IN2015DN01724A - - Google Patents

Info

Publication number
IN2015DN01724A
IN2015DN01724A IN1724DEN2015A IN2015DN01724A IN 2015DN01724 A IN2015DN01724 A IN 2015DN01724A IN 1724DEN2015 A IN1724DEN2015 A IN 1724DEN2015A IN 2015DN01724 A IN2015DN01724 A IN 2015DN01724A
Authority
IN
India
Prior art keywords
pair
lead frames
section
insulating film
sensor
Prior art date
Application number
Other languages
English (en)
Inventor
Noriaki Nagatomo
Hitoshi Inaba
Hiroshi Tanaka
Kazuta Takeshima
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2015DN01724A publication Critical patent/IN2015DN01724A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G01K13/04—Thermometers specially adapted for specific purposes for measuring temperature of moving solid bodies
    • G01K13/08—Thermometers specially adapted for specific purposes for measuring temperature of moving solid bodies in rotary movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Thermistors And Varistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
IN1724DEN2015 2012-09-06 2015-03-02 IN2015DN01724A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012195713A JP5896157B2 (ja) 2012-09-06 2012-09-06 温度センサ
PCT/JP2013/074441 WO2014038719A1 (ja) 2012-09-06 2013-09-03 温度センサ

Publications (1)

Publication Number Publication Date
IN2015DN01724A true IN2015DN01724A (ko) 2015-05-22

Family

ID=50237322

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1724DEN2015 IN2015DN01724A (ko) 2012-09-06 2015-03-02

Country Status (8)

Country Link
US (1) US9851262B2 (ko)
EP (1) EP2894447B1 (ko)
JP (1) JP5896157B2 (ko)
KR (1) KR102027626B1 (ko)
CN (1) CN104508442B (ko)
IN (1) IN2015DN01724A (ko)
TW (1) TW201423071A (ko)
WO (1) WO2014038719A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5896160B2 (ja) * 2012-09-28 2016-03-30 三菱マテリアル株式会社 温度センサ
JP5928831B2 (ja) * 2013-03-21 2016-06-01 三菱マテリアル株式会社 温度センサ
CN104807554B (zh) * 2015-03-03 2019-01-01 江苏多维科技有限公司 一种铜热电阻薄膜温度传感器芯片及其制备方法
JP6617909B2 (ja) * 2015-07-30 2019-12-11 三菱マテリアル株式会社 温度センサ
DE102015225584A1 (de) * 2015-12-17 2017-06-22 Robert Bosch Gmbh Startvorrichtung für eine Brennkraftmaschine
JP2017134024A (ja) 2016-01-29 2017-08-03 三菱マテリアル株式会社 温度センサ
JP2018146403A (ja) * 2017-03-06 2018-09-20 Koa株式会社 温度センサ素子
JP2018151227A (ja) * 2017-03-13 2018-09-27 三菱マテリアル株式会社 温度センサ
US11300458B2 (en) 2017-09-05 2022-04-12 Littelfuse, Inc. Temperature sensing tape, assembly, and method of temperature control
KR20190026630A (ko) * 2017-09-05 2019-03-13 리텔퓨즈 인코퍼레이티드 온도 감지 테이프
DE102018105400B3 (de) 2018-03-08 2019-07-04 Tmc Sensortechnik Gmbh Elektrischer Temperaturfühler
US11525739B2 (en) * 2018-05-08 2022-12-13 Texas Instruments Incorporated Thermistor die-based thermal probe

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JPH0314002Y2 (ko) * 1985-04-17 1991-03-28
JPS63104302A (ja) * 1986-10-21 1988-05-09 松下電器産業株式会社 ＳｉＣ薄膜サ−ミスタ
JPH0629793B2 (ja) 1987-02-20 1994-04-20 石塚電子株式会社 温度センサ
JPH03156331A (ja) * 1989-08-21 1991-07-04 Nkk Corp 温度センサ
DE4206082C1 (ko) 1992-02-27 1993-04-08 Siemens Ag, 8000 Muenchen, De
JP3276196B2 (ja) 1993-04-16 2002-04-22 石塚電子株式会社 温度センサ
JPH07240302A (ja) * 1994-02-25 1995-09-12 Hokuriku Electric Ind Co Ltd チップ状電子部品とその製造方法
AU721993B2 (en) * 1995-06-02 2000-07-20 A.H. Casting Services Limited Ceramic material with high density and thermal shock resistance, and method of preparation
JP3756607B2 (ja) * 1997-02-27 2006-03-15 石塚電子株式会社 温度センサ
JPH11121207A (ja) 1997-10-13 1999-04-30 Murata Mfg Co Ltd 温度センサ
JP4263274B2 (ja) * 1998-09-01 2009-05-13 石塚電子株式会社 温度センサ
JP4374632B2 (ja) 1998-11-27 2009-12-02 株式会社大泉製作所 定着ローラ用温度センサ
US20040224459A1 (en) * 1999-07-07 2004-11-11 Matsushita Electric Industrial Co., Ltd. Layered structure, method for manufacturing the same, and semiconductor element
US6989574B2 (en) * 2000-08-24 2006-01-24 Heetronix High temperature circuit structures with thin film layer
JP4436064B2 (ja) * 2003-04-16 2010-03-24 大阪府 サーミスタ用材料及びその製造方法
JP4838667B2 (ja) * 2006-09-01 2011-12-14 キヤノン株式会社 温度センサ及び定着装置
US20100104495A1 (en) * 2006-10-16 2010-04-29 Mitsubishi Chemical Corporation Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and device
JP2011044621A (ja) * 2009-08-23 2011-03-03 Mitsubishi Materials Corp 温度センサ
JP5494967B2 (ja) * 2010-09-23 2014-05-21 三菱マテリアル株式会社 温度センサ付き電池
JP5494968B2 (ja) * 2010-09-24 2014-05-21 三菱マテリアル株式会社 温度センサ
JP5477670B2 (ja) * 2012-02-28 2014-04-23 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
CN103717332B (zh) * 2012-06-29 2016-02-24 住友电工硬质合金株式会社 表面被覆切削工具

Also Published As

Publication number Publication date
JP2014052228A (ja) 2014-03-20
KR102027626B1 (ko) 2019-10-01
US9851262B2 (en) 2017-12-26
EP2894447A1 (en) 2015-07-15
CN104508442A (zh) 2015-04-08
WO2014038719A1 (ja) 2014-03-13
TW201423071A (zh) 2014-06-16
US20150226616A1 (en) 2015-08-13
KR20150052067A (ko) 2015-05-13
EP2894447A4 (en) 2016-06-01
CN104508442B (zh) 2017-08-29
EP2894447B1 (en) 2019-10-30
JP5896157B2 (ja) 2016-03-30

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