IN2012DN03272A - - Google Patents
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- Publication number
- IN2012DN03272A IN2012DN03272A IN3272DEN2012A IN2012DN03272A IN 2012DN03272 A IN2012DN03272 A IN 2012DN03272A IN 3272DEN2012 A IN3272DEN2012 A IN 3272DEN2012A IN 2012DN03272 A IN2012DN03272 A IN 2012DN03272A
- Authority
- IN
- India
- Prior art keywords
- solar cell
- junction
- reverse
- mbe
- intrinsic
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 2
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/0248—Tellurides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28553109P | 2009-12-10 | 2009-12-10 | |
PCT/US2010/059969 WO2011072269A2 (en) | 2009-12-10 | 2010-12-10 | HIGH POWER EFFICIENCY POLYCRYSTALLINE CdTe THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES FOR USE IN SOLAR ELECTRICITY GENERATION |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN03272A true IN2012DN03272A (es) | 2015-10-23 |
Family
ID=44141563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3272DEN2012 IN2012DN03272A (es) | 2009-12-10 | 2010-12-10 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20110139249A1 (es) |
EP (1) | EP2481094A4 (es) |
JP (1) | JP5813654B2 (es) |
CN (1) | CN102714252A (es) |
BR (1) | BR112012012383A2 (es) |
CA (1) | CA2780175A1 (es) |
IN (1) | IN2012DN03272A (es) |
WO (1) | WO2011072269A2 (es) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8298856B2 (en) * | 2008-07-17 | 2012-10-30 | Uriel Solar, Inc. | Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation |
US20120192923A1 (en) * | 2011-02-01 | 2012-08-02 | General Electric Company | Photovoltaic device |
US9147793B2 (en) | 2011-06-20 | 2015-09-29 | Alliance For Sustainable Energy, Llc | CdTe devices and method of manufacturing same |
US20130180579A1 (en) * | 2012-01-17 | 2013-07-18 | First Solar, Inc | Photovoltaic device having an absorber multilayer and method of manufacturing the same |
US9324898B2 (en) | 2012-09-25 | 2016-04-26 | Alliance For Sustainable Energy, Llc | Varying cadmium telluride growth temperature during deposition to increase solar cell reliability |
US20140374266A1 (en) * | 2012-12-28 | 2014-12-25 | First Solar, Inc. | Method and apparatus for forming a cadmium zinc telluride layer in a photovoltaic device |
US20150207011A1 (en) * | 2013-12-20 | 2015-07-23 | Uriel Solar, Inc. | Multi-junction photovoltaic cells and methods for forming the same |
CN104064618A (zh) * | 2014-05-16 | 2014-09-24 | 中国科学院电工研究所 | 一种p-i-n结构CdTe电池及其制备方法 |
CN104746143A (zh) * | 2015-03-05 | 2015-07-01 | 中国电子科技集团公司第十一研究所 | 一种硅基碲化锌缓冲层分子束外延工艺方法 |
US9287439B1 (en) * | 2015-04-16 | 2016-03-15 | China Triumph International Engineering Co., Ltd. | Method of conditioning the CdTe layer of CdTe thin-film solar cells |
CN106206244A (zh) * | 2015-04-29 | 2016-12-07 | 中国建材国际工程集团有限公司 | 对CdTe薄层太阳能电池的CdTe层进行调理的方法 |
CN106057931B (zh) * | 2016-07-05 | 2023-07-07 | 安阳师范学院 | 一种大开路电压纳米异质结太阳能电池及制备方法 |
EP3526817B1 (en) * | 2016-10-12 | 2020-09-23 | First Solar, Inc | Photovoltaic device with transparent tunnel junction |
AU2018224308B2 (en) * | 2017-02-27 | 2019-11-14 | First Solar, Inc. | Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks |
CN108963003B (zh) * | 2017-05-24 | 2020-06-09 | 清华大学 | 太阳能电池 |
