SE405526B - TRANSISTOR AND KIT FOR ITS MANUFACTURE - Google Patents

TRANSISTOR AND KIT FOR ITS MANUFACTURE

Info

Publication number
SE405526B
SE405526B SE7408945A SE7408945A SE405526B SE 405526 B SE405526 B SE 405526B SE 7408945 A SE7408945 A SE 7408945A SE 7408945 A SE7408945 A SE 7408945A SE 405526 B SE405526 B SE 405526B
Authority
SE
Sweden
Prior art keywords
kit
transistor
manufacture
Prior art date
Application number
SE7408945A
Other languages
Swedish (sv)
Other versions
SE7408945L (en
Inventor
R S Payne
R J Scavuzzo
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00379408A external-priority patent/US3856578A/en
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE7408945L publication Critical patent/SE7408945L/en
Publication of SE405526B publication Critical patent/SE405526B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
SE7408945A 1973-07-16 1974-07-08 TRANSISTOR AND KIT FOR ITS MANUFACTURE SE405526B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00379408A US3856578A (en) 1972-03-13 1973-07-16 Bipolar transistors and method of manufacture

Publications (2)

Publication Number Publication Date
SE7408945L SE7408945L (en) 1975-01-17
SE405526B true SE405526B (en) 1978-12-11

Family

ID=23497136

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7408945A SE405526B (en) 1973-07-16 1974-07-08 TRANSISTOR AND KIT FOR ITS MANUFACTURE

Country Status (7)

Country Link
JP (1) JPS5050876A (en)
BE (1) BE817664R (en)
DE (1) DE2433839A1 (en)
FR (1) FR2238245B2 (en)
GB (1) GB1472997A (en)
NL (1) NL167548B (en)
SE (1) SE405526B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
DE3174397D1 (en) * 1981-08-08 1986-05-22 Itt Ind Gmbh Deutsche Method of producing a monolithic integrated solid-state circuit with at a least one bipolar planar transistor
JPH07118484B2 (en) * 1987-10-09 1995-12-18 沖電気工業株式会社 Method for manufacturing Schottky gate field effect transistor

Also Published As

Publication number Publication date
NL167548B (en) 1981-07-16
FR2238245B2 (en) 1978-03-17
BE817664R (en) 1974-11-04
FR2238245A2 (en) 1975-02-14
SE7408945L (en) 1975-01-17
NL7409555A (en) 1975-01-20
DE2433839A1 (en) 1975-02-06
JPS5050876A (en) 1975-05-07
GB1472997A (en) 1977-05-11

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