JPS5050876A - - Google Patents
Info
- Publication number
- JPS5050876A JPS5050876A JP49080825A JP8082574A JPS5050876A JP S5050876 A JPS5050876 A JP S5050876A JP 49080825 A JP49080825 A JP 49080825A JP 8082574 A JP8082574 A JP 8082574A JP S5050876 A JPS5050876 A JP S5050876A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10P30/204—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P30/21—
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00379408A US3856578A (en) | 1972-03-13 | 1973-07-16 | Bipolar transistors and method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5050876A true JPS5050876A (ja) | 1975-05-07 |
Family
ID=23497136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49080825A Pending JPS5050876A (ja) | 1973-07-16 | 1974-07-16 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5050876A (ja) |
| BE (1) | BE817664R (ja) |
| DE (1) | DE2433839A1 (ja) |
| FR (1) | FR2238245B2 (ja) |
| GB (1) | GB1472997A (ja) |
| NL (1) | NL167548B (ja) |
| SE (1) | SE405526B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3997367A (en) * | 1975-11-20 | 1976-12-14 | Bell Telephone Laboratories, Incorporated | Method for making transistors |
| EP0071665B1 (de) * | 1981-08-08 | 1986-04-16 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Festkörperschaltung mit mindestens einem bipolaren Planartransistor |
| JPH07118484B2 (ja) * | 1987-10-09 | 1995-12-18 | 沖電気工業株式会社 | ショットキーゲート電界効果トランジスタの製造方法 |
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1974
- 1974-07-08 SE SE7408945A patent/SE405526B/xx not_active IP Right Cessation
- 1974-07-15 BE BE146565A patent/BE817664R/xx active
- 1974-07-15 NL NL7409555.A patent/NL167548B/xx not_active IP Right Cessation
- 1974-07-15 FR FR7424570A patent/FR2238245B2/fr not_active Expired
- 1974-07-15 DE DE2433839A patent/DE2433839A1/de not_active Withdrawn
- 1974-07-16 GB GB3134174A patent/GB1472997A/en not_active Expired
- 1974-07-16 JP JP49080825A patent/JPS5050876A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2238245B2 (ja) | 1978-03-17 |
| NL7409555A (nl) | 1975-01-20 |
| GB1472997A (en) | 1977-05-11 |
| SE7408945L (sv) | 1975-01-17 |
| SE405526B (sv) | 1978-12-11 |
| DE2433839A1 (de) | 1975-02-06 |
| FR2238245A2 (ja) | 1975-02-14 |
| NL167548B (nl) | 1981-07-16 |
| BE817664R (fr) | 1974-11-04 |