IN2015DN02030A - - Google Patents

Info

Publication number
IN2015DN02030A
IN2015DN02030A IN2030DEN2015A IN2015DN02030A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A IN 2030DEN2015 A IN2030DEN2015 A IN 2030DEN2015A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A
Authority
IN
India
Prior art keywords
wafer
discloses
group iii
iii nitride
present
Prior art date
Application number
Other languages
English (en)
Inventor
Tadao Hashimoto
Edward Letts
Sierra Hoff
Original Assignee
Sixpoint Materials Inc
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=48050922&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN2015DN02030(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sixpoint Materials Inc, Seoul Semiconductor Co Ltd filed Critical Sixpoint Materials Inc
Publication of IN2015DN02030A publication Critical patent/IN2015DN02030A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IN2030DEN2015 2012-08-28 2013-03-15 IN2015DN02030A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261694119P 2012-08-28 2012-08-28
PCT/US2013/032006 WO2014035481A1 (en) 2012-08-28 2013-03-15 Group iii nitride wafer and its production method

Publications (1)

Publication Number Publication Date
IN2015DN02030A true IN2015DN02030A (de) 2015-08-14

Family

ID=48050922

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2030DEN2015 IN2015DN02030A (de) 2012-08-28 2013-03-15

Country Status (8)

