IN2014DN08078A - - Google Patents
Info
- Publication number
- IN2014DN08078A IN2014DN08078A IN8078DEN2014A IN2014DN08078A IN 2014DN08078 A IN2014DN08078 A IN 2014DN08078A IN 8078DEN2014 A IN8078DEN2014 A IN 8078DEN2014A IN 2014DN08078 A IN2014DN08078 A IN 2014DN08078A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201210205377 DE102012205377A1 (de) | 2012-04-02 | 2012-04-02 | Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwendung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module |
| PCT/EP2013/053144 WO2013149756A1 (de) | 2012-04-02 | 2013-02-18 | Mehrschicht-rückelektrode für eine photovoltaische dünnschichtsolarzelle und verwendung der selben für die herstellung von dünnschichtsolarzellen und -modulen, photovoltaische dünnschichtsolarzellen und -module enthaltend die mehrschicht-rückelektrode sowie ein verfahren zu deren herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN08078A true IN2014DN08078A (de) | 2015-05-01 |
Family
ID=47716071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN8078DEN2014 IN2014DN08078A (de) | 2012-04-02 | 2014-09-26 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20150114446A1 (de) |
| EP (1) | EP2834851B1 (de) |
| JP (1) | JP2015514324A (de) |
| KR (1) | KR20140138254A (de) |
| CN (1) | CN104350606B (de) |
| AU (2) | AU2013242989A1 (de) |
| DE (1) | DE102012205377A1 (de) |
| IN (1) | IN2014DN08078A (de) |
| WO (1) | WO2013149756A1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140311B (zh) * | 2015-07-10 | 2018-08-03 | 福建铂阳精工设备有限公司 | 背电极及其制作方法和电池组件 |
| CN105080577B (zh) * | 2015-09-11 | 2017-07-25 | 中国科学技术大学 | 二硒化钴纳米带组装球、其制备方法及其应用 |
| CN106298989B (zh) * | 2016-10-15 | 2018-05-22 | 凯盛光伏材料有限公司 | 一种提高薄膜太阳能电池背电极和吸收层附着力的方法 |
| KR20180043113A (ko) | 2016-10-19 | 2018-04-27 | 한국과학기술연구원 | 박막 태양전지 모듈 구조 및 이의 제조 방법 |
| US10269564B2 (en) * | 2017-03-17 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a semiconductor device using layered etching and repairing of damaged portions |
| GB201707670D0 (en) * | 2017-05-12 | 2017-06-28 | Johnson Matthey Plc | Conductiv paste, electrode and solar cell |
| CN110429142A (zh) * | 2018-04-27 | 2019-11-08 | 北京铂阳顶荣光伏科技有限公司 | 一种薄膜太阳能电池的制备方法 |
| CN112442674A (zh) | 2019-09-03 | 2021-03-05 | Asm Ip私人控股有限公司 | 用于沉积硫族化物膜的方法和设备以及包括膜的结构 |
| KR102077768B1 (ko) * | 2019-12-16 | 2020-02-17 | 한국과학기술연구원 | 박막 태양전지 모듈 구조 및 이의 제조 방법 |
| CN115498058B (zh) * | 2022-08-25 | 2025-07-22 | 电子科技大学长三角研究院(湖州) | 一种基于二维磁性材料的宽波段光电探测器及其制备方法 |
| US20240402006A1 (en) * | 2023-06-02 | 2024-12-05 | International Business Machines Corporation | Flexible ultraviolet sensor |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06252433A (ja) * | 1993-03-02 | 1994-09-09 | Fuji Electric Co Ltd | 薄膜太陽電池 |
| JPH08125206A (ja) * | 1994-10-27 | 1996-05-17 | Yazaki Corp | 薄膜太陽電池 |
| DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| FR2820241B1 (fr) * | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
| US6681592B1 (en) | 2001-02-16 | 2004-01-27 | Hamilton Sundstrand Corporation | Electrically driven aircraft cabin ventilation and environmental control system |
| US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
| SE0400631D0 (sv) * | 2004-03-11 | 2004-03-11 | Forskarpatent I Uppsala Ab | Thin film solar cell and manufacturing method |
| JP2006165386A (ja) * | 2004-12-09 | 2006-06-22 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池及びその作製方法 |
| JP4304638B2 (ja) * | 2007-07-13 | 2009-07-29 | オムロン株式会社 | Cis系太陽電池及びその製造方法 |
| AT10578U1 (de) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
| JP2009231744A (ja) * | 2008-03-25 | 2009-10-08 | Showa Denko Kk | I−iii−vi族カルコパイライト型薄膜系太陽電池およびその製造方法 |
| JP2011176287A (ja) * | 2010-02-01 | 2011-09-08 | Fujifilm Corp | 光電変換素子、薄膜太陽電池および光電変換素子の製造方法 |
| JP2011198883A (ja) * | 2010-03-18 | 2011-10-06 | Fujifilm Corp | 光電変換素子 |
| US20110240118A1 (en) | 2010-04-02 | 2011-10-06 | Paul Hanlon James Beatty | Method and device for scribing a thin film photovoltaic cell |
| JP4937379B2 (ja) * | 2010-06-11 | 2012-05-23 | 昭和シェル石油株式会社 | 薄膜太陽電池 |
| US8772076B2 (en) * | 2010-09-03 | 2014-07-08 | Solopower Systems, Inc. | Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells |
-
2012
- 2012-04-02 DE DE201210205377 patent/DE102012205377A1/de not_active Withdrawn
-
2013
- 2013-02-18 EP EP13704463.2A patent/EP2834851B1/de active Active
- 2013-02-18 WO PCT/EP2013/053144 patent/WO2013149756A1/de not_active Ceased
- 2013-02-18 AU AU2013242989A patent/AU2013242989A1/en not_active Abandoned
- 2013-02-18 US US14/389,158 patent/US20150114446A1/en not_active Abandoned
- 2013-02-18 JP JP2015503792A patent/JP2015514324A/ja active Pending
- 2013-02-18 CN CN201380028771.5A patent/CN104350606B/zh active Active
- 2013-02-18 KR KR1020147027721A patent/KR20140138254A/ko not_active Withdrawn
-
2014
- 2014-09-26 IN IN8078DEN2014 patent/IN2014DN08078A/en unknown
-
2017
- 2017-01-27 AU AU2017200544A patent/AU2017200544A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20150114446A1 (en) | 2015-04-30 |
| CN104350606A (zh) | 2015-02-11 |
| DE102012205377A1 (de) | 2013-10-02 |
| KR20140138254A (ko) | 2014-12-03 |
| WO2013149756A1 (de) | 2013-10-10 |
| CN104350606B (zh) | 2016-12-21 |
| EP2834851B1 (de) | 2020-08-12 |
| EP2834851A1 (de) | 2015-02-11 |
| AU2017200544A1 (en) | 2017-02-23 |
| AU2013242989A1 (en) | 2014-11-20 |
| JP2015514324A (ja) | 2015-05-18 |