IT1001098B - Dispositivo di memoria perfeziona to - Google Patents

Dispositivo di memoria perfeziona to

Info

Publication number
IT1001098B
IT1001098B IT41017/73A IT4101773A IT1001098B IT 1001098 B IT1001098 B IT 1001098B IT 41017/73 A IT41017/73 A IT 41017/73A IT 4101773 A IT4101773 A IT 4101773A IT 1001098 B IT1001098 B IT 1001098B
Authority
IT
Italy
Prior art keywords
perfected
memory device
memory
perfected memory
Prior art date
Application number
IT41017/73A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1001098B publication Critical patent/IT1001098B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
IT41017/73A 1972-12-29 1973-11-28 Dispositivo di memoria perfeziona to IT1001098B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31942572A 1972-12-29 1972-12-29

Publications (1)

Publication Number Publication Date
IT1001098B true IT1001098B (it) 1976-04-20

Family

ID=23242185

Family Applications (1)

Application Number Title Priority Date Filing Date
IT41017/73A IT1001098B (it) 1972-12-29 1973-11-28 Dispositivo di memoria perfeziona to

Country Status (7)

Country Link
US (1) US3797000A (it)
JP (1) JPS525234B2 (it)
CA (1) CA1019441A (it)
DE (1) DE2356275C2 (it)
FR (1) FR2212647B1 (it)
GB (1) GB1445450A (it)
IT (1) IT1001098B (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
US4123771A (en) * 1973-09-21 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Nonvolatile semiconductor memory
US3838405A (en) * 1973-10-03 1974-09-24 Ibm Non-volatile diode cross point memory array
DE2513207C2 (de) * 1974-09-20 1982-07-01 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2638730C2 (de) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
DE2643987C2 (de) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2643932C2 (de) * 1974-09-20 1984-02-16 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2525062C2 (de) 1975-06-05 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Matrixanordnung aus n-Kanal-Speicher-FET
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2505824C3 (de) * 1975-02-12 1982-04-15 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2505816C3 (de) * 1974-09-20 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2445137C3 (de) * 1974-09-20 1981-02-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2560220C2 (de) * 1975-03-25 1982-11-25 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
FR2307357A1 (fr) * 1975-04-11 1976-11-05 Thomson Csf Structure monolithique de stockage de charges electriques, procede de mise en charge de cette structure et composants electroniques d'application
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4127900A (en) * 1976-10-29 1978-11-28 Massachusetts Institute Of Technology Reading capacitor memories with a variable voltage ramp
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
JP3878681B2 (ja) 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
DE2201028C3 (de) * 1971-01-15 1981-07-09 Intel Corp., Mountain View, Calif. Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens

Also Published As

Publication number Publication date
CA1019441A (en) 1977-10-18
FR2212647A1 (it) 1974-07-26
FR2212647B1 (it) 1977-09-30
US3797000A (en) 1974-03-12
JPS525234B2 (it) 1977-02-10
JPS4998974A (it) 1974-09-19
DE2356275A1 (de) 1974-07-04
DE2356275C2 (de) 1984-10-04
GB1445450A (en) 1976-08-11

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