Country Link
US (2) US8921231B2 (de)
EP (1) EP2890537A1 (de)
JP (1) JP6144347B2 (de)
KR (1) KR101895035B1 (de)
CN (1) CN104781057B (de)
IN (1) IN2015DN02030A (de)
TW (1) TWI621163B (de)
WO (1) WO2014035481A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
US9790617B2 (en) * 2006-04-07 2017-10-17 Sixpoint Materials, Inc. Group III nitride bulk crystals and their fabrication method
KR101895035B1 (ko) 2012-08-28 2018-09-04 식스포인트 머터리얼즈 인코퍼레이티드 3족 질화물 웨이퍼 및 그의 제조 방법
EP2900851B1 (de) 2012-09-25 2019-01-09 SixPoint Materials, Inc. Verfahren zur züchtung von gruppe-iii-nitridkristallen
KR101812736B1 (ko) 2012-09-26 2017-12-27 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 웨이퍼 및 제작 방법과 시험 방법
WO2015107813A1 (ja) 2014-01-17 2015-07-23 三菱化学株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
JP6292080B2 (ja) * 2014-08-21 2018-03-14 三菱ケミカル株式会社 非極性または半極性ＧａＮ基板
US10134884B2 (en) 2016-12-23 2018-11-20 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method
CN106783579B (zh) * 2016-12-29 2019-12-13 苏州纳维科技有限公司 Iii族氮化物衬底及其制备方法
WO2019066787A1 (en) 2017-09-26 2019-04-04 Sixpoint Materials, Inc. CRYSTALLINE GERM FOR THE GROWTH OF A SOLID GALLIUM NITRIDE CRYSTAL IN SUPERCRITICAL AMMONIA AND METHOD OF MANUFACTURE
CN108074834A (zh) * 2018-01-08 2018-05-25 中国电子科技集团公司第四十六研究所 一种用于具有极性的异形晶片的极性面判定方法
KR102126186B1 (ko) * 2018-06-27 2020-06-24 경희대학교 산학협력단 질화 갈륨 기판의 제조 방법
TWI836391B (zh) * 2022-03-29 2024-03-21 兆遠科技股份有限公司 脆軟基板及脆軟基板製作方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5984998A (en) 1997-11-14 1999-11-16 American Iron And Steel Institute Method and apparatus for off-gas composition sensing
WO2002011947A2 (en) * 2000-08-07 2002-02-14 Memc Electronic Materials, Inc. Method for processing a semiconductor wafer using double-side polishing
US7072034B2 (en) * 2001-06-08 2006-07-04 Kla-Tencor Corporation Systems and methods for inspection of specimen surfaces
KR100850293B1 (ko) 2001-06-06 2008-08-04 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨함유 질화물을 얻기 위한 방법 및 장치
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
DE60234856D1 (de) * 2001-10-26 2010-02-04 Ammono Sp Zoo Substrat für epitaxie
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7022992B2 (en) 2002-01-17 2006-04-04 American Air Liquide, Inc. Method and apparatus for real-time monitoring of furnace flue gases
AU2003285767A1 (en) 2002-12-11 2004-06-30 Ammono Sp. Z O.O. Process for obtaining bulk monocrystalline gallium-containing nitride
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
KR100541111B1 (ko) 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
DE102004039076A1 (de) 2004-08-12 2006-02-23 Sms Demag Ag Berührungslose Abgasmessung mittels FTIR-Spektroskopie an metallurgischen Aggregaten
US20060124956A1 (en) 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
JP4849296B2 (ja) * 2005-04-11 2012-01-11 日立電線株式会社 ＧａＮ基板
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
US8709371B2 (en) 2005-07-08 2014-04-29 The Regents Of The University Of California Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
JP4696886B2 (ja) * 2005-12-08 2011-06-08 日立電線株式会社 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法
JP2009519202A (ja) 2005-12-12 2009-05-14 キーマ テクノロジーズ， インク． Ｉｉｉ族窒化物製品及び同製品の作製方法
JP4803717B2 (ja) 2005-12-13 2011-10-26 株式会社タカトリ ワイヤソー
US7878883B2 (en) 2006-01-26 2011-02-01 Memc Electronics Materials, Inc. Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control
JP4930081B2 (ja) * 2006-04-03 2012-05-09 住友電気工業株式会社 ＧａＮ結晶基板
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
KR20090008321A (ko) * 2006-04-28 2009-01-21 스미토모덴키고교가부시키가이샤 질화갈륨 결정을 제작하는 방법 및 질화갈륨 웨이퍼
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
CN100592539C (zh) * 2007-09-12 2010-02-24 泰谷光电科技股份有限公司 发光二极管元件的制造方法
JP4395812B2 (ja) 2008-02-27 2010-01-13 住友電気工業株式会社 窒化物半導体ウエハ−加工方法
WO2009149300A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
EP2281076A1 (de) * 2008-06-04 2011-02-09 Sixpoint Materials, Inc. Verfahren zur herstellung von gruppe-iii-nitrid-kristallen mit erhöhter kristallinität aus gruppe-iii-nitrid-anfangszüchtungen durch ammonothermales wachstum
WO2009151642A1 (en) 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
CN106867595A (zh) 2008-06-20 2017-06-20 伊内奥斯生物股份公司 通过气化和发酵将二氧化碳封存到醇中的方法
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
EP2313233A2 (de) 2008-07-11 2011-04-27 Saint-Gobain Abrasives, Inc. Drahtschneidesystem
CN102144052A (zh) 2008-08-07 2011-08-03 Soraa有限公司 大规模氨热制备氮化镓晶棒的方法
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8148801B2 (en) * 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8680581B2 (en) * 2008-12-26 2014-03-25 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor and template substrate
WO2010088046A1 (en) 2009-01-30 2010-08-05 Bp Corporation North America Inc. Seed layers and process of manufacturing seed layers
WO2010113237A1 (ja) 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP2011100860A (ja) * 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd イオン注入ｉｉｉ族窒化物半導体基板ならびにｉｉｉ族窒化物半導体層接合基板およびｉｉｉ族窒化物半導体デバイスの製造方法
JP5471387B2 (ja) * 2009-12-09 2014-04-16 三菱化学株式会社 Ｉｉｉ族窒化物結晶半導体基板の製造方法、及びｉｉｉ族窒化物結晶半導体基板
JP5757068B2 (ja) 2010-08-02 2015-07-29 住友電気工業株式会社 ＧａＮ結晶の成長方法
KR101895035B1 (ko) 2012-08-28 2018-09-04 식스포인트 머터리얼즈 인코퍼레이티드 3족 질화물 웨이퍼 및 그의 제조 방법
EP2900851B1 (de) 2012-09-25 2019-01-09 SixPoint Materials, Inc. Verfahren zur züchtung von gruppe-iii-nitridkristallen
KR101812736B1 (ko) 2012-09-26 2017-12-27 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 웨이퍼 및 제작 방법과 시험 방법

