IN2012DN00356A - - Google Patents

Download PDF

Info

Publication number
IN2012DN00356A
IN2012DN00356A IN356DEN2012A IN2012DN00356A IN 2012DN00356 A IN2012DN00356 A IN 2012DN00356A IN 356DEN2012 A IN356DEN2012 A IN 356DEN2012A IN 2012DN00356 A IN2012DN00356 A IN 2012DN00356A
Authority
IN
India
Prior art keywords
cdte
kinds
efficiency
improve
front contact
Prior art date
Application number
Other languages
English (en)
Inventor
Shao Rui
gloeckler Markus
Buller Benyamin
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of IN2012DN00356A publication Critical patent/IN2012DN00356A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
IN356DEN2012 2009-07-13 2010-07-09 IN2012DN00356A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22494109P 2009-07-13 2009-07-13
PCT/US2010/001942 WO2011008254A1 (en) 2009-07-13 2010-07-09 Solar cell front contact doping

Publications (1)

Publication Number Publication Date
IN2012DN00356A true IN2012DN00356A (enrdf_load_stackoverflow) 2015-08-21

Family

ID=43426537

Family Applications (1)

Application Number Title Priority Date Filing Date
IN356DEN2012 IN2012DN00356A (enrdf_load_stackoverflow) 2009-07-13 2010-07-09

Country Status (8)

Country Link
US (2) US9153730B2 (enrdf_load_stackoverflow)
EP (1) EP2454755A4 (enrdf_load_stackoverflow)
JP (1) JP5878465B2 (enrdf_load_stackoverflow)
KR (1) KR20120052310A (enrdf_load_stackoverflow)
CN (1) CN102625953B (enrdf_load_stackoverflow)
IN (1) IN2012DN00356A (enrdf_load_stackoverflow)
TW (1) TWI545785B (enrdf_load_stackoverflow)
WO (1) WO2011008254A1 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY164919A (en) 2009-09-11 2018-02-15 First Solar Inc Photovoltaic back contact
CN105914241B (zh) 2010-09-22 2018-07-24 第一太阳能有限公司 光伏装置和形成光伏装置的方法
CN103283031B (zh) 2010-09-22 2016-08-17 第一太阳能有限公司 包含n型掺杂剂源的光伏装置
US9496426B2 (en) 2012-02-10 2016-11-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
US9054245B2 (en) * 2012-03-02 2015-06-09 First Solar, Inc. Doping an absorber layer of a photovoltaic device via diffusion from a window layer
US9565213B2 (en) * 2012-10-22 2017-02-07 Centripetal Networks, Inc. Methods and systems for protecting a secured network
WO2014077895A1 (en) 2012-11-19 2014-05-22 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers
TWI584162B (zh) * 2012-11-26 2017-05-21 揚昇照明股份有限公司 觸控裝置的製造方法
US9520530B2 (en) * 2014-10-03 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Solar cell having doped buffer layer and method of fabricating the solar cell
US10496989B2 (en) * 2016-02-22 2019-12-03 Bank Of America Corporation System to enable contactless access to a transaction terminal using a process data network
CN107123693B (zh) * 2017-04-14 2020-05-22 华南理工大学 一种基于溶液法加工的具有高透明窗口层材料的高效CdTe纳米晶太阳电池及其制备方法
KR102612801B1 (ko) * 2018-07-02 2023-12-12 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 광 전자 소자, 이를 이용한 평면 디스플레이 및 광 전자 소자 제조 방법
CN113261116B (zh) 2018-10-24 2024-10-11 第一阳光公司 具有v族掺杂的光伏器件用缓冲层
US11515147B2 (en) * 2019-12-09 2022-11-29 Micron Technology, Inc. Material deposition systems, and related methods

