IT1130689B - Procedimento litografico a particelle accelerate per la fabbricazione di circuiti integrati su larga scala e circuiti integrati ottenuti - Google Patents

Procedimento litografico a particelle accelerate per la fabbricazione di circuiti integrati su larga scala e circuiti integrati ottenuti

Info

Publication number
IT1130689B
IT1130689B IT22403/80A IT2240380A IT1130689B IT 1130689 B IT1130689 B IT 1130689B IT 22403/80 A IT22403/80 A IT 22403/80A IT 2240380 A IT2240380 A IT 2240380A IT 1130689 B IT1130689 B IT 1130689B
Authority
IT
Italy
Prior art keywords
integrated circuits
manufacture
accelerated particle
lithographic procedure
particle lithographic
Prior art date
Application number
IT22403/80A
Other languages
English (en)
Italian (it)
Other versions
IT8022403A0 (it
Inventor
Thomas Maxwell Hall
Alfred Wagner
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8022403A0 publication Critical patent/IT8022403A0/it
Application granted granted Critical
Publication of IT1130689B publication Critical patent/IT1130689B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0279—Ionlithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2065—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam using corpuscular radiation other than electron beams

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
IT22403/80A 1979-05-31 1980-05-29 Procedimento litografico a particelle accelerate per la fabbricazione di circuiti integrati su larga scala e circuiti integrati ottenuti IT1130689B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4407379A 1979-05-31 1979-05-31

Publications (2)

Publication Number Publication Date
IT8022403A0 IT8022403A0 (it) 1980-05-29
IT1130689B true IT1130689B (it) 1986-06-18

Family

ID=21930389

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22403/80A IT1130689B (it) 1979-05-31 1980-05-29 Procedimento litografico a particelle accelerate per la fabbricazione di circuiti integrati su larga scala e circuiti integrati ottenuti

Country Status (7)

Country Link
EP (1) EP0029061B1 (en, 2012)
JP (1) JPH0536782B2 (en, 2012)
CA (1) CA1145483A (en, 2012)
DE (1) DE3069341D1 (en, 2012)
ES (1) ES491874A0 (en, 2012)
IT (1) IT1130689B (en, 2012)
WO (1) WO1980002752A1 (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362606A (en) * 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JPH04130619A (ja) * 1990-09-20 1992-05-01 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3143423A (en) * 1962-04-02 1964-08-04 Eastman Kodak Co New photo-resist benzoylazide compositions
US3529960A (en) * 1967-01-24 1970-09-22 Hilbert Sloan Methods of treating resist coatings
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
JPS576578B2 (en, 2012) * 1973-11-05 1982-02-05
US4061799A (en) * 1973-11-05 1977-12-06 Texas Instruments Incorporated Method of patterning styrene diene block copolymer electron beam resists
JPS5738897B2 (en, 2012) * 1974-11-19 1982-08-18
JPS55149942A (en) * 1979-04-24 1980-11-21 Westinghouse Electric Corp Treatment for forming pattern on resist layer

Also Published As

Publication number Publication date
IT8022403A0 (it) 1980-05-29
DE3069341D1 (en) 1984-11-08
ES8103477A1 (es) 1981-02-16
EP0029061B1 (en) 1984-10-03
ES491874A0 (es) 1981-02-16
EP0029061A1 (en) 1981-05-27
JPH0536782B2 (en, 2012) 1993-05-31
EP0029061A4 (en) 1982-07-13
WO1980002752A1 (en) 1980-12-11
JPS56500627A (en, 2012) 1981-05-07
CA1145483A (en) 1983-04-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970526