IN2013CN05221A - - Google Patents
Download PDFInfo
- Publication number
- IN2013CN05221A IN2013CN05221A IN5221CHN2013A IN2013CN05221A IN 2013CN05221 A IN2013CN05221 A IN 2013CN05221A IN 5221CHN2013 A IN5221CHN2013 A IN 5221CHN2013A IN 2013CN05221 A IN2013CN05221 A IN 2013CN05221A
- Authority
- IN
- India
- Prior art keywords
- nanoparticles
- nanoparticle
- substrate
- target
- hollow
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161432421P | 2011-01-13 | 2011-01-13 | |
PCT/US2012/021269 WO2012097268A2 (en) | 2011-01-13 | 2012-01-13 | Nanoparticle deposition systems |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2013CN05221A true IN2013CN05221A (zh) | 2015-08-07 |
Family
ID=46489954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN5221CHN2013 IN2013CN05221A (zh) | 2011-01-13 | 2012-01-13 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20120181171A1 (zh) |
EP (1) | EP2663666A4 (zh) |
CN (1) | CN103459658B (zh) |
IN (1) | IN2013CN05221A (zh) |
RU (1) | RU2013137749A (zh) |
WO (1) | WO2012097268A2 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016518240A (ja) * | 2013-02-15 | 2016-06-23 | リージェンツ オブ ザ ユニバーシティ オブ ミネソタ | 粒子の官能化 |
KR101772686B1 (ko) | 2016-02-02 | 2017-08-29 | 연세대학교 원주산학협력단 | 나노입자 약물 전달 장치 및 그의 제어 방법 |
KR20200036065A (ko) * | 2016-03-30 | 2020-04-06 | 케이힌 람테크 가부시키가이샤 | 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법 |
JP6807246B2 (ja) * | 2017-02-23 | 2021-01-06 | 東京エレクトロン株式会社 | 基板処理装置、および、処理システム |
GB2560008B (en) * | 2017-02-24 | 2020-03-25 | Binns David | An appratus and method related to core shell magnetic nanoparticles and structured nanoparticles |
GB2566995B (en) | 2017-09-29 | 2023-01-18 | Cotton Mouton Diagnostics Ltd | A method of detection |
CN110578127B (zh) * | 2019-10-31 | 2024-05-24 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
CN113564553A (zh) * | 2021-08-06 | 2021-10-29 | 昆山祁御新材料科技有限公司 | 一种旋转靶材的制作工艺及设备 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3669860A (en) * | 1970-04-01 | 1972-06-13 | Zenith Radio Corp | Method and apparatus for applying a film to a substrate surface by diode sputtering |
JP3034076B2 (ja) * | 1991-04-18 | 2000-04-17 | 日本真空技術株式会社 | 金属イオン源 |
US5228963A (en) * | 1991-07-01 | 1993-07-20 | Himont Incorporated | Hollow-cathode magnetron and method of making thin films |
US5482611A (en) * | 1991-09-30 | 1996-01-09 | Helmer; John C. | Physical vapor deposition employing ion extraction from a plasma |
US5334302A (en) * | 1991-11-15 | 1994-08-02 | Tokyo Electron Limited | Magnetron sputtering apparatus and sputtering gun for use in the same |
US7144627B2 (en) * | 1997-03-12 | 2006-12-05 | William Marsh Rice University | Multi-layer nanoshells comprising a metallic or conducting shell |
JPH111770A (ja) * | 1997-06-06 | 1999-01-06 | Anelva Corp | スパッタリング装置及びスパッタリング方法 |
US6217716B1 (en) * | 1998-05-06 | 2001-04-17 | Novellus Systems, Inc. | Apparatus and method for improving target erosion in hollow cathode magnetron sputter source |
SE521904C2 (sv) * | 1999-11-26 | 2003-12-16 | Ladislav Bardos | Anordning för hybridplasmabehandling |
US20040000478A1 (en) * | 2002-06-26 | 2004-01-01 | Guenzer Charles S. | Rotating hollow cathode magnetron |
US20060081467A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | Systems and methods for magnetron deposition |
CN101297059A (zh) * | 2005-10-24 | 2008-10-29 | 索莱拉斯有限公司 | 结合固定或者旋转靶的阴极与移动磁体组件的组合及其应用 |
JP5171636B2 (ja) * | 2005-12-13 | 2013-03-27 | エリコン・ソーラー・アクチェンゲゼルシャフト,トリュープバッハ | スパッタターゲット利用改善 |
