IN2012DN03272A - - Google Patents

Download PDF

Info

Publication number
IN2012DN03272A
IN2012DN03272A IN3272DEN2012A IN2012DN03272A IN 2012DN03272 A IN2012DN03272 A IN 2012DN03272A IN 3272DEN2012 A IN3272DEN2012 A IN 3272DEN2012A IN 2012DN03272 A IN2012DN03272 A IN 2012DN03272A
Authority
IN
India
Prior art keywords
solar cell
junction
reverse
mbe
intrinsic
Prior art date
Application number
Other languages
English (en)
Inventor
James David Garnett
Peter Dingus
Shumin Wang
Original Assignee
Uriel Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uriel Solar Inc filed Critical Uriel Solar Inc
Publication of IN2012DN03272A publication Critical patent/IN2012DN03272A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/0248—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
IN3272DEN2012 2009-12-10 2010-12-10 IN2012DN03272A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28553109P 2009-12-10 2009-12-10
PCT/US2010/059969 WO2011072269A2 (fr) 2009-12-10 2010-12-10 Structures de cellules photovoltaïques à semi-conducteur à couche mince de cdte polycristallin à haut rendement énergétique destinées à être utilisées dans la génération d'électricité solaire

Publications (1)

Publication Number Publication Date
IN2012DN03272A true IN2012DN03272A (fr) 2015-10-23

Family

ID=44141563

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3272DEN2012 IN2012DN03272A (fr) 2009-12-10 2010-12-10

Country Status (8)

Country Link
US (1) US20110139249A1 (fr)
EP (1) EP2481094A4 (fr)
JP (1) JP5813654B2 (fr)
CN (1) CN102714252A (fr)
BR (1) BR112012012383A2 (fr)
CA (1) CA2780175A1 (fr)
IN (1) IN2012DN03272A (fr)
WO (1) WO2011072269A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298856B2 (en) 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
US20120192923A1 (en) * 2011-02-01 2012-08-02 General Electric Company Photovoltaic device
WO2012177804A2 (fr) * 2011-06-20 2012-12-27 Alliance For Sustainable Energy, Llc Dispositifs en cdte améliorés et leur procédé de fabrication
EP2805356A2 (fr) * 2012-01-17 2014-11-26 First Solar, Inc Dispositif photovoltaïque qui comprend de multiples couches d'absorbeur et procédé de fabrication de ce dernier
US9324898B2 (en) 2012-09-25 2016-04-26 Alliance For Sustainable Energy, Llc Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
EP2939264A1 (fr) * 2012-12-28 2015-11-04 First Solar, Inc Procédé et appareil pour la formation d'une couche de tellurure de cadmium et de zinc dans un dispositif photovoltaïque
US20150207011A1 (en) * 2013-12-20 2015-07-23 Uriel Solar, Inc. Multi-junction photovoltaic cells and methods for forming the same
CN104064618A (zh) * 2014-05-16 2014-09-24 中国科学院电工研究所 一种p-i-n结构CdTe电池及其制备方法
CN104746143A (zh) * 2015-03-05 2015-07-01 中国电子科技集团公司第十一研究所 一种硅基碲化锌缓冲层分子束外延工艺方法
US9287439B1 (en) * 2015-04-16 2016-03-15 China Triumph International Engineering Co., Ltd. Method of conditioning the CdTe layer of CdTe thin-film solar cells
CN106206244A (zh) * 2015-04-29 2016-12-07 中国建材国际工程集团有限公司 对CdTe薄层太阳能电池的CdTe层进行调理的方法
CN106057931B (zh) * 2016-07-05 2023-07-07 安阳师范学院 一种大开路电压纳米异质结太阳能电池及制备方法
US20190296174A1 (en) * 2016-10-12 2019-09-26 First Solar, Inc. Photovoltaic device with transparent tunnel junction
MY192457A (en) * 2017-02-27 2022-08-22 First Solar Inc Thin film stacks for group v doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
CN108933172B (zh) * 2017-05-24 2020-05-15 清华大学 半导体元件
CN108963003B (zh) * 2017-05-24 2020-06-09 清华大学 太阳能电池
CN114388656B (zh) * 2021-12-29 2024-04-26 中国建材国际工程集团有限公司 一种CdTe发电玻璃及其制造方法

