FR2285717A1 - Procede de fabrication de transistors monolithiques complementaires, et produits obtenus - Google Patents

Procede de fabrication de transistors monolithiques complementaires, et produits obtenus

Info

Publication number
FR2285717A1
FR2285717A1 FR7528624A FR7528624A FR2285717A1 FR 2285717 A1 FR2285717 A1 FR 2285717A1 FR 7528624 A FR7528624 A FR 7528624A FR 7528624 A FR7528624 A FR 7528624A FR 2285717 A1 FR2285717 A1 FR 2285717A1
Authority
FR
France
Prior art keywords
manufacturing process
products obtained
complementary
transistors
monolithic transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7528624A
Other languages
English (en)
Other versions
FR2285717B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2285717A1 publication Critical patent/FR2285717A1/fr
Application granted granted Critical
Publication of FR2285717B1 publication Critical patent/FR2285717B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7528624A 1974-09-19 1975-09-18 Procede de fabrication de transistors monolithiques complementaires, et produits obtenus Granted FR2285717A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (2)

Publication Number Publication Date
FR2285717A1 true FR2285717A1 (fr) 1976-04-16
FR2285717B1 FR2285717B1 (fr) 1980-04-30

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528624A Granted FR2285717A1 (fr) 1974-09-19 1975-09-18 Procede de fabrication de transistors monolithiques complementaires, et produits obtenus

Country Status (10)

Country Link
JP (1) JPS5157172A (fr)
BE (1) BE833455A (fr)
CA (1) CA1038968A (fr)
DE (1) DE2541161A1 (fr)
ES (1) ES440909A0 (fr)
FR (1) FR2285717A1 (fr)
GB (1) GB1525247A (fr)
IT (1) IT1042581B (fr)
NL (1) NL7510994A (fr)
SE (1) SE403214B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0347550A2 (fr) * 1988-06-21 1989-12-27 Texas Instruments Incorporated Procédé pour l'intégration de transistors bipolaires isolés verticaux et à grand bêta

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (ja) * 1986-01-13 1995-02-15 三洋電機株式会社 縦型ｐｎｐトランジスタ
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0347550A2 (fr) * 1988-06-21 1989-12-27 Texas Instruments Incorporated Procédé pour l'intégration de transistors bipolaires isolés verticaux et à grand bêta
EP0347550A3 (fr) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Procédé pour l'intégration de transistors bipolaires isolés verticaux et à grand bêta

Also Published As

Publication number Publication date
BE833455A (fr) 1976-01-16
SE403214B (sv) 1978-07-31
GB1525247A (en) 1978-09-20
DE2541161A1 (de) 1976-04-01
IT1042581B (it) 1980-01-30
NL7510994A (nl) 1976-03-23
FR2285717B1 (fr) 1980-04-30
JPS5157172A (fr) 1976-05-19
ES440909A0 (es) 1977-03-16
CA1038968A (fr) 1978-09-19
SE7510075L (sv) 1976-03-22

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Legal Events

Date Code Title Description
ST Notification of lapse