IL86162A - Customizable semiconductor devices - Google Patents

Customizable semiconductor devices

Info

Publication number
IL86162A
IL86162A IL86162A IL8616288A IL86162A IL 86162 A IL86162 A IL 86162A IL 86162 A IL86162 A IL 86162A IL 8616288 A IL8616288 A IL 8616288A IL 86162 A IL86162 A IL 86162A
Authority
IL
Israel
Prior art keywords
semiconductor devices
customizable semiconductor
customizable
devices
semiconductor
Prior art date
Application number
IL86162A
Other languages
English (en)
Other versions
IL86162A0 (en
Original Assignee
Zvi Orbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zvi Orbach filed Critical Zvi Orbach
Priority to IL86162A priority Critical patent/IL86162A/xx
Priority to US07/222,514 priority patent/US4933738A/en
Publication of IL86162A0 publication Critical patent/IL86162A0/xx
Priority to EP19890107334 priority patent/EP0339534A3/de
Priority to EP00102618A priority patent/EP1011145A3/de
Priority to JP1105735A priority patent/JP2944100B2/ja
Priority to US07/344,582 priority patent/US5049969A/en
Publication of IL86162A publication Critical patent/IL86162A/xx
Priority to US08/081,553 priority patent/US5545904A/en
Priority to US08/404,042 priority patent/US5619062A/en
Priority to US08/407,412 priority patent/US5679967A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • H01L27/11807CMOS gate arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
IL86162A 1985-01-20 1988-04-25 Customizable semiconductor devices IL86162A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
IL86162A IL86162A (en) 1988-04-25 1988-04-25 Customizable semiconductor devices
US07/222,514 US4933738A (en) 1988-04-25 1988-07-21 Customizable semiconductor devices
EP19890107334 EP0339534A3 (de) 1988-04-25 1989-04-24 Abänderungsfähige Halbleiteranordnungen
EP00102618A EP1011145A3 (de) 1988-04-25 1989-04-24 Abänderungsfähige Halbleiteranordnungen
JP1105735A JP2944100B2 (ja) 1988-04-25 1989-04-25 カスタマ化半導体デバイス
US07/344,582 US5049969A (en) 1988-04-25 1989-04-28 Customizable semiconductor devices
US08/081,553 US5545904A (en) 1986-01-17 1993-06-23 Personalizable gate array devices
US08/404,042 US5619062A (en) 1985-01-20 1995-03-14 Personalizable gate array devices
US08/407,412 US5679967A (en) 1985-01-20 1995-03-17 Customizable three metal layer gate array devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL86162A IL86162A (en) 1988-04-25 1988-04-25 Customizable semiconductor devices

Publications (2)

Publication Number Publication Date
IL86162A0 IL86162A0 (en) 1988-11-15
IL86162A true IL86162A (en) 1991-11-21

Family

ID=11058767

Family Applications (1)

Application Number Title Priority Date Filing Date
IL86162A IL86162A (en) 1985-01-20 1988-04-25 Customizable semiconductor devices

Country Status (3)

Country Link
US (2) US4933738A (de)
EP (1) EP1011145A3 (de)
IL (1) IL86162A (de)

