BE817664R - Transistor bipolaire et procede de fabrication de celui-ci - Google Patents

Transistor bipolaire et procede de fabrication de celui-ci

Info

Publication number
BE817664R
BE817664R BE146565A BE146565A BE817664R BE 817664 R BE817664 R BE 817664R BE 146565 A BE146565 A BE 146565A BE 146565 A BE146565 A BE 146565A BE 817664 R BE817664 R BE 817664R
Authority
BE
Belgium
Prior art keywords
same
manufacturing process
bipolar transistor
bipolar
transistor
Prior art date
Application number
BE146565A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00379408A external-priority patent/US3856578A/en
Application filed filed Critical
Application granted granted Critical
Publication of BE817664R publication Critical patent/BE817664R/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
BE146565A 1973-07-16 1974-07-15 Transistor bipolaire et procede de fabrication de celui-ci BE817664R (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00379408A US3856578A (en) 1972-03-13 1973-07-16 Bipolar transistors and method of manufacture

Publications (1)

Publication Number Publication Date
BE817664R true BE817664R (fr) 1974-11-04

Family

ID=23497136

Family Applications (1)

Application Number Title Priority Date Filing Date
BE146565A BE817664R (fr) 1973-07-16 1974-07-15 Transistor bipolaire et procede de fabrication de celui-ci

Country Status (7)

Country Link
JP (1) JPS5050876A (fr)
BE (1) BE817664R (fr)
DE (1) DE2433839A1 (fr)
FR (1) FR2238245B2 (fr)
GB (1) GB1472997A (fr)
NL (1) NL167548B (fr)
SE (1) SE405526B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
EP0071665B1 (fr) * 1981-08-08 1986-04-16 Deutsche ITT Industries GmbH Procédé pour la fabrication d'un circuit intégré à corps solide et monolithique ayant au moins un transistor bipolaire plan
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
SE405526B (sv) 1978-12-11
JPS5050876A (fr) 1975-05-07
NL167548B (nl) 1981-07-16
SE7408945L (sv) 1975-01-17
FR2238245A2 (fr) 1975-02-14
GB1472997A (en) 1977-05-11
FR2238245B2 (fr) 1978-03-17
NL7409555A (nl) 1975-01-20
DE2433839A1 (de) 1975-02-06

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