JPS533779A - Production of junction type field effect transistor - Google Patents
Production of junction type field effect transistorInfo
- Publication number
- JPS533779A JPS533779A JP7837276A JP7837276A JPS533779A JP S533779 A JPS533779 A JP S533779A JP 7837276 A JP7837276 A JP 7837276A JP 7837276 A JP7837276 A JP 7837276A JP S533779 A JPS533779 A JP S533779A
- Authority
- JP
- Japan
- Prior art keywords
- production
- field effect
- effect transistor
- type field
- junction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To employ the production process of using a selective oxidation method in the production process of J-FETs and to achieve the higher frequency characteristics thereof.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7837276A JPS5832512B2 (en) | 1976-06-30 | 1976-06-30 | Manufacturing method of junction field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7837276A JPS5832512B2 (en) | 1976-06-30 | 1976-06-30 | Manufacturing method of junction field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS533779A true JPS533779A (en) | 1978-01-13 |
JPS5832512B2 JPS5832512B2 (en) | 1983-07-13 |
Family
ID=13660169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7837276A Expired JPS5832512B2 (en) | 1976-06-30 | 1976-06-30 | Manufacturing method of junction field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5832512B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116775A (en) * | 1981-12-28 | 1983-07-12 | テキサス・インスツルメンツ・インコ−ポレイテツド | Method and device for producing mesfet device |
JPS61169988U (en) * | 1985-04-11 | 1986-10-21 | ||
JPH0234938A (en) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | Semiconductor device |
-
1976
- 1976-06-30 JP JP7837276A patent/JPS5832512B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116775A (en) * | 1981-12-28 | 1983-07-12 | テキサス・インスツルメンツ・インコ−ポレイテツド | Method and device for producing mesfet device |
JPH0361338B2 (en) * | 1981-12-28 | 1991-09-19 | Texas Instruments Inc | |
JPS61169988U (en) * | 1985-04-11 | 1986-10-21 | ||
JPH0234938A (en) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5832512B2 (en) | 1983-07-13 |
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