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US5073814A (en) * 1990-07-02 1991-12-17 General Electric Company Multi-sublayer dielectric layers
US5096850A (en) * 1991-04-23 1992-03-17 Harris Corporation Method of laser trimming
JP3030991B2 (ja) * 1991-11-14 2000-04-10 日本電気株式会社 半導体集積回路
US5294846A (en) * 1992-08-17 1994-03-15 Paivinen John O Method and apparatus for programming anti-fuse devices
US5404033A (en) * 1992-08-20 1995-04-04 Swift Microelectronics Corporation Application specific integrated circuit and placement and routing software with non-customizable first metal layer and vias and customizable second metal grid pattern
US5541814A (en) * 1993-10-08 1996-07-30 Quick Technologies Ltd. Personalizable multi-chip carrier including removable fuses
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5572409A (en) * 1994-02-08 1996-11-05 Prolinx Labs Corporation Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board
US5917229A (en) * 1994-02-08 1999-06-29 Prolinx Labs Corporation Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect
US5813881A (en) * 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
US5808351A (en) * 1994-02-08 1998-09-15 Prolinx Labs Corporation Programmable/reprogramable structure using fuses and antifuses
US5726482A (en) * 1994-02-08 1998-03-10 Prolinx Labs Corporation Device-under-test card for a burn-in board
IL109491A (en) * 1994-05-01 1999-11-30 Quick Tech Ltd Customizable logic array device
US5424655A (en) * 1994-05-20 1995-06-13 Quicklogic Corporation Programmable application specific integrated circuit employing antifuses and methods therefor
US5444287A (en) * 1994-08-10 1995-08-22 International Business Machines Corporation Thermally activated noise immune fuse
US5742099A (en) * 1994-09-29 1998-04-21 Intel Corporation Power bus for an integrated circuit including end-to-end arranged segments providing power and ground
IL111708A (en) * 1994-11-21 1998-03-10 Chip Express Israel Ltd Array mapping goes
US5552720A (en) * 1994-12-01 1996-09-03 Quicklogic Corporation Method for simultaneous programming of multiple antifuses
US5495181A (en) * 1994-12-01 1996-02-27 Quicklogic Corporation Integrated circuit facilitating simultaneous programming of multiple antifuses
US5962815A (en) * 1995-01-18 1999-10-05 Prolinx Labs Corporation Antifuse interconnect between two conducting layers of a printed circuit board
US6258633B1 (en) 1995-02-16 2001-07-10 University Of South Florida Laser-programmable interconnect process for integrated circuit chips
US5661330A (en) * 1995-03-14 1997-08-26 International Business Machines Corporation Fabrication, testing and repair of multichip semiconductor structures having connect assemblies with fuses
US5552607A (en) * 1995-06-21 1996-09-03 General Electric Company Imager device with integral address line repair segments
US5981384A (en) * 1995-08-14 1999-11-09 Micron Technology, Inc. Method of intermetal dielectric planarization by metal features layout modification
US5906042A (en) * 1995-10-04 1999-05-25 Prolinx Labs Corporation Method and structure to interconnect traces of two conductive layers in a printed circuit board
US5767575A (en) * 1995-10-17 1998-06-16 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US5872338A (en) * 1996-04-10 1999-02-16 Prolinx Labs Corporation Multilayer board having insulating isolation rings
US5895942A (en) * 1996-06-18 1999-04-20 Kabushiki Kaisha Toshiba Fuse selectable modules
US5818730A (en) * 1996-12-05 1998-10-06 Xilinx, Inc. FPGA one turn routing structure and method using minimum diffusion area
US6242767B1 (en) 1997-11-10 2001-06-05 Lightspeed Semiconductor Corp. Asic routing architecture
JP2002515641A (ja) * 1998-01-28 2002-05-28 シン フイルム エレクトロニクス エイエスエイ 三次元の導電性または半導電性構造体を生成する方法およびこの構造体を消去する方法
US6034427A (en) * 1998-01-28 2000-03-07 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US6104082A (en) * 1998-04-24 2000-08-15 International Business Machines Corporation Metallization structure for altering connections
US6194912B1 (en) 1999-03-11 2001-02-27 Easic Corporation Integrated circuit device
US6331733B1 (en) 1999-08-10 2001-12-18 Easic Corporation Semiconductor device
US6236229B1 (en) 1999-05-13 2001-05-22 Easic Corporation Integrated circuits which employ look up tables to provide highly efficient logic cells and logic functionalities
US6245634B1 (en) 1999-10-28 2001-06-12 Easic Corporation Method for design and manufacture of semiconductors
US6225652B1 (en) * 1999-08-02 2001-05-01 Clear Logic, Inc. Vertical laser fuse structure allowing increased packing density
JP4008629B2 (ja) * 1999-09-10 2007-11-14 株式会社東芝 半導体装置、その設計方法、及びその設計プログラムを格納したコンピュータ読み取り可能な記録媒体
US6756811B2 (en) * 2000-03-10 2004-06-29 Easic Corporation Customizable and programmable cell array
US6331790B1 (en) 2000-03-10 2001-12-18 Easic Corporation Customizable and programmable cell array
US6459136B1 (en) * 2000-11-07 2002-10-01 Chip Express (Israel) Ltd. Single metal programmability in a customizable integrated circuit device
US6613611B1 (en) 2000-12-22 2003-09-02 Lightspeed Semiconductor Corporation ASIC routing architecture with variable number of custom masks
US6885043B2 (en) * 2002-01-18 2005-04-26 Lightspeed Semiconductor Corporation ASIC routing architecture
US7663204B2 (en) * 2007-04-27 2010-02-16 Powertech Technology Inc. Substrate for multi-chip stacking, multi-chip stack package utilizing the substrate and its applications
US8198188B1 (en) * 2008-01-28 2012-06-12 Cadence Design Systems, Inc. Self-aligned VIAS for semiconductor devices
KR101043841B1 (ko) * 2008-10-14 2011-06-22 주식회사 하이닉스반도체 반도체 메모리 장치의 퓨즈
US8159268B1 (en) 2010-11-16 2012-04-17 Raminda Udaya Madurawe Interconnect structures for metal configurable integrated circuits
US8159266B1 (en) 2010-11-16 2012-04-17 Raminda Udaya Madurawe Metal configurable integrated circuits
US8159265B1 (en) 2010-11-16 2012-04-17 Raminda Udaya Madurawe Memory for metal configurable integrated circuits

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Also Published As

Publication number Publication date
US4933738A (en) 1990-06-12
EP1011145A3 (de) 2000-12-20
EP1011145A2 (de) 2000-06-21
IL86162A0 (en) 1988-11-15
US5049969A (en) 1991-09-17

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