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
DE4132882C2 (de) 1991-10-03 1996-05-09 Antec Angewandte Neue Technolo Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen
JP3606886B2 (ja) * 1993-02-04 2005-01-05 松下電器産業株式会社 太陽電池及びその製造方法
JP3497249B2 (ja) * 1994-09-16 2004-02-16 松下電池工業株式会社 太陽電池の製造法
JPH0974210A (ja) * 1995-09-04 1997-03-18 Japan Energy Corp 太陽電池の製造方法
US5916375A (en) * 1995-12-07 1999-06-29 Japan Energy Corporation Method of producing photoelectric conversion device
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US6221495B1 (en) * 1996-11-07 2001-04-24 Midwest Research Institute Thin transparent conducting films of cadmium stannate
US7211462B2 (en) 2001-10-05 2007-05-01 Solar Systems & Equipments S.R.L. Process for large-scale production of CdTe/CdS thin film solar cells
CN100459174C (zh) * 2004-01-13 2009-02-04 松下电器产业株式会社 太阳电池及其制造方法
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
GB0608987D0 (en) * 2006-05-08 2006-06-14 Univ Wales Bangor Manufacture of CdTe photovoltaic cells using MOCVD
JP2008088382A (ja) 2006-10-05 2008-04-17 Mitsubishi Rayon Co Ltd 硬化性組成物、その硬化物および光情報媒体
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US20080105298A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
KR20090006755A (ko) * 2007-07-12 2009-01-15 어플라이드 머티어리얼스, 인코포레이티드 투명 전도성 산화물 코팅의 제조 방법
US20090014065A1 (en) * 2007-07-12 2009-01-15 Applied Materials, Inc. Method for the production of a transparent conductive oxide coating
US20090020149A1 (en) * 2007-07-16 2009-01-22 Woods Lawrence M Hybrid Multi-Junction Photovoltaic Cells And Associated Methods
JP4783908B2 (ja) * 2007-07-18 2011-09-28 株式会社豊田中央研究所 光電素子
JP2009074210A (ja) 2007-09-21 2009-04-09 Mitsuboshi Belting Ltd ベルト用コードの接着処理方法
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
ITMI20071907A1 (it) * 2007-10-04 2009-04-05 Petr Nozar Processo per la preparazione di una cella solare.
KR101614554B1 (ko) * 2007-11-02 2016-04-21 퍼스트 솔라, 인코포레이티드 도핑된 반도체 막을 포함하는 광기전 장치
CN201156545Y (zh) * 2008-01-07 2008-11-26 四川大学 一种锑化铝透明薄膜太阳电池
JP2011515867A (ja) * 2008-03-26 2011-05-19 ソレクサント・コーポレイション サブストレート構造太陽電池の改良された接続
US8802977B2 (en) * 2008-05-09 2014-08-12 International Business Machines Corporation Techniques for enhancing performance of photovoltaic devices
CN101276854B (zh) * 2008-05-09 2010-06-09 上海太阳能电池研究与发展中心 碲锌镉薄膜太阳能电池
KR20090131841A (ko) * 2008-06-19 2009-12-30 삼성전자주식회사 광전 소자
WO2010009436A2 (en) * 2008-07-17 2010-01-21 Uriel Solar Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US20100051105A1 (en) * 2008-08-26 2010-03-04 Mustafa Pinarbasi Flexible substrate for ii-vi compound solar cells
US8541792B2 (en) * 2010-10-15 2013-09-24 Guardian Industries Corp. Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same

Also Published As

Publication number Publication date
CN102625953A (zh) 2012-08-01
US9153730B2 (en) 2015-10-06
KR20120052310A (ko) 2012-05-23
CN102625953B (zh) 2016-02-03
JP5878465B2 (ja) 2016-03-08
TWI545785B (zh) 2016-08-11
TW201115753A (en) 2011-05-01
EP2454755A1 (en) 2012-05-23
WO2011008254A1 (en) 2011-01-20
US20150380600A1 (en) 2015-12-31
EP2454755A4 (en) 2016-03-30
JP2012533187A (ja) 2012-12-20
US20110005591A1 (en) 2011-01-13

Similar Documents

Publication Publication Date Title
IN2012DN00356A (enrdf_load_stackoverflow)
MX2012002156A (es) Oxido conductor transparente impurificado.
MX2011008581A (es) Salida de planta de energia fotovoltaica.
GB2466342B (en) Photovoltaic solar cells
MY173413A (en) High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
WO2012134807A3 (en) Graphene-based multi-junctions flexible solar cell
MY157221A (en) Photovoltaic devices including an interfacial layer
FR2919758B1 (fr) Systeme de groupement de cellules solaires photovoltaiques a concentrateurs.
EP2409331A4 (en) Advanced high efficiency crystalline solar cell fabrication method
MY177448A (en) Transparent conductive materials including cadmium stannate
WO2012102540A3 (ko) 광전지 모듈
WO2012166974A3 (en) Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
WO2010085561A3 (en) Materials for solar concentrators and devices, methods and systems using them
IL210885A0 (en) Photovoltaic solar power generation system
ZA201204008B (en) Rear-contact heterojunction photovoltaic cell
SI2396607T1 (sl) Solarni kolektor in elektrarna s tovrstnim solarnim kolektorjem
WO2012100788A8 (en) Photovoltaic concentrator receiver and its use
WO2011074784A3 (en) Cu-in-zn-sn-(se,s)-based thin film for solar cell and preparation method thereof
EP2413379A4 (en) Wiring-sheet-attached solar battery cell, solar cell module, and process for manufacturing wiring-sheet-attached solar battery cell
GB0700071D0 (en) Multijunction solar cell
GB201008697D0 (en) Photovoltaic modules
EP2430648A4 (en) PHOTOVOLTAIC DEVICE
ZA201202551B (en) High-concentration photovoltaic solar module
WO2012162268A3 (en) Self-activated front surface bias for a solar cell
GB201304484D0 (en) Silicon wafer coated with a passivation layer