GB1472997A - Transistors and to methods of making them - Google Patents

Transistors and to methods of making them

Info

Publication number
GB1472997A
GB1472997A GB3134174A GB3134174A GB1472997A GB 1472997 A GB1472997 A GB 1472997A GB 3134174 A GB3134174 A GB 3134174A GB 3134174 A GB3134174 A GB 3134174A GB 1472997 A GB1472997 A GB 1472997A
Authority
GB
United Kingdom
Prior art keywords
transistors
making
maxima
inflection
july
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3134174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00379408A external-priority patent/US3856578A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1472997A publication Critical patent/GB1472997A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

1472997 Transistors WESTERN ELECTRIC CO Inc 16 July 1974 [16 July 1973] 31341/74 Addition to 1421222 Heading H1K The method of making transistors described in Specification 1,421,222 is so modified that the composite impurity concentration profile 22 (Fig. 4) of the base region dopants exhibits a point of inflection I rather than a minimum between the maxima of the individual impurity profiles 23, 24, the emitter junction being located between this point of inflection and the deeper of the maxima. Details of the processing steps are given, the method being particularly applicable to transistors capable of operation at frequencies above 500 MHz.
GB3134174A 1973-07-16 1974-07-16 Transistors and to methods of making them Expired GB1472997A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00379408A US3856578A (en) 1972-03-13 1973-07-16 Bipolar transistors and method of manufacture

Publications (1)

Publication Number Publication Date
GB1472997A true GB1472997A (en) 1977-05-11

Family

ID=23497136

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3134174A Expired GB1472997A (en) 1973-07-16 1974-07-16 Transistors and to methods of making them

Country Status (7)

Country Link
JP (1) JPS5050876A (en)
BE (1) BE817664R (en)
DE (1) DE2433839A1 (en)
FR (1) FR2238245B2 (en)
GB (1) GB1472997A (en)
NL (1) NL167548B (en)
SE (1) SE405526B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
EP0071665B1 (en) * 1981-08-08 1986-04-16 Deutsche ITT Industries GmbH Method of producing a monolithic integrated solid-state circuit with at a least one bipolar planar transistor
JPH07118484B2 (en) * 1987-10-09 1995-12-18 沖電気工業株式会社 Method for manufacturing Schottky gate field effect transistor

Also Published As

Publication number Publication date
FR2238245B2 (en) 1978-03-17
NL7409555A (en) 1975-01-20
DE2433839A1 (en) 1975-02-06
SE7408945L (en) 1975-01-17
SE405526B (en) 1978-12-11
NL167548B (en) 1981-07-16
FR2238245A2 (en) 1975-02-14
JPS5050876A (en) 1975-05-07
BE817664R (en) 1974-11-04

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee