IN2014CN00482A - - Google Patents

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Publication number
IN2014CN00482A
IN2014CN00482A IN482CHN2014A IN2014CN00482A IN 2014CN00482 A IN2014CN00482 A IN 2014CN00482A IN 482CHN2014 A IN482CHN2014 A IN 482CHN2014A IN 2014CN00482 A IN2014CN00482 A IN 2014CN00482A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Sozo Yokogawa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of IN2014CN00482A publication Critical patent/IN2014CN00482A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0256—Compact construction
    • G01J3/0259—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/027—Control of working procedures of a spectrometer; Failure detection; Bandwidth calculation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J2003/1213—Filters in general, e.g. dichroic, band
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G01J2003/2806—Array and filter array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G01J2003/2816—Semiconductor laminate layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G01J2003/282—Modified CCD or like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G01J2003/2826—Multispectral imaging, e.g. filter imaging

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Filters (AREA)
IN482CHN2014 2011-07-28 2014-01-21 IN2014CN00482A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011165786A JP5760811B2 (ja) 2011-07-28 2011-07-28 固体撮像素子および撮像システム
PCT/JP2012/067717 WO2013015117A1 (ja) 2011-07-28 2012-07-11 固体撮像素子および撮像システム

Publications (1)

Publication Number Publication Date
IN2014CN00482A true IN2014CN00482A (ja) 2015-04-03

Family

ID=47600969

Family Applications (1)

Application Number Title Priority Date Filing Date
IN482CHN2014 IN2014CN00482A (ja) 2011-07-28 2014-01-21

Country Status (10)

