IN2015DN02030A - - Google Patents
Info
- Publication number
- IN2015DN02030A IN2015DN02030A IN2030DEN2015A IN2015DN02030A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A IN 2030DEN2015 A IN2030DEN2015 A IN 2030DEN2015A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A
- Authority
- IN
- India
- Prior art keywords
- wafer
- discloses
- group iii
- iii nitride
- present
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 abstract 5
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010297 mechanical methods and process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261694119P | 2012-08-28 | 2012-08-28 | |
PCT/US2013/032006 WO2014035481A1 (en) | 2012-08-28 | 2013-03-15 | Group iii nitride wafer and its production method |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN02030A true IN2015DN02030A (de) | 2015-08-14 |
Family
ID=48050922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2030DEN2015 IN2015DN02030A (de) | 2012-08-28 | 2013-03-15 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9543393B2 (de) |
EP (1) | EP2890537A1 (de) |
JP (1) | JP6144347B2 (de) |
KR (1) | KR101895035B1 (de) |
CN (1) | CN104781057B (de) |
IN (1) | IN2015DN02030A (de) |
TW (1) | TWI621163B (de) |
WO (1) | WO2014035481A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9790617B2 (en) * | 2006-04-07 | 2017-10-17 | Sixpoint Materials, Inc. | Group III nitride bulk crystals and their fabrication method |
US9518340B2 (en) | 2006-04-07 | 2016-12-13 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
CN104781057B (zh) | 2012-08-28 | 2018-04-24 | 希波特公司 | 第iii族氮化物晶片和其制造方法 |
EP2900851B1 (de) | 2012-09-25 | 2019-01-09 | SixPoint Materials, Inc. | Verfahren zur züchtung von gruppe-iii-nitridkristallen |
WO2014051684A1 (en) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Group iii nitride wafers and fabrication method and testing method |
WO2015107813A1 (ja) | 2014-01-17 | 2015-07-23 | 三菱化学株式会社 | GaN基板、GaN基板の製造方法、GaN結晶の製造方法および半導体デバイスの製造方法 |
JP6292080B2 (ja) * | 2014-08-21 | 2018-03-14 | 三菱ケミカル株式会社 | 非極性または半極性GaN基板 |
WO2018118220A1 (en) | 2016-12-23 | 2018-06-28 | Sixpoint Materials, Inc. | Electronic device using group iii nitride semiconductor and its fabrication method |
CN106783579B (zh) * | 2016-12-29 | 2019-12-13 | 苏州纳维科技有限公司 | Iii族氮化物衬底及其制备方法 |
JP2020535092A (ja) | 2017-09-26 | 2020-12-03 | シックスポイント マテリアルズ, インコーポレイテッド | 超臨界アンモニアの中での窒化ガリウムバルク結晶の成長のための種結晶および製造方法 |
CN108074834A (zh) * | 2018-01-08 | 2018-05-25 | 中国电子科技集团公司第四十六研究所 | 一种用于具有极性的异形晶片的极性面判定方法 |
KR102126186B1 (ko) * | 2018-06-27 | 2020-06-24 | 경희대학교 산학협력단 | 질화 갈륨 기판의 제조 방법 |
TWI836391B (zh) * | 2022-03-29 | 2024-03-21 | 兆遠科技股份有限公司 | 脆軟基板及脆軟基板製作方法 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5984998A (en) | 1997-11-14 | 1999-11-16 | American Iron And Steel Institute | Method and apparatus for off-gas composition sensing |
CN1446142A (zh) * | 2000-08-07 | 2003-10-01 | Memc电子材料有限公司 | 用双面抛光加工半导体晶片的方法 |
US7072034B2 (en) * | 2001-06-08 | 2006-07-04 | Kla-Tencor Corporation | Systems and methods for inspection of specimen surfaces |
CA2449714C (en) | 2001-06-06 | 2011-08-16 | Ammono Sp. Z O.O. | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
UA82180C2 (uk) | 2001-10-26 | 2008-03-25 | АММОНО Сп. с о. о | Об'ємний монокристал нітриду галію (варіанти) і основа для епітаксії |
US7638346B2 (en) | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US7022992B2 (en) | 2002-01-17 | 2006-04-04 | American Air Liquide, Inc. | Method and apparatus for real-time monitoring of furnace flue gases |
KR101088991B1 (ko) | 2002-12-11 | 2011-12-01 | 니치아 카가쿠 고교 가부시키가이샤 | 벌크 단결정 갈륨-함유 질화물의 제조공정 |
US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
KR100541111B1 (ko) | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | 다파장 반도체 레이저 제조방법 |
