IT1158954B - Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio - Google Patents
Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicioInfo
- Publication number
- IT1158954B IT1158954B IT26099/78A IT2609978A IT1158954B IT 1158954 B IT1158954 B IT 1158954B IT 26099/78 A IT26099/78 A IT 26099/78A IT 2609978 A IT2609978 A IT 2609978A IT 1158954 B IT1158954 B IT 1158954B
- Authority
- IT
- Italy
- Prior art keywords
- tantalium
- contact
- manufacturing process
- semiconductive substrate
- silicon semiconductive
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/827,912 US4215156A (en) | 1977-08-26 | 1977-08-26 | Method for fabricating tantalum semiconductor contacts |
Publications (2)
Publication Number | Publication Date |
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IT7826099A0 IT7826099A0 (it) | 1978-07-26 |
IT1158954B true IT1158954B (it) | 1987-02-25 |
Family
ID=25250468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26099/78A IT1158954B (it) | 1977-08-26 | 1978-07-26 | Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio |
Country Status (6)
Country | Link |
---|---|
US (1) | US4215156A (it) |
EP (1) | EP0000743B1 (it) |
JP (1) | JPS5932069B2 (it) |
CA (1) | CA1111570A (it) |
DE (1) | DE2860169D1 (it) |
IT (1) | IT1158954B (it) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4307132A (en) * | 1977-12-27 | 1981-12-22 | International Business Machines Corp. | Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer |
JPS55132068A (en) * | 1979-03-30 | 1980-10-14 | Ibm | Pnp bipolar transistor |
US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
CA1138795A (en) * | 1980-02-19 | 1983-01-04 | Goodrich (B.F.) Company (The) | Escape slide and life raft |
US4379832A (en) * | 1981-08-31 | 1983-04-12 | International Business Machines Corporation | Method for making low barrier Schottky devices of the electron beam evaporation of reactive metals |
DE3230050A1 (de) * | 1982-08-12 | 1984-02-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit bipolaren bauelementen und verfahren zur herstellung derselben |
JPS59175763A (ja) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | 半導体装置 |
JPS6113779U (ja) * | 1984-06-29 | 1986-01-27 | 有限会社 東京巧作所 | 扉開閉用マグネツトキヤツチヤ− |
JPS6143360U (ja) * | 1984-08-24 | 1986-03-20 | 有限会社 東京巧作所 | 扉開閉用マグネツトキヤツチヤ− |
JPH0315737Y2 (it) * | 1984-10-30 | 1991-04-05 | ||
JPS6116568A (ja) * | 1984-07-03 | 1986-01-24 | Matsushita Electronics Corp | シヨツトキ障壁形半導体装置 |
DE3664702D1 (en) * | 1985-03-13 | 1989-08-31 | Siemens Ag | Thin-film layer structure with a reactive intermediate layer for integrated circuits |
US4849260A (en) * | 1986-06-30 | 1989-07-18 | Nihon Sinku Gijutsu Kabushiki Kaisha | Method for selectively depositing metal on a substrate |
US4994301A (en) * | 1986-06-30 | 1991-02-19 | Nihon Sinku Gijutsu Kabusiki Kaisha | ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate |
JP2620240B2 (ja) * | 1987-06-10 | 1997-06-11 | 株式会社日立製作所 | 液晶表示装置 |
US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
US5116464A (en) * | 1989-06-02 | 1992-05-26 | Massachusetts Institute Of Technology | Cesium hydroxide etch of a semiconductor crystal |
US6183685B1 (en) | 1990-06-26 | 2001-02-06 | Littlefuse Inc. | Varistor manufacturing method |
US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
US5221638A (en) * | 1991-09-10 | 1993-06-22 | Sanken Electric Co., Ltd. | Method of manufacturing a Schottky barrier semiconductor device |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US6326601B1 (en) * | 1999-07-19 | 2001-12-04 | Agilent Technologies, Inc. | Optical barrier |
US7554829B2 (en) | 1999-07-30 | 2009-06-30 | Micron Technology, Inc. | Transmission lines for CMOS integrated circuits |
DE10011886A1 (de) * | 2000-03-07 | 2001-09-20 | Infineon Technologies Ag | Verfahren zur Herstellung einer Leiterstruktur für einen integrierten Schaltkreis |
US6271068B1 (en) * | 2001-01-08 | 2001-08-07 | Taiwan Semiconductor Manufacturing Company | Method for making improved polysilicon emitters for bipolar transistors on BiCMOS integrated circuits |
US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US6844203B2 (en) | 2001-08-30 | 2005-01-18 | Micron Technology, Inc. | Gate oxides, and methods of forming |
US8026161B2 (en) | 2001-08-30 | 2011-09-27 | Micron Technology, Inc. | Highly reliable amorphous high-K gate oxide ZrO2 |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6900122B2 (en) * | 2001-12-20 | 2005-05-31 | Micron Technology, Inc. | Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics |
US6767795B2 (en) * | 2002-01-17 | 2004-07-27 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOXNY |
US6812100B2 (en) | 2002-03-13 | 2004-11-02 | Micron Technology, Inc. | Evaporation of Y-Si-O films for medium-k dielectrics |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
US7205218B2 (en) * | 2002-06-05 | 2007-04-17 | Micron Technology, Inc. | Method including forming gate dielectrics having multiple lanthanide oxide layers |
US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7221017B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US6921702B2 (en) | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