Country Link
US (2) US9960198B2 (ja)
EP (1) EP2738810B1 (ja)
JP (1) JP5760811B2 (ja)
KR (2) KR102031384B1 (ja)
CN (1) CN103733340B (ja)
BR (1) BR112014001426A2 (ja)
IN (1) IN2014CN00482A (ja)
RU (1) RU2014101709A (ja)
TW (1) TWI595635B (ja)
WO (1) WO2013015117A1 (ja)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5907011B2 (ja) 2012-09-07 2016-04-20 株式会社デンソー 光センサ
US9397129B2 (en) * 2013-03-15 2016-07-19 Taiwan Semiconductor Manufacturing Company Limited Dielectric film for image sensor
US20160064436A1 (en) * 2013-04-23 2016-03-03 Sharp Kabushiki Kaisha Circuit-integrated photoelectric converter and method for manufacturing the same
WO2014199720A1 (ja) * 2013-06-14 2014-12-18 シャープ株式会社 固体撮像装置
JP2015012128A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 撮像装置及び電子機器
US9876125B2 (en) * 2013-08-23 2018-01-23 Sharp Kabushiki Kaisha Photoelectric conversion device and method for manufacturing same
JP6214285B2 (ja) * 2013-09-04 2017-10-18 シャープ株式会社 カラーセンサ
CN105518870B (zh) * 2013-10-03 2017-05-17 夏普株式会社 光电转换装置
JP2015087526A (ja) * 2013-10-30 2015-05-07 旭化成株式会社 赤外線用バンドパスフィルタ
JP2015118081A (ja) * 2013-11-12 2015-06-25 キヤノン株式会社 放射線検出システムおよび放射線撮像装置
FR3014243B1 (fr) * 2013-12-04 2017-05-26 St Microelectronics Sa Procede de realisation d'un dispositif imageur integre a illumination face avant comportant au moins un filtre optique metallique, et dispositif correspondant
JP2015232599A (ja) * 2014-06-09 2015-12-24 ソニー株式会社 光学フィルタ、固体撮像装置、および電子機器
FR3025361B1 (fr) * 2014-08-29 2017-12-08 Commissariat Energie Atomique Capteur photosensible
CN107078138B (zh) * 2014-10-06 2020-12-18 索尼公司 固态摄像装置和电子设备
JP2016114627A (ja) * 2014-12-11 2016-06-23 シャープ株式会社 光学フィルタ
JP6072100B2 (ja) 2015-01-30 2017-02-01 キヤノン株式会社 放射線撮影システム、制御方法、制御方法、及びプログラム
JPWO2016158128A1 (ja) * 2015-03-31 2017-12-07 国立研究開発法人産業技術総合研究所 光検出装置および撮像装置
JP2017011002A (ja) * 2015-06-18 2017-01-12 ソニー株式会社 撮像素子、電子機器
US9628735B2 (en) * 2015-06-22 2017-04-18 Omnivision Technologies, Inc. Imaging systems with single-photon-avalanche-diodes and sensor translation, and associated methods
US9698191B2 (en) * 2015-08-21 2017-07-04 Qualcomm Incorporated System and method to extend near infrared spectral response for imaging systems
US9876995B2 (en) * 2015-12-04 2018-01-23 Visera Technologies Company Limited Image sensor
WO2017109175A1 (en) * 2015-12-23 2017-06-29 Koninklijke Philips N.V. Calibration slide for digital pathology
US10535701B2 (en) * 2016-01-12 2020-01-14 Omnivision Technologies, Inc. Plasmonic-nanostructure sensor pixel
CN107154428B (zh) * 2016-03-03 2019-12-24 上海新昇半导体科技有限公司 互补纳米线半导体器件及其制备方法
CN109716176B (zh) * 2016-06-07 2021-09-17 艾瑞3D 有限公司 用于深度采集和三维成像的光场成像装置和方法
US10310144B2 (en) * 2016-06-09 2019-06-04 Intel Corporation Image sensor having photodetectors with reduced reflections
KR102294845B1 (ko) 2016-08-02 2021-08-30 삼성전자주식회사 광학필터, 광학 디바이스, 및 광학필터의 제조방법
JPWO2018030213A1 (ja) * 2016-08-09 2019-06-13 ソニー株式会社 固体撮像素子、固体撮像素子の瞳補正方法、撮像装置及び情報処理装置
KR102320479B1 (ko) * 2016-08-22 2021-11-03 삼성전자주식회사 분광기 및 이를 이용한 스펙트럼 측정방법
KR102255789B1 (ko) 2016-08-30 2021-05-26 삼성전자주식회사 광학모듈 및 이를 이용한 광학디바이스
CN106324739A (zh) * 2016-11-25 2017-01-11 湖南宏动光电有限公司 一种基于表面等离激元的光谱成像微滤光片及其制备方法
CN108615737A (zh) * 2016-12-11 2018-10-02 南京理工大学 制作在透明基材上的可提高光传感器灵敏度的结构及应用
JP7066316B2 (ja) * 2016-12-13 2022-05-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
JP2018098641A (ja) * 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、プログラム、および電子機器
JP6910792B2 (ja) 2016-12-13 2021-07-28 ソニーセミコンダクタソリューションズ株式会社 データ処理装置、データ処理方法、プログラム、および電子機器
JP6789792B2 (ja) * 2016-12-13 2020-11-25 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP7154736B2 (ja) * 2016-12-13 2022-10-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP2018156999A (ja) * 2017-03-16 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子装置
JP6725060B2 (ja) * 2017-03-31 2020-07-15 日本電気株式会社 画像処理装置、画像処理システム、画像処理方法、及びプログラム
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
US11424279B2 (en) * 2017-05-16 2022-08-23 Sony Semiconductor Solutions Corporation Imaging element and electronic device including imaging device
AU2018297291B2 (en) * 2017-07-05 2024-03-07 Ouster, Inc. Light ranging device with electronically scanned emitter array and synchronized sensor array
WO2019087691A1 (ja) 2017-10-31 2019-05-09 パナソニックＩｐマネジメント株式会社 構造体およびその製造方法
DE102018124442A1 (de) 2017-11-15 2019-05-16 Taiwan Semiconductor Manufacturing Co. Ltd. Polarisatoren für Bildsensorvorrichtungen
US10367020B2 (en) * 2017-11-15 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Polarizers for image sensor devices
JP2019114576A (ja) * 2017-12-20 2019-07-11 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および固体撮像装置
JP2019113604A (ja) 2017-12-21 2019-07-11 ソニーセミコンダクタソリューションズ株式会社 電磁波処理装置
JP2019114602A (ja) * 2017-12-21 2019-07-11 ソニーセミコンダクタソリューションズ株式会社 電磁波処理装置
