CA1038968A - Manufacture of complementary vertical transistors - Google Patents

Manufacture of complementary vertical transistors

Info

Publication number
CA1038968A
CA1038968A CA234,241A CA234241A CA1038968A CA 1038968 A CA1038968 A CA 1038968A CA 234241 A CA234241 A CA 234241A CA 1038968 A CA1038968 A CA 1038968A
Authority
CA
Canada
Prior art keywords
type
boron
doped
substrate
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA234,241A
Other languages
English (en)
French (fr)
Inventor
Aristides A. Yiannoulos
William E. Beadle
Stanley F. Moyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1038968A publication Critical patent/CA1038968A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CA234,241A 1974-09-19 1975-08-27 Manufacture of complementary vertical transistors Expired CA1038968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (1)

Publication Number Publication Date
CA1038968A true CA1038968A (en) 1978-09-19

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
CA234,241A Expired CA1038968A (en) 1974-09-19 1975-08-27 Manufacture of complementary vertical transistors

Country Status (10)

Country Link
JP (1) JPS5157172A (it)
BE (1) BE833455A (it)
CA (1) CA1038968A (it)
DE (1) DE2541161A1 (it)
ES (1) ES440909A0 (it)
FR (1) FR2285717A1 (it)
GB (1) GB1525247A (it)
IT (1) IT1042581B (it)
NL (1) NL7510994A (it)
SE (1) SE403214B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (ja) * 1986-01-13 1995-02-15 三洋電機株式会社 縦型ｐｎｐトランジスタ
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors

Also Published As

Publication number Publication date
FR2285717A1 (fr) 1976-04-16
DE2541161A1 (de) 1976-04-01
GB1525247A (en) 1978-09-20
SE403214B (sv) 1978-07-31
BE833455A (fr) 1976-01-16
SE7510075L (sv) 1976-03-22
JPS5157172A (it) 1976-05-19
IT1042581B (it) 1980-01-30
ES440909A0 (es) 1977-03-16
NL7510994A (nl) 1976-03-23
FR2285717B1 (it) 1980-04-30

Similar Documents

Publication Publication Date Title
CA1048656A (en) Fabricating high performance integrated bipolar and complementary field effect transistors
US5098852A (en) Method of manufacturing a semiconductor device by mega-electron volt ion implantation
US4087900A (en) Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
US4345366A (en) Self-aligned all-n+ polysilicon CMOS process
JPH05347383A (ja) 集積回路の製法
EP0256315A1 (de) Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung
JPH0147014B2 (it)
GB1421222A (en) Transistors and to methods of making them
JPS62174966A (ja) 半導体装置の製造方法
JPH0123953B2 (it)
JPH05183046A (ja) Ｐｎｐ装置用ｐ埋め込み層の製造方法
EP0078725B1 (en) Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure
CA1038968A (en) Manufacture of complementary vertical transistors
KR910009034B1 (ko) 반도체장치의 제조방법
US4535529A (en) Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types
US3730786A (en) Performance matched complementary pair transistors
US5691226A (en) Method of manufacturing BICMOS integrated circuits
US3898107A (en) Method of making a junction-isolated semiconductor integrated circuit device
EP0301468B1 (en) Process for fabricating complementary contactless vertical bipolar transistors
US3841918A (en) Method of integrated circuit fabrication
JPS62235781A (ja) トランジスタの製造方法
JPH1055976A (ja) 種々の埋められた領域を有する半導体装置の製造方法
JPS6241426B2 (it)
JP2506129B2 (ja) 半導体装置の製造方法
KR0151122B1 (ko) 바이폴라소자의 제조방법