication date
ITMI961965A1 (it) 1998-03-25
TW318964B (it) 1997-11-01
SG47177A1 (en) 1998-03-20
US5793066A (en) 1998-08-11
JPH09116134A (ja) 1997-05-02
FR2739224A1 (fr) 1997-03-28
DE19638381A1 (de) 1997-06-12
GB2305777A (en) 1997-04-16
GB9619451D0 (en) 1996-10-30

Similar Documents

Publication Publication Date Title
IT1285221B1 (it) Struttura di tiristore controllato da resistenza di base con disposizione ad alta densita' per una capacita' di corrente
DE69520229D1 (de) ATM-VERMITTLUNGSSTELLE mit höher Kapazität
DE69636317D1 (de) Photovoltaische Hochspannungsanlage mit individuellen Speichermitteln
DE69603864D1 (de) Bürstenhalter mit neuen bürstenhalterungen
FR2769144B1 (fr) Accumulateur d'electricite
ITMI950538V0 (it) Seggiolone con meccanismo perfezionato di reclinamento
DE69609336D1 (de) Nahfeld-leitfähigkeits-mikroskop
IT8921096A0 (it) Accumulatore elettrico ad elevata densita' di potenza per carichi di punta.
IT8748001A0 (it) Resistore ad alta densita' di energia, basso effetto corona
DE59505371D1 (de) Hochspannungskippdiode
ITTO930357A0 (it) Composto polimerico conduttivo ad alta densita' di attivazione elettrica e suo metodo di preparazione.
DK0600893T3 (da) Genekspression i Bacilli
ITMI921244A0 (it) Copolimeri fluoroelastometrici e fluoroplastomerici dotati di elevata resistenza alle basi
DE69427376D1 (de) Antistatisches mikroskop
DE59309376D1 (de) Elektrische Widerstandsschicht
IT1283739B1 (it) Struttura di supporto per supportare un'apparecchiatura elettrica su un basamento
IT1213095B (it) Specchio di corrente ad alta capacita'.!
ITMI950090A0 (it) Modulo di portata nominale in unita' limitatrice di corrente
DE69531287D1 (de) Verbesserte speicheranordnungen
FR2743316B1 (fr) Plaque support d'emporte-pieces
ITMI922024A1 (it) Generatore di corrente di riferimento
KR950032775U (ko) 아암레스트 겸용 물건 보관장치
KR960026594U (ko) 선반의 받침판 구조
FR2752703B1 (fr) Fauteuil trigone
BR7602030U (pt) Porta CD's

Legal Events

Date Code Title Description
0001 Granted