US7951276B2 (en) * | 2006-06-08 | 2011-05-31 | The Board Of Trustees Of The University Of Illinois | Cluster generator |
EP2017367A1 (en) * | 2007-07-18 | 2009-01-21 | Applied Materials, Inc. | Sputter coating device and method of depositing a layer on a substrate |
US8263951B2 (en) * | 2008-06-13 | 2012-09-11 | Fablab Inc. | System and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith |
GB2461094B (en) * | 2008-06-20 | 2012-08-22 | Mantis Deposition Ltd | Deposition of materials |
CN201545907U (zh) * | 2009-11-17 | 2010-08-11 | 深圳市振恒昌实业有限公司 | 一种新型靶管旋转磁控溅射圆柱靶 |
WO2011159834A1 (en) * | 2010-06-15 | 2011-12-22 | Superdimension, Ltd. | Locatable expandable working channel and method |
-
2012
- 2012-01-13 US US13/350,421 patent/US20120181171A1/en not_active Abandoned
- 2012-01-13 EP EP12734741.7A patent/EP2663666A4/en not_active Withdrawn
- 2012-01-13 WO PCT/US2012/021269 patent/WO2012097268A2/en active Application Filing
- 2012-01-13 RU RU2013137749/02A patent/RU2013137749A/ru not_active Application Discontinuation
- 2012-01-13 IN IN5221CHN2013 patent/IN2013CN05221A/en unknown
- 2012-01-13 CN CN201280005339.XA patent/CN103459658B/zh not_active Expired - Fee Related
-
2017
- 2017-09-22 US US15/712,638 patent/US20180127865A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2012097268A3 (en) | 2013-01-17 |
RU2013137749A (ru) | 2015-02-20 |
US20120181171A1 (en) | 2012-07-19 |
EP2663666A2 (en) | 2013-11-20 |
WO2012097268A2 (en) | 2012-07-19 |
US20180127865A1 (en) | 2018-05-10 |
CN103459658B (zh) | 2015-09-23 |
CN103459658A (zh) | 2013-12-18 |
EP2663666A4 (en) | 2014-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2013CN05221A (zh) | ||
JP2015143396A5 (ja) | 酸化物半導体膜の成膜方法 | |
GB2506317B (en) | Atomic layer deposition of transition metal thin films | |
GB2519888A (en) | Film deposition assisted by angular selective etch | |
WO2012169747A3 (ko) | 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템 | |
IN2014DN11074A (zh) | ||
SG10201500148WA (en) | Ferromagnetic sputtering target with less particle generation | |
MY166492A (en) | Sputtering target for forming magnetic recording film and process for producing same | |
FR2986503B1 (fr) | Procede de gestion d'une commande d'orientation d'une partie orientable d'un atterrisseur d'aeronef. | |
EP2861780A4 (en) | Coating of a railway by means of atomic layer deposition | |
FR2976911B1 (fr) | Procede pour commander l'orientation d'une partie orientable d'un atterrisseur d'aeronef. | |
CN102199754A (zh) | 磁控溅射装置以及溅射方法 | |
MX2014004436A (es) | Cristal de control solar que comprende una capa de una aleacion que contene nicu. | |
GB201020503D0 (en) | Nanopore devices | |
IN2015DN00959A (zh) | ||
JP2015517170A5 (zh) | ||
IN2015DN00421A (zh) | ||
PT2586888T (pt) | Fonte de evaporação por arco tendo uma velocidade de formação de película elevada, dispositivo de formação de película e processo de fabrico de película de revestimento usando a fonte de evaporação por arco | |
FR2995323B1 (fr) | Procede de formation d'un revetement metallique sur une surface d'un substrat thermoplastique, et materiau composite correspondant | |
EP2779163A3 (en) | Non-Magnetic Seed Layer Method and Apparatus | |
WO2013097842A3 (de) | Vorrichtung zum verdampfen eines verdampfungsguts | |
AU2012247265A1 (en) | Electromagnetic actuator having magnetic generator | |
IN2012DN06287A (zh) | ||
EP2677065A4 (en) | Production method for r-fe-b sintered magnet having plating film on surface thereof | |
GB201209221D0 (en) | Solid material and method and composition for forming solid material |