JPS5067560A - - Google Patents
Info
- Publication number
- JPS5067560A JPS5067560A JP49115732A JP11573274A JPS5067560A JP S5067560 A JPS5067560 A JP S5067560A JP 49115732 A JP49115732 A JP 49115732A JP 11573274 A JP11573274 A JP 11573274A JP S5067560 A JPS5067560 A JP S5067560A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US404303A US3886580A (en) | 1973-10-09 | 1973-10-09 | Tantalum-gallium arsenide schottky barrier semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5067560A true JPS5067560A (de) | 1975-06-06 |
| JPS5116288B2 JPS5116288B2 (de) | 1976-05-22 |
Family
ID=23599071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49115732A Expired JPS5116288B2 (de) | 1973-10-09 | 1974-10-09 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3886580A (de) |
| JP (1) | JPS5116288B2 (de) |
| BR (1) | BR7404510A (de) |
| CA (1) | CA992221A (de) |
| DE (1) | DE2436449C3 (de) |
| FR (1) | FR2246980B1 (de) |
| GB (1) | GB1446406A (de) |
| IT (1) | IT1013254B (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136878A (en) * | 1974-09-14 | 1976-03-27 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
| JPS6081859A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | シヨツトキ−障壁半導体装置 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51141584A (en) * | 1975-06-02 | 1976-12-06 | Toshiba Corp | A semiconductor unit |
| GB1485015A (en) * | 1974-10-29 | 1977-09-08 | Mullard Ltd | Semi-conductor device manufacture |
| JPS5850428B2 (ja) * | 1975-04-16 | 1983-11-10 | 株式会社東芝 | メサ型半導体装置 |
| US4201604A (en) * | 1975-08-13 | 1980-05-06 | Raytheon Company | Process for making a negative resistance diode utilizing spike doping |
| US4075650A (en) * | 1976-04-09 | 1978-02-21 | Cutler-Hammer, Inc. | Millimeter wave semiconductor device |
| US4307132A (en) * | 1977-12-27 | 1981-12-22 | International Business Machines Corp. | Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer |
| US4179533A (en) * | 1978-04-25 | 1979-12-18 | The United States Of America As Represented By The Secretary Of The Navy | Multi-refractory films for gallium arsenide devices |
| US4312113A (en) * | 1978-10-23 | 1982-01-26 | Eaton Corporation | Method of making field-effect transistors with micron and submicron gate lengths |
| US4379005A (en) * | 1979-10-26 | 1983-04-05 | International Business Machines Corporation | Semiconductor device fabrication |
| DE3005301C2 (de) * | 1980-02-13 | 1985-11-21 | Telefunken electronic GmbH, 7100 Heilbronn | Varaktor- oder Mischerdiode |
| DE3005302C2 (de) * | 1980-02-13 | 1985-12-12 | Telefunken electronic GmbH, 7100 Heilbronn | Varaktor- oder Mischerdiode |
| US4468682A (en) * | 1981-11-12 | 1984-08-28 | Gte Laboratories Incorporated | Self-aligned high-frequency static induction transistor |
| US4474623A (en) * | 1982-04-26 | 1984-10-02 | Raytheon Company | Method of passivating a semiconductor body |
| US4923827A (en) * | 1988-05-16 | 1990-05-08 | Eaton Corporation | T-type undercut electrical contact process on a semiconductor substrate |
| US4935805A (en) * | 1988-05-16 | 1990-06-19 | Eaton Corporation | T-type undercut electrical contact on a semiconductor substrate |
| US5622877A (en) * | 1993-03-02 | 1997-04-22 | Ramot University Authority For Applied Research & Industrial Development Ltd. | Method for making high-voltage high-speed gallium arsenide power Schottky diode |
| WO1998056039A1 (en) * | 1997-06-03 | 1998-12-10 | University Of Utah Research Foundation | Utilizing inherent rectifying characteristics of a substrate in semiconductor devices |
| KR100586948B1 (ko) * | 2004-01-19 | 2006-06-07 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| US7834367B2 (en) * | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3615929A (en) * | 1965-07-08 | 1971-10-26 | Texas Instruments Inc | Method of forming epitaxial region of predetermined thickness and article of manufacture |
| US3672984A (en) * | 1969-03-12 | 1972-06-27 | Hitachi Ltd | Method of forming the electrode of a semiconductor device |
| US3663279A (en) * | 1969-11-19 | 1972-05-16 | Bell Telephone Labor Inc | Passivated semiconductor devices |
| US3756924A (en) * | 1971-04-01 | 1973-09-04 | Texas Instruments Inc | Method of fabricating a semiconductor device |
| US3701931A (en) * | 1971-05-06 | 1972-10-31 | Ibm | Gold tantalum-nitrogen high conductivity metallurgy |
| US3717563A (en) * | 1971-06-09 | 1973-02-20 | Ibm | Method of adhering gold to an insulating layer on a semiconductor substrate |
-
1973
- 1973-10-09 US US404303A patent/US3886580A/en not_active Expired - Lifetime
-
1974
- 1974-05-13 CA CA199,683A patent/CA992221A/en not_active Expired
- 1974-05-20 FR FR7417434A patent/FR2246980B1/fr not_active Expired
- 1974-05-27 IT IT7451226A patent/IT1013254B/it active
- 1974-05-31 BR BR4510/74A patent/BR7404510A/pt unknown
- 1974-07-29 DE DE2436449A patent/DE2436449C3/de not_active Expired
- 1974-10-09 JP JP49115732A patent/JPS5116288B2/ja not_active Expired
- 1974-10-09 GB GB4378474A patent/GB1446406A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136878A (en) * | 1974-09-14 | 1976-03-27 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
| JPS5753669B2 (de) * | 1974-09-14 | 1982-11-13 | ||
| JPS6081859A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | シヨツトキ−障壁半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2436449C3 (de) | 1980-06-19 |
| CA992221A (en) | 1976-06-29 |
| BR7404510A (pt) | 1976-02-10 |
| FR2246980A1 (de) | 1975-05-02 |
| FR2246980B1 (de) | 1978-01-13 |
| GB1446406A (en) | 1976-08-18 |
| DE2436449A1 (de) | 1975-04-24 |
| JPS5116288B2 (de) | 1976-05-22 |
| IT1013254B (it) | 1977-03-30 |
| DE2436449B2 (de) | 1977-04-21 |
| US3886580A (en) | 1975-05-27 |