DE102004039076A1 (de) | 2004-08-12 | 2006-02-23 | Sms Demag Ag | Berührungslose Abgasmessung mittels FTIR-Spektroskopie an metallurgischen Aggregaten |
US20060124956A1 (en) | 2004-12-13 | 2006-06-15 | Hui Peng | Quasi group III-nitride substrates and methods of mass production of the same |
JP4849296B2 (ja) * | 2005-04-11 | 2012-01-11 | 日立電線株式会社 | GaN基板 |
JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物結晶の表面処理方法 |
JP5010597B2 (ja) | 2005-07-08 | 2012-08-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 耐圧釜を用いた超臨界アンモニア中でのiii族窒化物結晶の成長方法 |
JP4696886B2 (ja) * | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法 |
US7897490B2 (en) | 2005-12-12 | 2011-03-01 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
JP4803717B2 (ja) | 2005-12-13 | 2011-10-26 | 株式会社タカトリ | ワイヤソー |
US7878883B2 (en) * | 2006-01-26 | 2011-02-01 | Memc Electronics Materials, Inc. | Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control |
JP4930081B2 (ja) * | 2006-04-03 | 2012-05-09 | 住友電気工業株式会社 | GaN結晶基板 |
CN101437987A (zh) | 2006-04-07 | 2009-05-20 | 加利福尼亚大学董事会 | 生长大表面积氮化镓晶体 |
US9518340B2 (en) | 2006-04-07 | 2016-12-13 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
US8147612B2 (en) * | 2006-04-28 | 2012-04-03 | Sumitomo Electric Industries, Ltd. | Method for manufacturing gallium nitride crystal and gallium nitride wafer |
JP5332168B2 (ja) * | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物結晶の製造方法 |
US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
CN100592539C (zh) * | 2007-09-12 | 2010-02-24 | 泰谷光电科技股份有限公司 | 发光二极管元件的制造方法 |
JP4395812B2 (ja) * | 2008-02-27 | 2010-01-13 | 住友電気工業株式会社 | 窒化物半導体ウエハ−加工方法 |
WO2009149299A1 (en) * | 2008-06-04 | 2009-12-10 | Sixpoint Materials | Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
TWI460323B (zh) * | 2008-06-04 | 2014-11-11 | Sixpoint Materials Inc | 用於生長第iii族氮化物結晶之高壓容器及使用高壓容器生長第iii族氮化物結晶之方法及第iii族氮化物結晶 |
WO2009151642A1 (en) | 2008-06-12 | 2009-12-17 | Sixpoint Materials, Inc. | Method for testing group-iii nitride wafers and group iii-nitride wafers with test data |
MX2010014197A (es) | 2008-06-20 | 2011-03-21 | Ineos Usa Llc | Métodos para aislar dióxido de carbono en alcoholes por medio de gasificación y fermentación. |
US20120000415A1 (en) * | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
EP2313233A2 (de) | 2008-07-11 | 2011-04-27 | Saint-Gobain Abrasives, Inc. | Drahtschneidesystem |
WO2010017232A1 (en) | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8148801B2 (en) * | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US8680581B2 (en) * | 2008-12-26 | 2014-03-25 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor and template substrate |
CN102362016B (zh) | 2009-01-30 | 2014-10-22 | Amg艾迪卡斯特太阳能公司 | 晶种层和晶种层的制造方法 |
WO2010113237A1 (ja) | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
JP2011100860A (ja) * | 2009-11-06 | 2011-05-19 | Sumitomo Electric Ind Ltd | イオン注入iii族窒化物半導体基板ならびにiii族窒化物半導体層接合基板およびiii族窒化物半導体デバイスの製造方法 |
JP5471387B2 (ja) * | 2009-12-09 | 2014-04-16 | 三菱化学株式会社 | Iii族窒化物結晶半導体基板の製造方法、及びiii族窒化物結晶半導体基板 |
JP5757068B2 (ja) | 2010-08-02 | 2015-07-29 | 住友電気工業株式会社 | GaN結晶の成長方法 |
CN104781057B (zh) | 2012-08-28 | 2018-04-24 | 希波特公司 | 第iii族氮化物晶片和其制造方法 |
EP2900851B1 (de) | 2012-09-25 | 2019-01-09 | SixPoint Materials, Inc. | Verfahren zur züchtung von gruppe-iii-nitridkristallen |
WO2014051684A1 (en) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Group iii nitride wafers and fabrication method and testing method |
-
2013
- 2013-03-15 CN CN201380048864.4A patent/CN104781057B/zh active Active
- 2013-03-15 US US13/834,871 patent/US9543393B2/en active Active
- 2013-03-15 EP EP13715053.8A patent/EP2890537A1/de not_active Withdrawn
- 2013-03-15 KR KR1020157007789A patent/KR101895035B1/ko active IP Right Grant
- 2013-03-15 WO PCT/US2013/032006 patent/WO2014035481A1/en active Application Filing
- 2013-03-15 JP JP2015529788A patent/JP6144347B2/ja active Active
- 2013-03-15 IN IN2030DEN2015 patent/IN2015DN02030A/en unknown
- 2013-03-15 US US13/835,636 patent/US8921231B2/en active Active
- 2013-08-27 TW TW102130676A patent/TWI621163B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2890537A1 (de) | 2015-07-08 |
US8921231B2 (en) | 2014-12-30 |
KR20150088993A (ko) | 2015-08-04 |
CN104781057A (zh) | 2015-07-15 |
US20140065796A1 (en) | 2014-03-06 |
JP6144347B2 (ja) | 2017-06-07 |
TW201413807A (zh) | 2014-04-01 |
US9543393B2 (en) | 2017-01-10 |
TWI621163B (zh) | 2018-04-11 |
JP2015529626A (ja) | 2015-10-08 |
US20140061662A1 (en) | 2014-03-06 |
WO2014035481A1 (en) | 2014-03-06 |
KR101895035B1 (ko) | 2018-09-04 |
CN104781057B (zh) | 2018-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2015DN02030A (de) | ||
TW201614860A (en) | Systems and methods for preparing GaN and related materials for micro assembly | |
EP3352200A4 (de) | Epitaktischer sic-wafer, herstellungsvorrichtung für epitaktischen sic- wafer, verfahren zur herstellung eines epitaktischen sic-wafers und halbleiterbauelement | |
SG10201604524PA (en) | ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS | |
EP3314657A4 (de) | Transistorstrukturen aus galliumnitrid (gan) auf einem substrat | |
EP3331035A4 (de) | Lichtemittierendes gruppe-iii-nitrid-halbleiterbauelement und herstellungsverfahren dafür | |
EP3007209A4 (de) | Verfahren zur herstellung eines sic-einkristallsubstrats für epitaktischen sic-halbleiterwafer und sic-einkristallsubstrat für epitaktischen sic-halbleiterwafer | |
EP3330415A4 (de) | Verfahren zur herstellung eines epitaktischen siliciumcarbid-einkristallwafers | |
EP3314658A4 (de) | Gan-bauelemente auf manipulierten siliciumsubstraten | |
EP2755228A4 (de) | Epitaktischer siliciumcarbidwafer und herstellungsverfahren dafür | |
GB201210134D0 (en) | Selective sidewall growth of semiconductor material | |
EP2413350A4 (de) | Substrat zur züchtung von gruppe-iii-nitrid-halbleitern, epitaktisches substrat für gruppe-iii-nitrid-halbleiter, gruppe-iii-nitrid-halbleiterelement, freitragendes substrat für gruppe-iii-nitrid-halbleiter und herstellungsverfahren dafür | |
EP3605585A4 (de) | Verfahren zur herstellung von reformierten sic-wafern, an epitaxialschicht befestigter sic-wafer, herstellungsverfahren dafür und oberflächenbehandlungsverfahren | |
EP3193357A4 (de) | Verfahren zur verarbeitung eines halbleiterwafers, verfahren zur herstellung eines gebondeten wafers und verfahren zur herstellung eines epitaktischen wafers | |
PL2570523T3 (pl) | Sposób wytwarzania gazowego trójchlorku galu oraz sposób wytwarzania kryształu półprzewodnika azotkowego | |
TW201614083A (en) | Method for forming nitride semiconductor layer and method for manufacturing semiconductor device | |
GB2574879B (en) | Substrates for III-nitride epitaxy | |
EP3266907A4 (de) | Sic-epitaxialwafer und verfahren zur herstellung des sic-epitaxialwafers | |
EP3396030A4 (de) | Halbleitersubstrat und epitaktischer wafer sowie verfahren zur herstellung davon | |
EP3260581A4 (de) | Verfahren zur herstellung eines siliciumcarbid-einkristall-epitaxialwafers, siliciumcarbid-einkristall-epitaxialwafer | |
EP3171392A4 (de) | Verfahren zur herstellung eines epitaxischen siliciumcarbidsubstrats | |
EP3936644A4 (de) | Verfahren und vorrichtung zur herstellung eines epitaktischen sic-substrats | |
EP3141635A4 (de) | Halbleitersubstrat, epitaxialwafer und verfahren zur herstellung eines epitaxialwafers | |
EP2701184A4 (de) | Verbund-gan-substrat, verfahren zu seiner herstellung sowie gruppe-iii-nitrid-halbleitervorrichtung und herstellungsverfahren dafür | |
IN2014DN03101A (de) |