JPS533779A - Production of junction type field effect transistor - Google Patents

Production of junction type field effect transistor

Info

Publication number
JPS533779A
JPS533779A JP7837276A JP7837276A JPS533779A JP S533779 A JPS533779 A JP S533779A JP 7837276 A JP7837276 A JP 7837276A JP 7837276 A JP7837276 A JP 7837276A JP S533779 A JPS533779 A JP S533779A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7837276A
Other languages
Japanese (ja)
Other versions
JPS5832512B2 (en
Inventor
Genshiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7837276A priority Critical patent/JPS5832512B2/en
Publication of JPS533779A publication Critical patent/JPS533779A/en
Publication of JPS5832512B2 publication Critical patent/JPS5832512B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To employ the production process of using a selective oxidation method in the production process of J-FETs and to achieve the higher frequency characteristics thereof.
COPYRIGHT: (C)1978,JPO&Japio
JP7837276A 1976-06-30 1976-06-30 Manufacturing method of junction field effect transistor Expired JPS5832512B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7837276A JPS5832512B2 (en) 1976-06-30 1976-06-30 Manufacturing method of junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7837276A JPS5832512B2 (en) 1976-06-30 1976-06-30 Manufacturing method of junction field effect transistor

Publications (2)

Publication Number Publication Date
JPS533779A true JPS533779A (en) 1978-01-13
JPS5832512B2 JPS5832512B2 (en) 1983-07-13

Family

ID=13660169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7837276A Expired JPS5832512B2 (en) 1976-06-30 1976-06-30 Manufacturing method of junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS5832512B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116775A (en) * 1981-12-28 1983-07-12 テキサス・インスツルメンツ・インコ−ポレイテツド Method and device for producing mesfet device
JPS61169988U (en) * 1985-04-11 1986-10-21
JPH0234938A (en) * 1988-07-25 1990-02-05 Matsushita Electron Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116775A (en) * 1981-12-28 1983-07-12 テキサス・インスツルメンツ・インコ−ポレイテツド Method and device for producing mesfet device
JPH0361338B2 (en) * 1981-12-28 1991-09-19 Texas Instruments Inc
JPS61169988U (en) * 1985-04-11 1986-10-21
JPH0234938A (en) * 1988-07-25 1990-02-05 Matsushita Electron Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5832512B2 (en) 1983-07-13

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