IN2012DN05176A - - Google Patents
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- Publication number
- IN2012DN05176A IN2012DN05176A IN5176DEN2012A IN2012DN05176A IN 2012DN05176 A IN2012DN05176 A IN 2012DN05176A IN 5176DEN2012 A IN5176DEN2012 A IN 5176DEN2012A IN 2012DN05176 A IN2012DN05176 A IN 2012DN05176A
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
- B01J8/0207—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid flow within the bed being predominantly horizontal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1818—Feeding of the fluidising gas
- B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1872—Details of the fluidised bed reactor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
- B01J8/44—Fluidisation grids
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
- C01B33/031—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent by decomposition of silicon tetraiodide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23C—METHODS OR APPARATUS FOR COMBUSTION USING FLUID FUEL OR SOLID FUEL SUSPENDED IN A CARRIER GAS OR AIR
- F23C10/00—Fluidised bed combustion apparatus
- F23C10/18—Details; Accessories
- F23C10/20—Inlets for fluidisation air, e.g. grids; Bottoms
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B15/00—Fluidised-bed furnaces; Other furnaces using or treating finely-divided materials in dispersion
- F27B15/02—Details, accessories, or equipment peculiar to furnaces of these types
- F27B15/10—Arrangements of air or gas supply devices
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Dispersion Chemistry (AREA)
- Silicon Compounds (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29069209P | 2009-12-29 | 2009-12-29 | |
PCT/US2010/062088 WO2011090689A1 (en) | 2009-12-29 | 2010-12-23 | Methods for reducing the deposition of silicon on reactor walls using peripheral silicon tetrachloride |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN05176A true IN2012DN05176A (de) | 2015-10-23 |
Family
ID=43827215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN5176DEN2012 IN2012DN05176A (de) | 2009-12-29 | 2012-06-12 |
Country Status (10)
Country | Link |
---|---|
US (2) | US8828324B2 (de) |
EP (1) | EP2519343A1 (de) |
JP (1) | JP2013515673A (de) |
KR (1) | KR20120110109A (de) |
CN (1) | CN102686307A (de) |
IN (1) | IN2012DN05176A (de) |
NO (1) | NO20120828A1 (de) |
RU (1) | RU2012132435A (de) |
TW (1) | TW201136830A (de) |
WO (1) | WO2011090689A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102083522B (zh) | 2008-06-30 | 2014-03-26 | Memc电子材料有限公司 | 流化床反应器系统及减少硅沉积在反应器壁上的方法 |
KR101329030B1 (ko) | 2010-10-01 | 2013-11-13 | 주식회사 실리콘밸류 | 유동층 반응기 |
US8715597B2 (en) | 2010-12-20 | 2014-05-06 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems that involve disproportionation operations |
KR101329035B1 (ko) | 2011-04-20 | 2013-11-13 | 주식회사 실리콘밸류 | 유동층 반응기 |
US20130129570A1 (en) * | 2011-04-20 | 2013-05-23 | Siliconvalue Llc. | Polycrystal silicon manufacturing apparatus |
CN103842069B (zh) | 2011-09-30 | 2016-10-05 | Memc电子材料有限公司 | 通过使硅烷在流化床反应器中热分解而制备多晶硅 |
CN103842070B (zh) * | 2011-09-30 | 2017-07-21 | Memc电子材料有限公司 | 通过使硅烷在流化床反应器中热分解而制备多晶硅 |
US20130149228A1 (en) * | 2011-12-09 | 2013-06-13 | Siliken Chemicals, S.L. | Method, system and apparatus for controlling particle size in a fluidized bed reactor |
US8875728B2 (en) * | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
KR102098605B1 (ko) | 2012-08-29 | 2020-04-08 | 헴로크 세미컨덕터 오퍼레이션즈 엘엘씨 | 테이퍼 유동층 반응기 및 그의 사용 공정 |
DE102013206236A1 (de) * | 2013-04-09 | 2014-10-09 | Wacker Chemie Ag | Gasverteiler für Siemens-Reaktor |
DE102013208071A1 (de) * | 2013-05-02 | 2014-11-06 | Wacker Chemie Ag | Wirbelschichtreaktor und Verfahren zur Herstellung von granularem Polysilicium |
CN103553047A (zh) * | 2013-11-06 | 2014-02-05 | 苏州协鑫工业应用研究院有限公司 | 一种用于在反应器中生产多晶硅产品的方法及系统 |
US10252916B2 (en) | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
US10518237B2 (en) | 2015-04-01 | 2019-12-31 | Hanwha Chemical Corporation | Gas distribution unit for fluidized bed reactor system, fluidized bed reactor system having the gas distribution unit, and method for preparing granular polycrystalline silicon using the fluidized bed reactor system |
CN105170037B (zh) * | 2015-08-27 | 2018-09-11 | 攀钢集团攀枝花钢铁研究院有限公司 | 流化床反应器 |
CN105363391B (zh) * | 2015-11-12 | 2018-08-14 | 攀钢集团攀枝花钢铁研究院有限公司 | 用于流化床反应器的多管式气体分布器的导流结构 |
WO2017100564A1 (en) | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Reactor systems having multiple pressure balancers |
WO2017100404A1 (en) | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Reactor systems having external pressure balancer |
EP3569573A4 (de) | 2017-01-16 | 2019-11-20 | Tokuyama Corporation | Verfahren zur herstellung von polykristallinem silicium |
DE102017125221A1 (de) * | 2017-10-27 | 2019-05-02 | Nexwafe Gmbh | Verfahren und Vorrichtung zur Entfernung von Verunreinigungen aus Chlorsilanen |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2468508A (en) * | 1945-02-20 | 1949-04-26 | Standard Oil Dev Co | Conversion processes in the presence of a dense turbulent body of finely divided solid material |
US2487984A (en) * | 1945-10-31 | 1949-11-15 | Universal Oil Prod Co | Fluid distributing plate |
US2740752A (en) * | 1951-01-24 | 1956-04-03 | Gulf Research Development Co | Fluid catalytic process and apparatus |
US3016624A (en) * | 1959-01-02 | 1962-01-16 | Foster Wheeler Corp | Gas distribution baffle |
US3636923A (en) * | 1970-03-04 | 1972-01-25 | Atomic Energy Commission | Apparatus for coating microspheres with pyrolytic carbon |
US3933985A (en) * | 1971-09-24 | 1976-01-20 | Motorola, Inc. | Process for production of polycrystalline silicon |
US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
US4213937A (en) * | 1976-09-22 | 1980-07-22 | Texas Instruments Incorporated | Silicon refinery |
US4170667A (en) * | 1977-01-31 | 1979-10-09 | Motorola, Inc. | Process for manufacturing pure polycrystalline silicon |
US4318942A (en) * | 1978-08-18 | 1982-03-09 | J. C. Schumacher Company | Process for producing polycrystalline silicon |
US4464222A (en) * | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
JPS58185426A (ja) * | 1982-04-20 | 1983-10-29 | Hitachi Ltd | 高純度シリコンの製造方法 |
JPS5945917A (ja) | 1982-09-02 | 1984-03-15 | Denki Kagaku Kogyo Kk | 多結晶シリコンの連続的製法 |
US4818495A (en) * | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
JPS59107917A (ja) | 1982-12-07 | 1984-06-22 | Denki Kagaku Kogyo Kk | 多結晶シリコンの製造装置 |
US4529576A (en) * | 1982-12-27 | 1985-07-16 | Sri International | Process and apparatus for obtaining silicon from fluosilicic acid |
US4491604A (en) * | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
JPS6279843A (ja) * | 1985-10-03 | 1987-04-13 | Agency Of Ind Science & Technol | 流動層合成装置のガス分散板 |
US4868013A (en) * | 1987-08-21 | 1989-09-19 | Ethyl Corporation | Fluidized bed process |
DE3839705A1 (de) * | 1987-11-25 | 1989-06-08 | Union Carbide Corp | Beheizter wirbelschichtreaktor |
DE3910343A1 (de) | 1988-03-31 | 1989-10-12 | Union Carbide Corp | Aussenbeheizter wirbelschicht-reaktor |
JPH02279512A (ja) | 1989-04-20 | 1990-11-15 | Osaka Titanium Co Ltd | 高純度多結晶シリコンの製造方法 |
JPH04297515A (ja) * | 1991-03-25 | 1992-10-21 | Nkk Corp | 鉄鉱石の溶融還元設備における予備還元炉 |
GB2271518B (en) * | 1992-10-16 | 1996-09-25 | Korea Res Inst Chem Tech | Heating of fluidized bed reactor by microwave |
JPH06127924A (ja) | 1992-10-16 | 1994-05-10 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
JPH06191818A (ja) * | 1992-12-22 | 1994-07-12 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
US5798137A (en) * | 1995-06-07 | 1998-08-25 | Advanced Silicon Materials, Inc. | Method for silicon deposition |
WO1997048950A1 (fr) * | 1996-06-21 | 1997-12-24 | Ebara Corporation | Procede et appareil de gazeification de lit fluidise |
