IN192584B - - Google Patents

Info

Publication number
IN192584B
IN192584B IN1666CA1998A IN192584B IN 192584 B IN192584 B IN 192584B IN 1666CA1998 A IN1666CA1998 A IN 1666CA1998A IN 192584 B IN192584 B IN 192584B
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Bruce Kane
Original Assignee
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd filed Critical Unisearch Ltd
Publication of IN192584B publication Critical patent/IN192584B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/7613Single electron transistors; Coulomb blockade devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/775Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933Spintronics or quantum computing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Mathematical Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IN1666CA1998 1997-09-17 1998-09-17 IN192584B (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPO9268A AUPO926897A0 (en) 1997-09-17 1997-09-17 Quantum computer

Publications (1)

Publication Number Publication Date
IN192584B true IN192584B (pt) 2004-05-08

Family

ID=3803551

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1666CA1998 IN192584B (pt) 1997-09-17 1998-09-17

Country Status (12)

Country Link
US (2) US6369404B1 (pt)
EP (2) EP1025449A4 (pt)
JP (2) JP4819993B2 (pt)
KR (2) KR20010030601A (pt)
CN (2) CN1135700C (pt)
AU (1) AUPO926897A0 (pt)
CA (2) CA2304185A1 (pt)
IL (2) IL135062A0 (pt)
IN (1) IN192584B (pt)
TW (2) TW423046B (pt)
WO (2) WO1999014614A1 (pt)
ZA (2) ZA988528B (pt)

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US7097708B2 (en) * 2001-08-27 2006-08-29 Qucor Pty Ltd. Substituted donor atoms in silicon crystal for quantum computer
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US20090182542A9 (en) * 2001-12-22 2009-07-16 Hilton Jeremy P Hybrid classical-quantum computer architecture for molecular modeling
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CN1647405A (zh) * 2002-04-23 2005-07-27 D·基尔班克 在通信中使用微单元的系统和方法
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US7408486B2 (en) * 2003-04-21 2008-08-05 Qbit Corporation System and method for using a microlet-based modem
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US7216038B2 (en) * 2003-09-11 2007-05-08 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7219018B2 (en) * 2003-09-11 2007-05-15 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
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WO2005124674A1 (en) * 2004-06-15 2005-12-29 National Research Council Of Canada Voltage-controlled computing element for quantum computer
US20060007025A1 (en) * 2004-07-08 2006-01-12 Manish Sharma Device and method for encoding data, and a device and method for decoding data
JP2006261610A (ja) * 2005-03-18 2006-09-28 Hokkaido Univ 核スピンメモリセルおよび情報処理回路
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CN102530856B (zh) * 2006-12-20 2016-12-14 复旦大学附属中山医院 氧化还原纳米药物量子点构成室温超导量子比特网络的方法
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US11235062B2 (en) * 2009-03-06 2022-02-01 Metaqor Llc Dynamic bio-nanoparticle elements
US11096901B2 (en) 2009-03-06 2021-08-24 Metaqor Llc Dynamic bio-nanoparticle platforms
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US8816325B2 (en) * 2011-10-07 2014-08-26 The Regents Of The University Of California Scalable quantum computer architecture with coupled donor-quantum dot qubits
CN102779288B (zh) * 2012-06-26 2015-09-30 中国矿业大学 一种基于场理论的本体分析方法
CN103512653B (zh) * 2012-06-29 2016-12-21 新昌县冠阳技术开发有限公司 一种可测量反射光的光自旋霍尔效应的装置
WO2014026222A1 (en) * 2012-08-13 2014-02-20 Newsouth Innovations Pty Limited Quantum logic
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WO2015103375A1 (en) * 2014-01-06 2015-07-09 Google Inc. Constructing and programming quantum hardware for quantum annealing processes
WO2015118579A1 (ja) * 2014-02-10 2015-08-13 独立行政法人理化学研究所 スキルミオンの駆動方法
CN106170802A (zh) * 2014-03-12 2016-11-30 时空防御系统有限责任公司 通过绝热量子计算解决数字逻辑约束问题
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CN108698815B (zh) * 2016-01-15 2022-04-08 耶鲁大学 用于操纵双量子位量子态的技术及相关系统和方法
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Also Published As

Publication number Publication date
EP1025449A4 (en) 2003-04-02
IL134920A0 (en) 2001-05-20
IL135062A0 (en) 2001-05-20
CA2304185A1 (en) 1999-03-25
KR20010030601A (ko) 2001-04-16
JP2001516962A (ja) 2001-10-02
ZA988528B (en) 1999-03-18
CN1270674A (zh) 2000-10-18
TW423046B (en) 2001-02-21
JP4819994B2 (ja) 2011-11-24
WO1999014858A1 (en) 1999-03-25
TW423028B (en) 2001-02-21
JP2001516974A (ja) 2001-10-02
IL134920A (en) 2003-11-23
AUPO926897A0 (en) 1997-10-09
CN1135700C (zh) 2004-01-21
JP4819993B2 (ja) 2011-11-24
CN1132016C (zh) 2003-12-24
US6472681B1 (en) 2002-10-29
EP1016216A4 (en) 2002-05-08
EP1016216A1 (en) 2000-07-05
US6369404B1 (en) 2002-04-09
ZA988530B (en) 1999-03-18
WO1999014614A1 (en) 1999-03-25
KR20010030600A (ko) 2001-04-16
CN1278967A (zh) 2001-01-03
CA2304045A1 (en) 1999-03-25
EP1025449A1 (en) 2000-08-09

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