IT952392B - Perfezionamento nei dispositivi a semi conduttore per micro onde - Google Patents

Perfezionamento nei dispositivi a semi conduttore per micro onde

Info

Publication number
IT952392B
IT952392B IT49262/72A IT4926272A IT952392B IT 952392 B IT952392 B IT 952392B IT 49262/72 A IT49262/72 A IT 49262/72A IT 4926272 A IT4926272 A IT 4926272A IT 952392 B IT952392 B IT 952392B
Authority
IT
Italy
Prior art keywords
semi
improvement
conductive devices
micro waves
waves
Prior art date
Application number
IT49262/72A
Other languages
English (en)
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of IT952392B publication Critical patent/IT952392B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Junction Field-Effect Transistors (AREA)
IT49262/72A 1971-04-26 1972-03-27 Perfezionamento nei dispositivi a semi conduttore per micro onde IT952392B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13737371A 1971-04-26 1971-04-26

Publications (1)

Publication Number Publication Date
IT952392B true IT952392B (it) 1973-07-20

Family

ID=22477120

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49262/72A IT952392B (it) 1971-04-26 1972-03-27 Perfezionamento nei dispositivi a semi conduttore per micro onde

Country Status (6)

Country Link
US (1) US3755752A (it)
CA (1) CA962785A (it)
CH (1) CH560464A5 (it)
FR (1) FR2134473B1 (it)
GB (1) GB1380811A (it)
IT (1) IT952392B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
US4374012A (en) * 1977-09-14 1983-02-15 Raytheon Company Method of making semiconductor device having improved Schottky-barrier junction
US4197551A (en) * 1977-09-14 1980-04-08 Raytheon Company Semiconductor device having improved Schottky-barrier junction
DE2926756C2 (de) * 1979-07-03 1984-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Dioden-Anordnung
FR2573272A1 (fr) * 1984-11-14 1986-05-16 Int Standard Electric Corp Procede de realisation d'un substrat comportant un conducteur coaxial
GB9414311D0 (en) * 1994-07-15 1994-09-07 Philips Electronics Uk Ltd A transferred electron effect device
US6208210B1 (en) * 1999-04-07 2001-03-27 Ericsson Inc. Advanced hybrid power amplifier design
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
CN102738392B (zh) * 2012-07-06 2014-04-02 中国科学院微电子研究所 一种耿氏二极管、其制备方法及毫米波振荡器
US9398723B2 (en) 2013-08-29 2016-07-19 Eaton Corporation Apparatus and methods using heat pipes for linking electronic assemblies that unequally produce heat

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515952A (en) * 1965-02-17 1970-06-02 Motorola Inc Mounting structure for high power transistors
GB1161782A (en) * 1965-08-26 1969-08-20 Associated Semiconductor Mft Improvements in Semiconductor Devices.
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
GB1123389A (en) * 1965-12-20 1968-08-14 Matsushita Electronics Corp A solid state microwave oscillating device
US3457471A (en) * 1966-10-10 1969-07-22 Microwave Ass Semiconductor diodes of the junction type having a heat sink at the surface nearer to the junction
GB1234764A (en) * 1967-08-25 1971-06-09 Nat Res Dev Solid state radar
US3531698A (en) * 1968-05-21 1970-09-29 Hewlett Packard Co Current control in bulk negative conductance materials
US3675161A (en) * 1968-10-12 1972-07-04 Matsushita Electronics Corp Varactor-controlled pn junction semiconductor microwave oscillation device
NL6902447A (it) * 1969-02-14 1970-08-18
US3689900A (en) * 1970-08-31 1972-09-05 Gen Electric Photo-coded diode array for read only memory
US3673514A (en) * 1970-12-31 1972-06-27 Bell Telephone Labor Inc Schottky barrier transit time negative resistance diode circuits

Also Published As

Publication number Publication date
FR2134473A1 (it) 1972-12-08
FR2134473B1 (it) 1978-03-03
DE2220485B2 (de) 1976-10-14
CH560464A5 (it) 1975-03-27
GB1380811A (en) 1975-01-15
DE2220485A1 (de) 1972-11-16
US3755752A (en) 1973-08-28
CA962785A (en) 1975-02-11

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