CN111357112B (zh) * 2017-12-22 2024-06-18 索尼半导体解决方案公司 固态成像装置和电子装置
JP2019129178A (ja) * 2018-01-22 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 半導体素子及び電子機器
JP2019140230A (ja) * 2018-02-09 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子装置、および、電子装置の製造方法
CN108844630A (zh) * 2018-04-16 2018-11-20 Oppo广东移动通信有限公司 成像装置、控制方法、电子装置、存储介质和计算机设备
CN108878585A (zh) * 2018-06-25 2018-11-23 中国科学院半导体研究所 多波段可见光至近红外焦平面探测器的制备方法
US11233081B2 (en) * 2018-09-26 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Wave guide filter for semiconductor imaging devices
JP2020113630A (ja) 2019-01-10 2020-07-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
EP3936837A4 (en) * 2019-03-06 2022-04-27 Panasonic Intellectual Property Management Co., Ltd. LIGHT DETECTION DEVICE AND SYSTEM, AND NETWORK OF FILTERS
KR20200108133A (ko) * 2019-03-06 2020-09-17 삼성전자주식회사 이미지 센서 및 이미징 장치
CN110058341A (zh) * 2019-04-23 2019-07-26 Oppo广东移动通信有限公司 一种彩色滤波片和cis制备方法
KR20200127715A (ko) 2019-05-03 2020-11-11 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN110346313A (zh) * 2019-07-31 2019-10-18 清华大学 一种光调制微纳结构、微集成光谱仪及光谱调制方法
CN110381243B (zh) * 2019-07-31 2024-03-12 清华大学 一种图像采集芯片、物体成像识别设备及物体成像识别方法
US11054310B2 (en) * 2019-09-05 2021-07-06 Coherent AI LLC Spectral sensor system employing a deep learning model for sensing light from arbitrary angles of incidence, and related hyperspectral imaging sensor
WO2021059409A1 (ja) * 2019-09-25 2021-04-01 日本電信電話株式会社 撮像素子および撮像装置
JP2021059044A (ja) 2019-10-04 2021-04-15 ナブテスコ株式会社 造形用透明樹脂組成物および立体造形物
CN113497065B (zh) * 2020-03-18 2024-03-26 吉林求是光谱数据科技有限公司 兼具光谱和成像功能的成像光谱芯片及其制备方法
JP2021150615A (ja) * 2020-03-23 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 センサ装置およびその製造方法
EP3933461A3 (en) * 2020-07-02 2022-03-16 Samsung Electronics Co., Ltd. Spectral filter, and image sensor and electronic device including the spectral filter
CN111811651B (zh) * 2020-07-23 2024-06-18 清华大学 光谱芯片、光谱仪及光谱芯片制备方法
WO2022085406A1 (ja) * 2020-10-19 2022-04-28 ソニーセミコンダクタソリューションズ株式会社 撮像素子、及び電子機器
CN114447006A (zh) 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括图像传感器的电子设备
JPWO2023032146A1 (ja) * 2021-09-03 2023-03-09
US20230093853A1 (en) * 2021-09-30 2023-03-30 Samsung Electronics Co., Ltd. Spectral filter, and image sensor and electronic device including the spectral filter
US11922606B2 (en) 2021-10-04 2024-03-05 Samsung Electronics Co., Ltd. Multipass interference correction and material recognition based on patterned illumination without frame rate loss
US20230170361A1 (en) * 2021-11-30 2023-06-01 Visera Technologies Company Ltd. Optical device
WO2024003159A1 (en) * 2022-07-01 2024-01-04 Admesy B.V. Luminance calibration device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2821421B2 (ja) * 1996-05-21 1998-11-05 日本電気株式会社 固体撮像装置
JP4076248B2 (ja) * 1997-09-09 2008-04-16 オリンパス株式会社 色再現装置
US6649901B2 (en) * 2002-03-14 2003-11-18 Nec Laboratories America, Inc. Enhanced optical transmission apparatus with improved aperture geometry
WO2005017570A2 (en) * 2003-08-06 2005-02-24 University Of Pittsburgh Surface plasmon-enhanced nano-optic devices and methods of making same
US7223960B2 (en) * 2003-12-03 2007-05-29 Micron Technology, Inc. Image sensor, an image sensor pixel, and methods of forming the same
US7329871B2 (en) * 2005-02-04 2008-02-12 Stc.Unm Plasmonic enhanced infrared detector element
KR100821346B1 (ko) * 2006-08-02 2008-04-10 삼성전자주식회사 화질이 향상되는 이미지 센서 및 이를 이용한 이미지 감지방법
JP2008177362A (ja) * 2007-01-18 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラ
US20100046077A1 (en) 2006-12-29 2010-02-25 Nanolambda Inc. Wavelength selective metallic embossing nanostructure
JP2008177191A (ja) * 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
US8054371B2 (en) * 2007-02-19 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter for image sensor
JP5076679B2 (ja) * 2007-06-28 2012-11-21 ソニー株式会社 固体撮像装置及びカメラモジュール
JP4702384B2 (ja) * 2008-03-26 2011-06-15 ソニー株式会社 固体撮像素子
JP4770928B2 (ja) * 2009-01-13 2011-09-14 ソニー株式会社 光学素子および固体撮像素子
US9395473B2 (en) * 2009-03-20 2016-07-19 Nanolambda, Inc. Nano-optic filter array based sensor
JP5121764B2 (ja) * 2009-03-24 2013-01-16 株式会社東芝 固体撮像装置
JP5428509B2 (ja) * 2009-05-11 2014-02-26 ソニー株式会社 ２次元固体撮像装置、及び、２次元固体撮像装置における偏光光データ処理方法
US8198578B2 (en) 2009-06-23 2012-06-12 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
JP5471117B2 (ja) * 2009-07-24 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法並びにカメラ
JP2011165786A (ja) 2010-02-08 2011-08-25 Seiko Epson Corp 光源装置、画像表示装置及びモニター装置
JP2012059865A (ja) * 2010-09-08 2012-03-22 Sony Corp 撮像素子および撮像装置
US9040913B2 (en) * 2011-12-19 2015-05-26 Nanohmics, Inc. Wavelength-selective, integrated resonance detector for electromagnetic radiation
JP6595157B2 (ja) 2014-03-04 2019-10-23 富士フイルム株式会社 細胞撮像制御装置および方法並びにプログラム

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