IT1158954B - Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio - Google Patents

Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio

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Publication number
IT1158954B
IT1158954B IT26099/78A IT2609978A IT1158954B IT 1158954 B IT1158954 B IT 1158954B IT 26099/78 A IT26099/78 A IT 26099/78A IT 2609978 A IT2609978 A IT 2609978A IT 1158954 B IT1158954 B IT 1158954B
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IT
Italy
Prior art keywords
tantalium
contact
manufacturing process
semiconductive substrate
silicon semiconductive
Prior art date
Application number
IT26099/78A
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English (en)
Other versions
IT7826099A0 (it
Original Assignee
Ibm
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Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7826099A0 publication Critical patent/IT7826099A0/it
Application granted granted Critical
Publication of IT1158954B publication Critical patent/IT1158954B/it

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    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
IT26099/78A 1977-08-26 1978-07-26 Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio IT1158954B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/827,912 US4215156A (en) 1977-08-26 1977-08-26 Method for fabricating tantalum semiconductor contacts

Publications (2)

Publication Number Publication Date
IT7826099A0 IT7826099A0 (it) 1978-07-26
IT1158954B true IT1158954B (it) 1987-02-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
IT26099/78A IT1158954B (it) 1977-08-26 1978-07-26 Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio

Country Status (6)

Country Link
US (1) US4215156A (it)
EP (1) EP0000743B1 (it)
JP (1) JPS5932069B2 (it)
CA (1) CA1111570A (it)
DE (1) DE2860169D1 (it)
IT (1) IT1158954B (it)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
CA1138795A (en) * 1980-02-19 1983-01-04 Goodrich (B.F.) Company (The) Escape slide and life raft
US4379832A (en) * 1981-08-31 1983-04-12 International Business Machines Corporation Method for making low barrier Schottky devices of the electron beam evaporation of reactive metals
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IT7826099A0 (it) 1978-07-26
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US4215156A (en) 1980-07-29
DE2860169D1 (en) 1980-12-18
CA1111570A (en) 1981-10-27
JPS5932069B2 (ja) 1984-08-06
JPS5436178A (en) 1979-03-16

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