IT1138547B - Metodo per fare contatti a bassa resistenza in dispositivi semiconduttori - Google Patents

Metodo per fare contatti a bassa resistenza in dispositivi semiconduttori

Info

Publication number
IT1138547B
IT1138547B IT23735/81A IT2373581A IT1138547B IT 1138547 B IT1138547 B IT 1138547B IT 23735/81 A IT23735/81 A IT 23735/81A IT 2373581 A IT2373581 A IT 2373581A IT 1138547 B IT1138547 B IT 1138547B
Authority
IT
Italy
Prior art keywords
low resistance
making low
resistance contacts
semiconductive devices
semiconductive
Prior art date
Application number
IT23735/81A
Other languages
English (en)
Other versions
IT8123735A0 (it
Inventor
Franklin Reihl Robert
Wang Kang-Lung
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IT8123735A0 publication Critical patent/IT8123735A0/it
Application granted granted Critical
Publication of IT1138547B publication Critical patent/IT1138547B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
IT23735/81A 1980-09-15 1981-09-02 Metodo per fare contatti a bassa resistenza in dispositivi semiconduttori IT1138547B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/187,043 US4339869A (en) 1980-09-15 1980-09-15 Method of making low resistance contacts in semiconductor devices by ion induced silicides

Publications (2)

Publication Number Publication Date
IT8123735A0 IT8123735A0 (it) 1981-09-02
IT1138547B true IT1138547B (it) 1986-09-17

Family

ID=22687378

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23735/81A IT1138547B (it) 1980-09-15 1981-09-02 Metodo per fare contatti a bassa resistenza in dispositivi semiconduttori

Country Status (6)

Country Link
US (1) US4339869A (it)
JP (1) JPS5780721A (it)
DE (1) DE3135993A1 (it)
FR (1) FR2513011A1 (it)
GB (1) GB2083949A (it)
IT (1) IT1138547B (it)

Families Citing this family (39)

