IL164439A0 - Silicon parts for plasma reaction chambers - Google Patents

Silicon parts for plasma reaction chambers

Info

Publication number
IL164439A0
IL164439A0 IL16443903A IL16443903A IL164439A0 IL 164439 A0 IL164439 A0 IL 164439A0 IL 16443903 A IL16443903 A IL 16443903A IL 16443903 A IL16443903 A IL 16443903A IL 164439 A0 IL164439 A0 IL 164439A0
Authority
IL
Israel
Prior art keywords
silicon parts
silicon
reaction chambers
plasma reaction
parts
Prior art date
Application number
IL16443903A
Other languages
English (en)
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/247,722 external-priority patent/US6846726B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL164439A0 publication Critical patent/IL164439A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
IL16443903A 2002-04-17 2003-03-21 Silicon parts for plasma reaction chambers IL164439A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37348902P 2002-04-17 2002-04-17
US10/247,722 US6846726B2 (en) 2002-04-17 2002-09-20 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
PCT/US2003/008702 WO2003090263A1 (fr) 2002-04-17 2003-03-21 Pieces en silicium pour chambres de reaction au plasma

Publications (1)

Publication Number Publication Date
IL164439A0 true IL164439A0 (en) 2005-12-18

Family

ID=32853019

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16443903A IL164439A0 (en) 2002-04-17 2003-03-21 Silicon parts for plasma reaction chambers
IL164439A IL164439A (en) 2002-04-17 2004-10-05 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL164439A IL164439A (en) 2002-04-17 2004-10-05 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers

Country Status (9)

Country Link
EP (1) EP1497849B1 (fr)
JP (2) JP4837894B2 (fr)
KR (1) KR100954711B1 (fr)
CN (1) CN100382230C (fr)
AT (1) ATE472172T1 (fr)
AU (1) AU2003220446A1 (fr)
DE (1) DE60333088D1 (fr)
IL (2) IL164439A0 (fr)
TW (1) TWI279857B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482550B2 (en) 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
JP2010519763A (ja) * 2007-02-22 2010-06-03 ハナ シリコン アイエヌシー プラズマ処理装置用シリコン素材の製造方法
US7942965B2 (en) * 2007-03-19 2011-05-17 Applied Materials, Inc. Method of fabricating plasma reactor parts
KR100922620B1 (ko) * 2007-08-24 2009-10-21 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
KR100922621B1 (ko) * 2007-08-24 2009-10-21 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
KR100918076B1 (ko) * 2007-08-24 2009-09-22 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
SG10201407723PA (en) * 2007-12-19 2014-12-30 Lam Res Corp A composite showerhead electrode assembly for a plasma processing apparatus
WO2009078923A2 (fr) 2007-12-19 2009-06-25 Lam Research Corporation Film adhésif pour appareil de traitement sous vide à semi-conducteurs
KR101485830B1 (ko) * 2013-12-30 2015-01-22 하나머티리얼즈(주) 내구성이 향상된 플라즈마 처리 장비용 단결정 실리콘 부품 및 이의 제조 방법
US9406534B2 (en) * 2014-09-17 2016-08-02 Lam Research Corporation Wet clean process for cleaning plasma processing chamber components
KR101984223B1 (ko) * 2014-10-22 2019-09-03 하나머티리얼즈(주) 반도체 공정용 플라즈마 장치의 일체형 상부 전극 및 이의 제조 방법
US9947558B2 (en) * 2016-08-12 2018-04-17 Lam Research Corporation Method for conditioning silicon part
KR20200052976A (ko) * 2017-10-05 2020-05-15 램 리써치 코포레이션 실리콘 튜브들을 생성하기 위한 퍼니스들 (furnace) 및 몰드들 (mold) 을 포함하는 전자기 주조 시스템들
CN111900071A (zh) * 2020-07-17 2020-11-06 上海富乐德智能科技发展有限公司 半导体设备蚀刻装置硅电极部件的再生方法
KR102494678B1 (ko) * 2021-04-14 2023-02-06 주식회사 케이엔제이 에지링 가공 시스템 및 방법
KR102498344B1 (ko) * 2021-04-14 2023-02-10 주식회사 케이엔제이 에지링 외경 가공장치 및 방법
KR102468583B1 (ko) * 2021-04-14 2022-11-22 주식회사 케이엔제이 에지링 내경 가공장치 및 방법

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US4666555A (en) * 1985-08-23 1987-05-19 Intel Corporation Plasma etching of silicon using fluorinated gas mixtures
JPH033244A (ja) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd 半導体シリコン基板の熱処理方法
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
JPH08236505A (ja) * 1995-02-28 1996-09-13 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極
JPH08274068A (ja) * 1995-03-30 1996-10-18 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極
JPH08274069A (ja) * 1995-03-30 1996-10-18 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極装置
JP2742247B2 (ja) * 1995-04-27 1998-04-22 信越半導体株式会社 シリコン単結晶基板の製造方法および品質管理方法
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JP3789586B2 (ja) * 1996-03-04 2006-06-28 信越化学工業株式会社 静電チャック
JP3172671B2 (ja) * 1996-03-19 2001-06-04 信越化学工業株式会社 静電チャック
JPH1098015A (ja) * 1996-09-24 1998-04-14 Komatsu Ltd ワイヤーソーのエンドレス接合方法
JP3298467B2 (ja) * 1997-07-18 2002-07-02 信越半導体株式会社 エピタキシャルウェーハの製造方法
JPH1154488A (ja) * 1997-08-04 1999-02-26 Shin Etsu Chem Co Ltd 電極板
JPH1199463A (ja) * 1997-09-26 1999-04-13 Hitachi Ltd 切断方法および装置
JP2000021852A (ja) * 1998-06-29 2000-01-21 Hitachi Chem Co Ltd プラズマエッチング電極及びプラズマエッチング装置
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
JP2000135663A (ja) * 1998-10-30 2000-05-16 Tottori Univ 被加工物自転型ワイヤソー及びウェハ製造方法
JP4367587B2 (ja) * 1998-12-01 2009-11-18 財団法人国際科学振興財団 洗浄方法
JP3744726B2 (ja) * 1999-06-08 2006-02-15 信越化学工業株式会社 シリコン電極板
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
JP2002068885A (ja) * 2000-08-28 2002-03-08 Shin Etsu Chem Co Ltd シリコン製部品およびその表面金属不純物量の測定方法

Also Published As

Publication number Publication date
TW200402789A (en) 2004-02-16
AU2003220446A1 (en) 2003-11-03
TWI279857B (en) 2007-04-21
KR100954711B1 (ko) 2010-04-23
EP1497849A1 (fr) 2005-01-19
EP1497849B1 (fr) 2010-06-23
DE60333088D1 (de) 2010-08-05
ATE472172T1 (de) 2010-07-15
JP4837894B2 (ja) 2011-12-14
CN1653589A (zh) 2005-08-10
KR20050006157A (ko) 2005-01-15
JP2005523584A (ja) 2005-08-04
IL164439A (en) 2010-05-17
JP2010157754A (ja) 2010-07-15
CN100382230C (zh) 2008-04-16

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