Also Published As

Publication number Publication date
CN104781057B (zh) 2018-04-24
KR20150088993A (ko) 2015-08-04
TWI621163B (zh) 2018-04-11
EP2890537A1 (de) 2015-07-08
KR101895035B1 (ko) 2018-09-04
JP2015529626A (ja) 2015-10-08
CN104781057A (zh) 2015-07-15
TW201413807A (zh) 2014-04-01
US9543393B2 (en) 2017-01-10
WO2014035481A1 (en) 2014-03-06
US8921231B2 (en) 2014-12-30
JP6144347B2 (ja) 2017-06-07
US20140061662A1 (en) 2014-03-06
US20140065796A1 (en) 2014-03-06

Similar Documents

Publication Publication Date Title
IN2015DN02030A (de)
TW201614860A (en) Systems and methods for preparing GaN and related materials for micro assembly
EP3352200A4 (de) Epitaktischer sic-wafer, herstellungsvorrichtung für epitaktischen sic- wafer, verfahren zur herstellung eines epitaktischen sic-wafers und halbleiterbauelement
SG10201604524PA (en) ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
EP3314657A4 (de) Transistorstrukturen aus galliumnitrid (gan) auf einem substrat
EP3331035A4 (de) Lichtemittierendes gruppe-iii-nitrid-halbleiterbauelement und herstellungsverfahren dafür
EP3330415A4 (de) Verfahren zur herstellung eines epitaktischen siliciumcarbid-einkristallwafers
EP3007209A4 (de) Verfahren zur herstellung eines sic-einkristallsubstrats für epitaktischen sic-halbleiterwafer und sic-einkristallsubstrat für epitaktischen sic-halbleiterwafer
EP3314658A4 (de) Gan-bauelemente auf manipulierten siliciumsubstraten
EP2755228A4 (de) Epitaktischer siliciumcarbidwafer und herstellungsverfahren dafür
GB201210134D0 (en) Selective sidewall growth of semiconductor material
EP2413350A4 (de) Substrat zur züchtung von gruppe-iii-nitrid-halbleitern, epitaktisches substrat für gruppe-iii-nitrid-halbleiter, gruppe-iii-nitrid-halbleiterelement, freitragendes substrat für gruppe-iii-nitrid-halbleiter und herstellungsverfahren dafür
EP3605585A4 (de) Verfahren zur herstellung von reformierten sic-wafern, an epitaxialschicht befestigter sic-wafer, herstellungsverfahren dafür und oberflächenbehandlungsverfahren
TW201614083A (en) Method for forming nitride semiconductor layer and method for manufacturing semiconductor device
EP3193357A4 (de) Verfahren zur verarbeitung eines halbleiterwafers, verfahren zur herstellung eines gebondeten wafers und verfahren zur herstellung eines epitaktischen wafers
EP2570523A4 (de) Verfahren zur herstellung von galliumtrichloridgas und verfahren zur herstellung eines nitridhalbleiterkristalls
EP3396030A4 (de) Halbleitersubstrat und epitaktischer wafer sowie verfahren zur herstellung davon
GB2574879B (en) Substrates for III-nitride epitaxy
EP3266907A4 (de) Sic-epitaxialwafer und verfahren zur herstellung des sic-epitaxialwafers
EP3260581A4 (de) Verfahren zur herstellung eines siliciumcarbid-einkristall-epitaxialwafers, siliciumcarbid-einkristall-epitaxialwafer
EP3171392A4 (de) Verfahren zur herstellung eines epitaxischen siliciumcarbidsubstrats
EP3839108A4 (de) Gan-kristall vom n-typ, gan-wafer, gan-kristall, gan-wafer und verfahren zur herstellung eines nitridhalbleiterbauelements
EP3936644A4 (de) Verfahren und vorrichtung zur herstellung eines epitaktischen sic-substrats
EP2701184A4 (de) Verbund-gan-substrat, verfahren zu seiner herstellung sowie gruppe-iii-nitrid-halbleitervorrichtung und herstellungsverfahren dafür
EP2821532A4 (de) Verfahren zur verarbeitung von gruppe-iii-nitrid-substraten und verfahren zur herstellung epitaktischer substrate