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Publication number Priority date Publication date Assignee Title
US4551908A (en) * 1981-06-15 1985-11-12 Nippon Electric Co., Ltd. Process of forming electrodes and interconnections on silicon semiconductor devices
US4378628A (en) * 1981-08-27 1983-04-05 Bell Telephone Laboratories, Incorporated Cobalt silicide metallization for semiconductor integrated circuits
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
US4503451A (en) * 1982-07-30 1985-03-05 Motorola, Inc. Low resistance buried power bus for integrated circuits
US4558507A (en) * 1982-11-12 1985-12-17 Nec Corporation Method of manufacturing semiconductor device
US4521952A (en) * 1982-12-02 1985-06-11 International Business Machines Corporation Method of making integrated circuits using metal silicide contacts
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning
DE3304588A1 (de) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mos-transistoren mit flachen source/drain-gebieten, kurzen kanallaengen und einer selbstjustierten, aus einem metallsilizid bestehenden kontaktierungsebene
US4450620A (en) * 1983-02-18 1984-05-29 Bell Telephone Laboratories, Incorporated Fabrication of MOS integrated circuit devices
KR910006249B1 (ko) * 1983-04-01 1991-08-17 가부시기가이샤 히다찌세이사꾸쇼 반도체 장치
JPS59208772A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS59208773A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS59210642A (ja) * 1983-05-16 1984-11-29 Hitachi Ltd 半導体装置の製造方法
JPS60132353A (ja) * 1983-12-20 1985-07-15 Mitsubishi Electric Corp 半導体装置の製造方法
US4851295A (en) * 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
FR2578272B1 (fr) * 1985-03-01 1987-05-22 Centre Nat Rech Scient Procede de formation sur un substrat d'une couche de siliciure de tungstene, utilisable notamment pour la realisation de couches d'interconnexion des circuits integres.
DE3688711T2 (de) * 1985-03-07 1993-12-16 Toshiba Kawasaki Kk Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung.
JPS61274325A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0799738B2 (ja) * 1985-09-05 1995-10-25 三菱電機株式会社 半導体装置の製造方法
US4843033A (en) * 1985-09-27 1989-06-27 Texas Instruments Incorporated Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source
US4788160A (en) * 1987-03-31 1988-11-29 Texas Instruments Incorporated Process for formation of shallow silicided junctions
US5059546A (en) * 1987-05-01 1991-10-22 Texas Instruments Incorporated BICMOS process for forming shallow NPN emitters and mosfet source/drains
US4816423A (en) * 1987-05-01 1989-03-28 Texas Instruments Incorporated Bicmos process for forming shallow npn emitters and mosfet source/drains
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
US4998157A (en) * 1988-08-06 1991-03-05 Seiko Epson Corporation Ohmic contact to silicon substrate
US4908334A (en) * 1989-01-24 1990-03-13 The United States Of America As Represented By The United States Department Of Energy Method for forming metallic silicide films on silicon substrates by ion beam deposition
US5217924A (en) * 1989-05-12 1993-06-08 Texas Instruments Incorporated Method for forming shallow junctions with a low resistivity silicide layer
US5087322A (en) * 1990-10-24 1992-02-11 Cornell Research Foundation, Inc. Selective metallization for high temperature semiconductors
KR100214036B1 (ko) * 1991-02-19 1999-08-02 이데이 노부유끼 알루미늄계 배선형성방법
JP2891093B2 (ja) * 1994-02-17 1999-05-17 日本電気株式会社 半導体集積回路の製造方法
JP2614016B2 (ja) * 1994-05-31 1997-05-28 九州日本電気株式会社 半導体装置の製造方法
EP0865077A1 (en) * 1997-03-14 1998-09-16 Interuniversitair Micro-Elektronica Centrum Vzw Method for the formation of a thin metal silicide layer on a Si substrate, and use thereof in detector applications
DE19746961C2 (de) * 1997-10-24 1999-08-12 Ernst Lueder Verfahren zur Herstellung von Dünnschichttransistoren
US6303969B1 (en) * 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
DE69832162D1 (de) 1998-07-22 2005-12-08 St Microelectronics Srl Herstellungsverfahren für ein elektronisches Bauelement, das MOS Transistoren mit salizidierten Übergängen und nicht salizidierten Widerständen enthält
US6605321B1 (en) * 2000-07-20 2003-08-12 Centre National De La Recherche Scientifique (Cnrs) Method of treating materials by irradiation
US8268081B2 (en) * 2008-10-02 2012-09-18 Varian Semiconductor Equipment Associates, Inc. Platen cleaning method
US11721801B2 (en) 2020-08-17 2023-08-08 International Business Machines Corporation, Armonk Low resistance composite silicon-based electrode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030024A6 (en) * 1967-11-08 1970-10-30 Comp Generale Electricite Alloyed junction tunnel diode
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
US3964084A (en) * 1974-06-12 1976-06-15 Bell Telephone Laboratories, Incorporated Schottky barrier diode contacts
US4107835A (en) * 1977-02-11 1978-08-22 Bell Telephone Laboratories, Incorporated Fabrication of semiconductive devices
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
US4263058A (en) * 1979-06-11 1981-04-21 General Electric Company Composite conductive structures in integrated circuits and method of making same
US4283437A (en) * 1979-08-02 1981-08-11 Frito-Lay, Inc. Method for frying foods and fried food products
US4276688A (en) * 1980-01-21 1981-07-07 Rca Corporation Method for forming buried contact complementary MOS devices

Also Published As

Publication number Publication date
GB2083949A (en) 1982-03-31
DE3135993A1 (de) 1982-04-29
IT8123735A0 (it) 1981-09-02
US4339869A (en) 1982-07-20
JPS5780721A (en) 1982-05-20
FR2513011A1 (fr) 1983-03-18

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