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
WO1981002948A1 (fr) * 1980-04-10 1981-10-15 Massachusetts Inst Technology Procede de production de feuilles d'un materiau cristallin et dispositifs fabriques a partir de ces feuilles
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
US4680422A (en) * 1985-10-30 1987-07-14 The Boeing Company Two-terminal, thin film, tandem solar cells
US4706604A (en) * 1986-06-09 1987-11-17 Honeywell Inc. Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
DE68923061T2 (de) * 1988-11-16 1995-11-09 Mitsubishi Electric Corp Sonnenzelle.
US5028561A (en) * 1989-06-15 1991-07-02 Hughes Aircraft Company Method of growing p-type group II-VI material
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5477809A (en) * 1993-06-23 1995-12-26 Nec Corporation Method of growth of CdTe on silicon by molecular beam epitaxy
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
JPH07147422A (ja) * 1993-11-26 1995-06-06 Sumitomo Metal Mining Co Ltd テルル化カドミウム太陽電池
JP3271225B2 (ja) * 1994-05-31 2002-04-02 ソニー株式会社 Ｉｉ−ｖｉ族化合物半導体の成長方法
JPH08107068A (ja) * 1994-10-03 1996-04-23 Nec Corp ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法
JPH0997803A (ja) * 1995-09-29 1997-04-08 Sony Corp カドミウムを含むｉｉ−ｖｉ族化合物半導体層およびその成長方法
JPH09237907A (ja) * 1996-02-28 1997-09-09 Nippon Telegr & Teleph Corp <Ntt> 太陽光発電装置
JPH10303445A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の製造方法とそれを用いた太陽電池
EP0841707A3 (fr) * 1996-11-11 2000-05-03 Sony Corporation Dispositif semi-conducteur émetteur de lumière, méthode de fabrication et appareil d'enregistrement et de lecture optique
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
US6255708B1 (en) * 1997-10-10 2001-07-03 Rengarajan Sudharsanan Semiconductor P-I-N detector
JPH11204834A (ja) * 1997-11-14 1999-07-30 Sony Corp 半導体発光素子の製造方法
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US7442953B2 (en) * 1999-06-14 2008-10-28 Quantum Semiconductor Llc Wavelength selective photonics device
EP1228537A1 (fr) * 1999-06-14 2002-08-07 AUGUSTO, Carlos Jorge Ramiro Proenca Composant optoelectronique presentant un empilement de couches et une caracteristique de selection de longueurs d'ondes
US6274804B1 (en) * 1999-07-28 2001-08-14 Angewandte Solarenergie - Ase Gmbh Thin-film solar module
US6852614B1 (en) * 2000-03-24 2005-02-08 University Of Maine Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
JP3717372B2 (ja) * 2000-05-15 2005-11-16 シャープ株式会社 太陽電池モジュール
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
US6657194B2 (en) * 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
JP4162447B2 (ja) * 2001-09-28 2008-10-08 三洋電機株式会社 光起電力素子及び光起電力装置
US6759312B2 (en) * 2001-10-16 2004-07-06 The Regents Of The University Of California Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors
JP4074763B2 (ja) * 2002-01-22 2008-04-09 シャープ株式会社 太陽電池の製造方法
US7141863B1 (en) * 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
AU2003297649A1 (en) * 2002-12-05 2004-06-30 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
WO2005006393A2 (fr) * 2003-05-27 2005-01-20 Triton Systems, Inc. Films isolants non poreux sans piqures sur substrats metalliques souples pour applications a films minces
DE10326547A1 (de) * 2003-06-12 2005-01-05 Siemens Ag Tandemsolarzelle mit einer gemeinsamen organischen Elektrode
WO2005083799A1 (fr) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Procede de fabrication de piles photovoltaiques
US7518207B1 (en) * 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
WO2006015185A2 (fr) * 2004-07-30 2006-02-09 Aonex Technologies, Inc. Cellule solaire a triple jonction gainp/gaas/si obtenue par liaison de tranches et transfert de couches
US8115093B2 (en) * 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US20070277875A1 (en) * 2006-05-31 2007-12-06 Kishor Purushottam Gadkaree Thin film photovoltaic structure
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
US20090173373A1 (en) * 2008-01-07 2009-07-09 Wladyslaw Walukiewicz Group III-Nitride Solar Cell with Graded Compositions
EP2268855A1 (fr) * 2008-03-18 2011-01-05 Solexant Corp. Contact repos amélioré dans des photopiles minces
CN101276854B (zh) * 2008-05-09 2010-06-09 上海太阳能电池研究与发展中心 碲锌镉薄膜太阳能电池
US8093094B2 (en) * 2008-06-12 2012-01-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Blocking contacts for N-type cadmium zinc telluride
US8298856B2 (en) * 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells

Also Published As

Publication number Publication date
JP5813654B2 (ja) 2015-11-17
BR112012012383A2 (pt) 2019-09-24
EP2481094A4 (fr) 2017-08-09
EP2481094A2 (fr) 2012-08-01
US20110139249A1 (en) 2011-06-16
JP2013513953A (ja) 2013-04-22
CA2780175A1 (fr) 2011-06-16
WO2011072269A3 (fr) 2011-11-17
CN102714252A (zh) 2012-10-03
WO2011072269A2 (fr) 2011-06-16

Similar Documents

Publication Publication Date Title
IN2012DN03272A (fr)
WO2010009436A3 (fr) Structures de cellule photovoltaïque à semi-conducteurs de film mince de tellure de cadmium (cdte) polycristallin, à grand substrat et à grande efficacité énergétique, mises à croître par épitaxie de faisceau moléculaire à une vitesse de dépôt élevée, devant être utilisées dans la production d&#39;électricité solaire
MY173413A (en) High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
EP2510551A4 (fr) Structures de cellule solaire à contact arrière photovoltaïque de rendement élevé et procédés de fabrication utilisant des semi-conducteurs plans minces
WO2010120233A3 (fr) Cellule photovoltaïque multi-jonction avec nanofils
WO2011112765A3 (fr) Systèmes et procédés d&#39;interconnexion de cellules solaires flexibles
WO2009091773A3 (fr) Concentrateur et dispositifs solaires ainsi que procédés les utilisant
WO2010093695A3 (fr) Système d&#39;alimentation photovoltaïque à film mince comportant un onduleur très efficace et peu encombrant
GB201211038D0 (en) Solar cells
WO2010048543A3 (fr) Couche mince d&#39;absorbeur d&#39;un dispositif photovoltaïque
WO2011143222A3 (fr) Panneau solaire à film mince et double face et procédés de production associés
WO2012177804A3 (fr) Dispositifs en cdte améliorés et leur procédé de fabrication
GB201205738D0 (en) Photovoltaic thermal hybrid solar receivers
WO2012075482A3 (fr) Procédé et appareil permettant d&#39;appliquer un champ électrique à un élément photovoltaïque
WO2013070454A3 (fr) Appareil et procédés d&#39;amélioration de rendement photovoltaïque
WO2012030701A3 (fr) Dispositif d&#39;interconnexion de dispositifs photovoltaïques
GB201008697D0 (en) Photovoltaic modules
EP3770973A4 (fr) Cellule solaire, cellule solaire multijonction, module solaire et système de production d&#39;énergie solaire photovoltaïque
WO2011022687A3 (fr) Dispositifs photovoltaïques à hétérojonction traités au laser et procédés associés
WO2012006130A3 (fr) Empilement à contact arrière multicouche de hautes performances pour cellules solaires au silicium
WO2012009010A3 (fr) Dispositif de stockage d&#39;énergie à grande séparation de charges
EP3355364A4 (fr) Cellule solaire à efficacité de conversion photoélectrique élevée, son procédé de fabrication, module de cellules solaires et système de génération d&#39;énergie solaire
WO2012166749A3 (fr) Implantation d&#39;ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière
GB201304484D0 (en) Silicon wafer coated with a passivation layer
WO2011011301A3 (fr) Film à phase de silicium mixte pour cellules solaires en silicium à films minces à haut rendement