CN108933172B (zh) * | 2017-05-24 | 2020-05-15 | 清华大学 | 半导体元件 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
EP0193830A3 (en) * | 1980-04-10 | 1986-10-01 | Massachusetts Institute Of Technology | Solar cell device incorporating plural constituent solar cells |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
US4536607A (en) * | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
US4680422A (en) * | 1985-10-30 | 1987-07-14 | The Boeing Company | Two-terminal, thin film, tandem solar cells |
US4706604A (en) * | 1986-06-09 | 1987-11-17 | Honeywell Inc. | Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride |
US4977097A (en) * | 1986-10-21 | 1990-12-11 | Ametek, Inc. | Method of making heterojunction P-I-N photovoltaic cell |
US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
US4753684A (en) * | 1986-10-31 | 1988-06-28 | The Standard Oil Company | Photovoltaic heterojunction structures |
DE68923061T2 (de) * | 1988-11-16 | 1995-11-09 | Mitsubishi Electric Corp | Sonnenzelle. |
US5028561A (en) * | 1989-06-15 | 1991-07-02 | Hughes Aircraft Company | Method of growing p-type group II-VI material |
US4999694A (en) * | 1989-08-18 | 1991-03-12 | At&T Bell Laboratories | Photodiode |
US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
US5393675A (en) * | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
US5477809A (en) * | 1993-06-23 | 1995-12-26 | Nec Corporation | Method of growth of CdTe on silicon by molecular beam epitaxy |
US5738731A (en) * | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
JPH07147422A (ja) * | 1993-11-26 | 1995-06-06 | Sumitomo Metal Mining Co Ltd | テルル化カドミウム太陽電池 |
JP3271225B2 (ja) * | 1994-05-31 | 2002-04-02 | ソニー株式会社 | Ii−vi族化合物半導体の成長方法 |
JPH08107068A (ja) * | 1994-10-03 | 1996-04-23 | Nec Corp | MBE法によるSi基板上CdTe成長方法 |
JPH0997803A (ja) * | 1995-09-29 | 1997-04-08 | Sony Corp | カドミウムを含むii−vi族化合物半導体層およびその成長方法 |
JPH09237907A (ja) * | 1996-02-28 | 1997-09-09 | Nippon Telegr & Teleph Corp <Ntt> | 太陽光発電装置 |
JPH10303445A (ja) * | 1997-04-28 | 1998-11-13 | Matsushita Denchi Kogyo Kk | CdTe膜の製造方法とそれを用いた太陽電池 |
US5898662A (en) * | 1996-11-11 | 1999-04-27 | Sony Corporation | Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus |
US5909632A (en) * | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
US6255708B1 (en) * | 1997-10-10 | 2001-07-03 | Rengarajan Sudharsanan | Semiconductor P-I-N detector |
JPH11204834A (ja) * | 1997-11-14 | 1999-07-30 | Sony Corp | 半導体発光素子の製造方法 |
US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
US7442953B2 (en) * | 1999-06-14 | 2008-10-28 | Quantum Semiconductor Llc | Wavelength selective photonics device |
JP2003502847A (ja) * | 1999-06-14 | 2003-01-21 | アウグスト,カルロス・ジヨタ・エルリ・ペー | 積み重ね型波長選択オプトエレクトロニクス装置 |
US6274804B1 (en) * | 1999-07-28 | 2001-08-14 | Angewandte Solarenergie - Ase Gmbh | Thin-film solar module |
US6852614B1 (en) * | 2000-03-24 | 2005-02-08 | University Of Maine | Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen |
JP3717372B2 (ja) * | 2000-05-15 | 2005-11-16 | シャープ株式会社 | 太陽電池モジュール |
US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
US6657194B2 (en) * | 2001-04-13 | 2003-12-02 | Epir Technologies, Inc. | Multispectral monolithic infrared focal plane array detectors |
JP4162447B2 (ja) * | 2001-09-28 | 2008-10-08 | 三洋電機株式会社 | 光起電力素子及び光起電力装置 |