US6884739B2 (en) * | 2002-08-15 | 2005-04-26 | Micron Technology Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
US6790791B2 (en) | 2002-08-15 | 2004-09-14 | Micron Technology, Inc. | Lanthanide doped TiOx dielectric films |
US20040036129A1 (en) * | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US6967154B2 (en) | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
US7199023B2 (en) * | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
US6958302B2 (en) | 2002-12-04 | 2005-10-25 | Micron Technology, Inc. | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 |
US7101813B2 (en) | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
US7192892B2 (en) | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
US7220665B2 (en) * | 2003-08-05 | 2007-05-22 | Micron Technology, Inc. | H2 plasma treatment |
US6955932B2 (en) * | 2003-10-29 | 2005-10-18 | International Business Machines Corporation | Single and double-gate pseudo-FET devices for semiconductor materials evaluation |
US20050233477A1 (en) * | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
US7498247B2 (en) * | 2005-02-23 | 2009-03-03 | Micron Technology, Inc. | Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics |
US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US20070013014A1 (en) * | 2005-05-03 | 2007-01-18 | Shuwen Guo | High temperature resistant solid state pressure sensor |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
US7400042B2 (en) * | 2005-05-03 | 2008-07-15 | Rosemount Aerospace Inc. | Substrate with adhesive bonding metallization with diffusion barrier |
US7628309B1 (en) | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
WO2007056183A1 (en) * | 2005-11-02 | 2007-05-18 | Second Sight Medical Products, Inc. | Implantable microelectronic device and method of manufacture |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442012A (en) * | 1967-08-03 | 1969-05-06 | Teledyne Inc | Method of forming a flip-chip integrated circuit |
US3567508A (en) * | 1968-10-31 | 1971-03-02 | Gen Electric | Low temperature-high vacuum contact formation process |
US3820236A (en) * | 1969-06-20 | 1974-06-28 | Texas Instruments Inc | Method of making metal semiconductor diodes having plated heat sink members |
US3662458A (en) * | 1969-06-20 | 1972-05-16 | Westinghouse Electric Corp | Electrical contact for silicon carbide members |
GB1290926A (it) * | 1969-06-20 | 1972-09-27 | ||
US3663279A (en) * | 1969-11-19 | 1972-05-16 | Bell Telephone Labor Inc | Passivated semiconductor devices |
US3641402A (en) * | 1969-12-30 | 1972-02-08 | Ibm | Semiconductor device with beta tantalum-gold composite conductor metallurgy |
US3967371A (en) * | 1970-01-06 | 1976-07-06 | Sescosem- Societe Europeenne Des Semi-Conducteurs Et De Microelectronique | Methods of manufacturing multilayer interconnections for integrated circuits and to integrated circuits utilizing said method |
US3652905A (en) * | 1970-05-26 | 1972-03-28 | Westinghouse Electric Corp | Schottky barrier power rectifier |
DE2057204C3 (de) * | 1970-11-20 | 1975-02-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Metall-Halbleiterkontakten |
US3939047A (en) * | 1971-11-15 | 1976-02-17 | Nippon Electric Co., Ltd. | Method for fabricating electrode structure for a semiconductor device having a shallow junction |
JPS557020B2 (it) * | 1971-11-15 | 1980-02-21 | ||
NL163370C (nl) * | 1972-04-28 | 1980-08-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon. |
US3906540A (en) * | 1973-04-02 | 1975-09-16 | Nat Semiconductor Corp | Metal-silicide Schottky diode employing an aluminum connector |
US3923975A (en) * | 1973-10-09 | 1975-12-02 | Cutler Hammer Inc | Tantalum-gallium arsenide schottky barrier semiconductor device |
US3900944A (en) * | 1973-12-19 | 1975-08-26 | Texas Instruments Inc | Method of contacting and connecting semiconductor devices in integrated circuits |
US4035208A (en) * | 1974-09-03 | 1977-07-12 | Texas Instruments Incorporated | Method of patterning Cr-Pt-Au metallization for silicon devices |
JPS5136878A (en) * | 1974-09-14 | 1976-03-27 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
NL7510586A (nl) * | 1975-09-09 | 1977-03-11 | Philips Nv | Werkwijze voor het vervaardigen van een la- dingsoverdrachtinrichting en ladingsoverdracht- inrichting vervaardigd met behulp van de werk- wijze. |
-
1977
- 1977-08-26 US US05/827,912 patent/US4215156A/en not_active Expired - Lifetime
-
1978
- 1978-07-12 JP JP53084103A patent/JPS5932069B2/ja not_active Expired
- 1978-07-18 CA CA307,591A patent/CA1111570A/en not_active Expired
- 1978-07-26 IT IT26099/78A patent/IT1158954B/it active
- 1978-07-27 EP EP78100525A patent/EP0000743B1/de not_active Expired
- 1978-07-27 DE DE7878100525T patent/DE2860169D1/de not_active Expired
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EP0000743A1 (de) | 1979-02-21 |
IT7826099A0 (it) | 1978-07-26 |
EP0000743B1 (de) | 1980-09-17 |
US4215156A (en) | 1980-07-29 |
DE2860169D1 (en) | 1980-12-18 |
CA1111570A (en) | 1981-10-27 |
JPS5932069B2 (ja) | 1984-08-06 |
JPS5436178A (en) | 1979-03-16 |
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