IT1042581B - Procedimento per fabricare transistor verticali complementtari in tegrati e transistor ottenuti - Google Patents

Procedimento per fabricare transistor verticali complementtari in tegrati e transistor ottenuti

Info

Publication number
IT1042581B
IT1042581B IT27273/75A IT2727375A IT1042581B IT 1042581 B IT1042581 B IT 1042581B IT 27273/75 A IT27273/75 A IT 27273/75A IT 2727375 A IT2727375 A IT 2727375A IT 1042581 B IT1042581 B IT 1042581B
Authority
IT
Italy
Prior art keywords
transistors
tegrati
procedure
complementary vertical
manufacturing complementary
Prior art date
Application number
IT27273/75A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1042581B publication Critical patent/IT1042581B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT27273/75A 1974-09-19 1975-09-16 Procedimento per fabricare transistor verticali complementtari in tegrati e transistor ottenuti IT1042581B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (1)

Publication Number Publication Date
IT1042581B true IT1042581B (it) 1980-01-30

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27273/75A IT1042581B (it) 1974-09-19 1975-09-16 Procedimento per fabricare transistor verticali complementtari in tegrati e transistor ottenuti

Country Status (10)

Country Link
JP (1) JPS5157172A (it)
BE (1) BE833455A (it)
CA (1) CA1038968A (it)
DE (1) DE2541161A1 (it)
ES (1) ES440909A0 (it)
FR (1) FR2285717A1 (it)
GB (1) GB1525247A (it)
IT (1) IT1042581B (it)
NL (1) NL7510994A (it)
SE (1) SE403214B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (ja) * 1986-01-13 1995-02-15 三洋電機株式会社 縦型pnpトランジスタ
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors

Also Published As

Publication number Publication date
CA1038968A (en) 1978-09-19
JPS5157172A (it) 1976-05-19
BE833455A (fr) 1976-01-16
GB1525247A (en) 1978-09-20
SE7510075L (sv) 1976-03-22
NL7510994A (nl) 1976-03-23
FR2285717B1 (it) 1980-04-30
FR2285717A1 (fr) 1976-04-16
DE2541161A1 (de) 1976-04-01
SE403214B (sv) 1978-07-31
ES440909A0 (es) 1977-03-16

Similar Documents

Publication Publication Date Title
SE7510120L (sv) Felteffekttransistor
NL7513422A (nl) Transistorversterker met veldeffecttransistoren.
SU446961A3 (ru) Добавка в бетон
SE406136B (sv) Mis-felteffekttransistordon
BE781898A (fr) Support de transistor
IT1044690B (it) Dispositivo con due transistori a effetto di campo complementari
SE7514499L (sv) Formningsanordning
BE824887A (fr) Transistor bipolaire
BE824510A (fr) Circuit de transistors combines
IT979867B (it) Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali
IT1032239B (it) Perfezionamento nei circuitti mos
SE407996B (sv) Halvledaranordning med komplementera transistorer och sett att framstella densamma
BE827703A (fr) Spasmolytiques
IT1042581B (it) Procedimento per fabricare transistor verticali complementtari in tegrati e transistor ottenuti
AT376845B (de) Speicher-feldeffekttransistor
AT348589B (de) Feldeffekttransistor
BE827625A (fr) Spasmolytiques
JPS5170433A (ja) Hiraihoshiki
AT337252B (de) Transistorverstarkerschaltung
AT349066B (de) Transistorverstaerker
CH506188A (de) Feldeffekt-Transistor
NL7510282A (nl) Vertikale verbindingstransistoren met veldwerking.
SE383582B (sv) Halvledaranordning och sett for dess framstellning
SU545055A1 (ru) Транзисторный инвертор
FR2286601A1 (fr) Perfectionnement aux machines de fenaison polyvalentes