US6759312B2 (en) * | 2001-10-16 | 2004-07-06 | The Regents Of The University Of California | Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors |
JP4074763B2 (ja) * | 2002-01-22 | 2008-04-09 | シャープ株式会社 | 太陽電池の製造方法 |
US7141863B1 (en) * | 2002-11-27 | 2006-11-28 | University Of Toledo | Method of making diode structures |
AU2003297649A1 (en) * | 2002-12-05 | 2004-06-30 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
WO2005006393A2 (en) * | 2003-05-27 | 2005-01-20 | Triton Systems, Inc. | Pinhold porosity free insulating films on flexible metallic substrates for thin film applications |
DE10326547A1 (de) * | 2003-06-12 | 2005-01-05 | Siemens Ag | Tandemsolarzelle mit einer gemeinsamen organischen Elektrode |
EP1730788A1 (en) * | 2004-02-24 | 2006-12-13 | BP Corporation North America Inc. | Process for manufacturing photovoltaic cells |
US7518207B1 (en) * | 2004-03-19 | 2009-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films |
US20060021565A1 (en) * | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
US8115093B2 (en) * | 2005-02-15 | 2012-02-14 | General Electric Company | Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same |
US20070277874A1 (en) * | 2006-05-31 | 2007-12-06 | David Francis Dawson-Elli | Thin film photovoltaic structure |
US20070277875A1 (en) * | 2006-05-31 | 2007-12-06 | Kishor Purushottam Gadkaree | Thin film photovoltaic structure |
US20080023059A1 (en) * | 2006-07-25 | 2008-01-31 | Basol Bulent M | Tandem solar cell structures and methods of manufacturing same |
CN101772845B (zh) * | 2007-09-25 | 2012-05-23 | 第一太阳能有限公司 | 包括异质结的光伏装置 |
US20090173373A1 (en) * | 2008-01-07 | 2009-07-09 | Wladyslaw Walukiewicz | Group III-Nitride Solar Cell with Graded Compositions |
JP2011515852A (ja) * | 2008-03-18 | 2011-05-19 | ソレクサント・コーポレイション | 薄膜太陽電池の改善されたバックコンタクト |
CN101276854B (zh) * | 2008-05-09 | 2010-06-09 | 上海太阳能电池研究与发展中心 | 碲锌镉薄膜太阳能电池 |
US8093094B2 (en) * | 2008-06-12 | 2012-01-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Blocking contacts for N-type cadmium zinc telluride |
US8298856B2 (en) * | 2008-07-17 | 2012-10-30 | Uriel Solar, Inc. | Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation |
US8912428B2 (en) * | 2008-10-22 | 2014-12-16 | Epir Technologies, Inc. | High efficiency multijunction II-VI photovoltaic solar cells |
-
2010
- 2010-12-10 US US12/965,800 patent/US20110139249A1/en not_active Abandoned
- 2010-12-10 BR BR112012012383A patent/BR112012012383A2/pt not_active IP Right Cessation
- 2010-12-10 CA CA2780175A patent/CA2780175A1/en not_active Abandoned
- 2010-12-10 CN CN2010800542274A patent/CN102714252A/zh active Pending
- 2010-12-10 IN IN3272DEN2012 patent/IN2012DN03272A/en unknown
- 2010-12-10 WO PCT/US2010/059969 patent/WO2011072269A2/en active Application Filing
- 2010-12-10 EP EP10836784.8A patent/EP2481094A4/en not_active Withdrawn
- 2010-12-10 JP JP2012543323A patent/JP5813654B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2481094A4 (en) | 2017-08-09 |
CA2780175A1 (en) | 2011-06-16 |
WO2011072269A3 (en) | 2011-11-17 |
BR112012012383A2 (pt) | 2019-09-24 |
JP5813654B2 (ja) | 2015-11-17 |
CN102714252A (zh) | 2012-10-03 |
EP2481094A2 (en) | 2012-08-01 |
US20110139249A1 (en) | 2011-06-16 |
WO2011072269A2 (en) | 2011-06-16 |
JP2013513953A (ja) | 2013-04-22 |
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