JP3737863B2 (ja) * | 1996-11-26 | 2006-01-25 | 株式会社トクヤマ | 粒状ポリシリコンの製造方法 |
DE19735378A1 (de) * | 1997-08-14 | 1999-02-18 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinem Siliciumgranulat |
GB9814064D0 (en) * | 1998-06-29 | 1998-08-26 | Boc Group Plc | Partial combustion of hydrogen sulphide |
DE19948395A1 (de) * | 1999-10-06 | 2001-05-03 | Wacker Chemie Gmbh | Strahlungsbeheizter Fliessbettreaktor |
US6368568B1 (en) * | 2000-02-18 | 2002-04-09 | Stephen M Lord | Method for improving the efficiency of a silicon purification process |
US6719952B1 (en) * | 2000-02-21 | 2004-04-13 | Westinghouse Electric Company Llc | Fluidized bed reaction design |
US6451277B1 (en) * | 2000-06-06 | 2002-09-17 | Stephen M Lord | Method of improving the efficiency of a silicon purification process |
EP1264798B1 (de) * | 2000-08-02 | 2016-08-31 | Mitsubishi Materials Corporation | Verfahren zur herstellung von disiliciumhexachlorid |
JP2002129455A (ja) * | 2000-10-17 | 2002-05-09 | Ibiden Co Ltd | 触媒コンバータ用保持シール材及びその製造方法、触媒コンバータ |
US6827786B2 (en) * | 2000-12-26 | 2004-12-07 | Stephen M Lord | Machine for production of granular silicon |
KR100411180B1 (ko) * | 2001-01-03 | 2003-12-18 | 한국화학연구원 | 다결정실리콘의 제조방법과 그 장치 |
DE60219497T2 (de) * | 2001-10-19 | 2008-01-03 | Tokuyama Corp., Shunan | Verfahren zur herstellung von silicium |
JP4038110B2 (ja) * | 2001-10-19 | 2008-01-23 | 株式会社トクヤマ | シリコンの製造方法 |
AU2002329626A1 (en) | 2002-07-22 | 2004-02-23 | Stephen M. Lord | Methods for heating a fluidized bed silicon manufacture apparatus |
US7179426B2 (en) * | 2002-09-12 | 2007-02-20 | Chevron Phillips Chemical Company, Lp | Large catalyst activator |
US20040241867A1 (en) * | 2003-01-17 | 2004-12-02 | Jones Mark L. | Method of analyzing a wafer for metal impurities |
US20080220166A1 (en) | 2005-07-19 | 2008-09-11 | Paul Edward Ege | Silicon Spout-Fluidized Bed |
DE102005042753A1 (de) * | 2005-09-08 | 2007-03-15 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Herstellung von granulatförmigem polykristallinem Silicium in einem Wirbelschichtreaktor |
BRPI0620401A2 (pt) * | 2005-12-23 | 2011-11-16 | Siemens Vai Metals Tech Gmbh | fundo distribuidor |
AT503349B1 (de) | 2005-12-23 | 2008-09-15 | Siemens Vai Metals Tech Gmbh | Verteilerboden |
KR100661284B1 (ko) * | 2006-02-14 | 2006-12-27 | 한국화학연구원 | 유동층 반응기를 이용한 다결정실리콘 제조 방법 |
KR100813131B1 (ko) * | 2006-06-15 | 2008-03-17 | 한국화학연구원 | 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 |
US7935327B2 (en) * | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
CN102083522B (zh) * | 2008-06-30 | 2014-03-26 | Memc电子材料有限公司 | 流化床反应器系统及减少硅沉积在反应器壁上的方法 |
US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
-
2010
- 2010-12-23 EP EP10805357A patent/EP2519343A1/de not_active Withdrawn
- 2010-12-23 WO PCT/US2010/062088 patent/WO2011090689A1/en active Application Filing
- 2010-12-23 JP JP2012547179A patent/JP2013515673A/ja active Pending
- 2010-12-23 KR KR1020127016871A patent/KR20120110109A/ko not_active Application Discontinuation
- 2010-12-23 US US12/977,849 patent/US8828324B2/en active Active
- 2010-12-23 US US12/977,739 patent/US20110158888A1/en not_active Abandoned
- 2010-12-23 RU RU2012132435/05A patent/RU2012132435A/ru not_active Application Discontinuation
- 2010-12-23 CN CN2010800600015A patent/CN102686307A/zh active Pending
- 2010-12-29 TW TW99146697A patent/TW201136830A/zh unknown
-
2012
- 2012-06-12 IN IN5176DEN2012 patent/IN2012DN05176A/en unknown
- 2012-07-17 NO NO20120828A patent/NO20120828A1/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
RU2012132435A (ru) | 2014-02-10 |
WO2011090689A4 (en) | 2011-09-22 |
KR20120110109A (ko) | 2012-10-09 |
US8828324B2 (en) | 2014-09-09 |
NO20120828A1 (no) | 2012-07-17 |
EP2519343A1 (de) | 2012-11-07 |
US20110158857A1 (en) | 2011-06-30 |
WO2011090689A1 (en) | 2011-07-28 |
JP2013515673A (ja) | 2013-05-09 |
TW201136830A (en) | 2011-11-01 |
US20110158888A1 (en) | 2011-06-30 |
CN102686307A (zh) | 2012-09-19 |