FR2238245A2 - - Google Patents

Info

Publication number
FR2238245A2
FR2238245A2 FR7424570A FR7424570A FR2238245A2 FR 2238245 A2 FR2238245 A2 FR 2238245A2 FR 7424570 A FR7424570 A FR 7424570A FR 7424570 A FR7424570 A FR 7424570A FR 2238245 A2 FR2238245 A2 FR 2238245A2
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7424570A
Other versions
FR2238245B2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00379408A external-priority patent/US3856578A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2238245A2 publication Critical patent/FR2238245A2/fr
Application granted granted Critical
Publication of FR2238245B2 publication Critical patent/FR2238245B2/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7424570A 1973-07-16 1974-07-15 Expired FR2238245B2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00379408A US3856578A (en) 1972-03-13 1973-07-16 Bipolar transistors and method of manufacture

Publications (2)

Publication Number Publication Date
FR2238245A2 true FR2238245A2 (fr) 1975-02-14
FR2238245B2 FR2238245B2 (fr) 1978-03-17

Family

ID=23497136

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7424570A Expired FR2238245B2 (fr) 1973-07-16 1974-07-15

Country Status (7)

Country Link
JP (1) JPS5050876A (fr)
BE (1) BE817664R (fr)
DE (1) DE2433839A1 (fr)
FR (1) FR2238245B2 (fr)
GB (1) GB1472997A (fr)
NL (1) NL167548B (fr)
SE (1) SE405526B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
EP0071665B1 (fr) * 1981-08-08 1986-04-16 Deutsche ITT Industries GmbH Procédé pour la fabrication d'un circuit intégré à corps solide et monolithique ayant au moins un transistor bipolaire plan
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
SE405526B (sv) 1978-12-11
DE2433839A1 (de) 1975-02-06
JPS5050876A (fr) 1975-05-07
SE7408945L (sv) 1975-01-17
GB1472997A (en) 1977-05-11
FR2238245B2 (fr) 1978-03-17
NL7409555A (nl) 1975-01-20
BE817664R (fr) 1974-11-04
NL167548B (nl) 1981-07-16

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