IT1013254B - Perfezionamento nei dispositivi a semi conduttore con strato di sbarramento schottky - Google Patents

Perfezionamento nei dispositivi a semi conduttore con strato di sbarramento schottky

Info

Publication number
IT1013254B
IT1013254B IT7451226A IT5122674A IT1013254B IT 1013254 B IT1013254 B IT 1013254B IT 7451226 A IT7451226 A IT 7451226A IT 5122674 A IT5122674 A IT 5122674A IT 1013254 B IT1013254 B IT 1013254B
Authority
IT
Italy
Prior art keywords
semi
improvement
barrier layer
schottky barrier
conductive devices
Prior art date
Application number
IT7451226A
Other languages
English (en)
Italian (it)
Original Assignee
Cutler Hammer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer Inc filed Critical Cutler Hammer Inc
Application granted granted Critical
Publication of IT1013254B publication Critical patent/IT1013254B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
IT7451226A 1973-10-09 1974-05-27 Perfezionamento nei dispositivi a semi conduttore con strato di sbarramento schottky IT1013254B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US404303A US3886580A (en) 1973-10-09 1973-10-09 Tantalum-gallium arsenide schottky barrier semiconductor device

Publications (1)

Publication Number Publication Date
IT1013254B true IT1013254B (it) 1977-03-30

Family

ID=23599071

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7451226A IT1013254B (it) 1973-10-09 1974-05-27 Perfezionamento nei dispositivi a semi conduttore con strato di sbarramento schottky

Country Status (8)

Country Link
US (1) US3886580A (de)
JP (1) JPS5116288B2 (de)
BR (1) BR7404510A (de)
CA (1) CA992221A (de)
DE (1) DE2436449C3 (de)
FR (1) FR2246980B1 (de)
GB (1) GB1446406A (de)
IT (1) IT1013254B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
JPS51141584A (en) * 1975-06-02 1976-12-06 Toshiba Corp A semiconductor unit
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
JPS5850428B2 (ja) * 1975-04-16 1983-11-10 株式会社東芝 メサ型半導体装置
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
US4075650A (en) * 1976-04-09 1978-02-21 Cutler-Hammer, Inc. Millimeter wave semiconductor device
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices
US4312113A (en) * 1978-10-23 1982-01-26 Eaton Corporation Method of making field-effect transistors with micron and submicron gate lengths
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
DE3005302C2 (de) * 1980-02-13 1985-12-12 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
DE3005301C2 (de) * 1980-02-13 1985-11-21 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
US4468682A (en) * 1981-11-12 1984-08-28 Gte Laboratories Incorporated Self-aligned high-frequency static induction transistor
US4474623A (en) * 1982-04-26 1984-10-02 Raytheon Company Method of passivating a semiconductor body
JPS6081859A (ja) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd シヨツトキ−障壁半導体装置
US4935805A (en) * 1988-05-16 1990-06-19 Eaton Corporation T-type undercut electrical contact on a semiconductor substrate
US4923827A (en) * 1988-05-16 1990-05-08 Eaton Corporation T-type undercut electrical contact process on a semiconductor substrate
US5622877A (en) * 1993-03-02 1997-04-22 Ramot University Authority For Applied Research & Industrial Development Ltd. Method for making high-voltage high-speed gallium arsenide power Schottky diode
WO1998056039A1 (en) * 1997-06-03 1998-12-10 University Of Utah Research Foundation Utilizing inherent rectifying characteristics of a substrate in semiconductor devices
KR100586948B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
US3672984A (en) * 1969-03-12 1972-06-27 Hitachi Ltd Method of forming the electrode of a semiconductor device
US3663279A (en) * 1969-11-19 1972-05-16 Bell Telephone Labor Inc Passivated semiconductor devices
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3717563A (en) * 1971-06-09 1973-02-20 Ibm Method of adhering gold to an insulating layer on a semiconductor substrate

Also Published As

Publication number Publication date
JPS5067560A (de) 1975-06-06
CA992221A (en) 1976-06-29
GB1446406A (en) 1976-08-18
DE2436449B2 (de) 1977-04-21
BR7404510A (pt) 1976-02-10
FR2246980A1 (de) 1975-05-02
DE2436449C3 (de) 1980-06-19
JPS5116288B2 (de) 1976-05-22
FR2246980B1 (de) 1978-01-13
DE2436449A1 (de) 1975-04-24
US3886580A (en) 1975-05-27

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