IT1164353B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1164353B
IT1164353B IT22373/83A IT2237383A IT1164353B IT 1164353 B IT1164353 B IT 1164353B IT 22373/83 A IT22373/83 A IT 22373/83A IT 2237383 A IT2237383 A IT 2237383A IT 1164353 B IT1164353 B IT 1164353B
Authority
IT
Italy
Prior art keywords
semiconductive device
semiconductive
Prior art date
Application number
IT22373/83A
Other languages
English (en)
Italian (it)
Other versions
IT8322373A0 (it
IT8322373A1 (it
Inventor
Sugino Eitaro
Morikuri Akira
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of IT8322373A0 publication Critical patent/IT8322373A0/it
Publication of IT8322373A1 publication Critical patent/IT8322373A1/it
Application granted granted Critical
Publication of IT1164353B publication Critical patent/IT1164353B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10W10/0127—
    • H10W10/13—
    • H10W72/019—
    • H10W70/60—
    • H10W72/923—
    • H10W72/952—
    • H10W72/983—
IT22373/83A 1982-08-09 1983-08-02 Dispositivo semiconduttore IT1164353B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57138210A JPS5928370A (ja) 1982-08-09 1982-08-09 半導体装置

Publications (3)

Publication Number Publication Date
IT8322373A0 IT8322373A0 (it) 1983-08-02
IT8322373A1 IT8322373A1 (it) 1985-02-02
IT1164353B true IT1164353B (it) 1987-04-08

Family

ID=15216651

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22373/83A IT1164353B (it) 1982-08-09 1983-08-02 Dispositivo semiconduttore

Country Status (3)

Country Link
US (1) US4730208A (enExample)
JP (1) JPS5928370A (enExample)
IT (1) IT1164353B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811072A (en) * 1982-09-24 1989-03-07 Risberg Robert L Semiconductor device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
DE3586268T2 (de) * 1984-05-03 1993-02-25 Digital Equipment Corp Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen.
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
JPH01262654A (ja) * 1988-04-14 1989-10-19 Toshiba Corp 半導体装置
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
JPH0817203B2 (ja) * 1989-08-18 1996-02-21 三菱電機株式会社 半導体装置およびその製造方法
US5172211A (en) * 1990-01-12 1992-12-15 Paradigm Technology, Inc. High resistance polysilicon load resistor
JPH03238868A (ja) * 1990-02-15 1991-10-24 Nec Corp 縦型電界効果トランジスタ
JPH05121664A (ja) * 1991-10-25 1993-05-18 Nec Corp 半導体装置
US5332913A (en) * 1991-12-17 1994-07-26 Intel Corporation Buried interconnect structure for semiconductor devices
US5401997A (en) * 1992-01-22 1995-03-28 Integrated Device Technology, Inc. ESD protection for poly resistor on oxide
SE9900439D0 (sv) 1999-02-09 1999-02-09 Ericsson Telefon Ab L M Electrostatic discharge protection of integrated circuits
SE522909C2 (sv) * 2001-09-06 2004-03-16 Ericsson Telefon Ab L M Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor
SE0302296D0 (sv) * 2003-08-27 2003-08-27 Infineon Technologies Ag Device for ESD protection of an integrated circuit
EP1603162A1 (en) * 2004-05-28 2005-12-07 Infineon Technologies AG Device for esd protection of an integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122794B1 (enExample) * 1970-06-24 1976-07-12
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
JPS5552253A (en) * 1978-10-11 1980-04-16 Nec Corp Semiconductor device
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material

Also Published As

Publication number Publication date
IT8322373A0 (it) 1983-08-02
IT8322373A1 (it) 1985-02-02
JPH0463546B2 (enExample) 1992-10-12
US4730208A (en) 1988-03-08
JPS5928370A (ja) 1984-02-15

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970829