IL161965A0 - Surface emitting dfb laser for structures for broadband communication system and array of the same - Google Patents
Surface emitting dfb laser for structures for broadband communication system and array of the sameInfo
- Publication number
- IL161965A0 IL161965A0 IL16196502A IL16196502A IL161965A0 IL 161965 A0 IL161965 A0 IL 161965A0 IL 16196502 A IL16196502 A IL 16196502A IL 16196502 A IL16196502 A IL 16196502A IL 161965 A0 IL161965 A0 IL 161965A0
- Authority
- IL
- Israel
- Prior art keywords
- array
- structures
- communication system
- same
- surface emitting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002363149A CA2363149A1 (en) | 2001-11-16 | 2001-11-16 | Surface emitting dfb laser structures for broadband communication systems and array of same |
PCT/CA2002/001746 WO2003044910A2 (en) | 2001-11-16 | 2002-11-15 | Surface emitting dfb laser structures and array of the same for broadband communication system |
Publications (1)
Publication Number | Publication Date |
---|---|
IL161965A0 true IL161965A0 (en) | 2005-11-20 |
Family
ID=4170544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL16196502A IL161965A0 (en) | 2001-11-16 | 2002-11-15 | Surface emitting dfb laser for structures for broadband communication system and array of the same |
Country Status (12)
Country | Link |
---|---|
US (1) | US20050053112A1 (ko) |
EP (1) | EP1454391A2 (ko) |
JP (1) | JP2005510090A (ko) |
KR (1) | KR20040066127A (ko) |
CN (1) | CN1602570A (ko) |
AU (1) | AU2002342456A1 (ko) |
CA (1) | CA2363149A1 (ko) |
IL (1) | IL161965A0 (ko) |
MX (1) | MXPA04004666A (ko) |
NO (1) | NO20033213L (ko) |
RU (1) | RU2004118304A (ko) |
WO (1) | WO2003044910A2 (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2004246310A1 (en) * | 2003-06-10 | 2004-12-16 | Photonami Inc. | Method and apparatus for suppression of spatial-hole burning in second or higher order DFB lasers |
US20040258119A1 (en) * | 2003-06-10 | 2004-12-23 | Photonami Inc. | Method and apparatus for suppression of spatial-hole burning in second of higher order DFB lasers |
US7417789B2 (en) * | 2004-08-18 | 2008-08-26 | National Chiao Tung University | Solar-pumped active device |
JP2007227560A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | 利得結合型分布帰還型半導体レーザ |
US20110116523A1 (en) * | 2009-09-13 | 2011-05-19 | Alfalight Corp. | Method of beam formatting se-dfb laser array |
US20160377821A1 (en) * | 2012-03-05 | 2016-12-29 | Nanoprecision Products, Inc. | Optical connection of optical fibers to grating couplers |
US9350138B2 (en) * | 2013-02-18 | 2016-05-24 | Innolume Gmbh | Single-step-grown transversely coupled distributed feedback laser |
CN103197366B (zh) * | 2013-03-13 | 2015-06-17 | 北京工业大学 | 基于异质结光栅的偏振滤波器及制备方法 |
CN106356712B (zh) * | 2016-10-13 | 2023-05-05 | 中国科学院上海技术物理研究所 | 一种基于球形多路双异质结量子点的人工复眼激光器系统 |
US11158996B2 (en) | 2017-09-28 | 2021-10-26 | Apple Inc. | Laser architectures using quantum well intermixing techniques |
CN111164415A (zh) | 2017-09-29 | 2020-05-15 | 苹果公司 | 路径解析的光学采样架构 |
EP3688422B1 (en) | 2017-09-29 | 2024-05-15 | Apple Inc. | Connected epitaxial optical sensing systems |
AU2020100473B4 (en) * | 2017-09-29 | 2020-11-26 | Apple Inc. | Connected epitaxial optical sensing systems |
CN114545550B (zh) | 2018-02-13 | 2024-05-28 | 苹果公司 | 具有集成边缘外耦合器的集成光子装置 |
CN108736314B (zh) * | 2018-06-12 | 2020-06-19 | 中国科学院半导体研究所 | 电注入硅基iii-v族纳米激光器阵列的制备方法 |
US11644618B2 (en) | 2018-06-22 | 2023-05-09 | Apple Inc. | Discrete optical unit on a substrate of an integrated photonics chip |
US11525967B1 (en) | 2018-09-28 | 2022-12-13 | Apple Inc. | Photonics integrated circuit architecture |
US11171464B1 (en) | 2018-12-14 | 2021-11-09 | Apple Inc. | Laser integration techniques |
US11525958B1 (en) | 2019-09-09 | 2022-12-13 | Apple Inc. | Off-cut wafer with a supported outcoupler |
US11231319B1 (en) | 2019-09-09 | 2022-01-25 | Apple Inc. | Athermal wavelength stability monitor using a detraction grating |
US11506535B1 (en) | 2019-09-09 | 2022-11-22 | Apple Inc. | Diffraction grating design |
US11835836B1 (en) | 2019-09-09 | 2023-12-05 | Apple Inc. | Mach-Zehnder interferometer device for wavelength locking |
US11881678B1 (en) | 2019-09-09 | 2024-01-23 | Apple Inc. | Photonics assembly with a photonics die stack |
US11320718B1 (en) | 2019-09-26 | 2022-05-03 | Apple Inc. | Cantilever beam waveguide for silicon photonics device |
US11500154B1 (en) | 2019-10-18 | 2022-11-15 | Apple Inc. | Asymmetric optical power splitting system and method |
CN111755946A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | 有源腔与无源腔交替结构的dfb激光器 |
KR20230043191A (ko) | 2020-09-09 | 2023-03-30 | 애플 인크. | 노이즈 완화를 위한 광학 시스템 |
US11561346B2 (en) | 2020-09-24 | 2023-01-24 | Apple Inc. | Tunable echelle grating |
US11852865B2 (en) | 2020-09-24 | 2023-12-26 | Apple Inc. | Optical system with phase shifting elements |
US11906778B2 (en) | 2020-09-25 | 2024-02-20 | Apple Inc. | Achromatic light splitting device with a high V number and a low V number waveguide |
US11815719B2 (en) | 2020-09-25 | 2023-11-14 | Apple Inc. | Wavelength agile multiplexing |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61140189A (ja) * | 1984-12-12 | 1986-06-27 | Canon Inc | 半導体レ−ザ |
US4807955A (en) * | 1987-08-06 | 1989-02-28 | Amp Incorporated | Opto-electrical connecting means |
JP2768672B2 (ja) * | 1987-09-30 | 1998-06-25 | 株式会社日立製作所 | 面発光半導体レーザ |
JP2692913B2 (ja) * | 1987-12-19 | 1997-12-17 | 株式会社東芝 | グレーティング結合型表面発光レーザ素子およびその変調方法 |
EP0361399A3 (en) * | 1988-09-28 | 1990-07-18 | Canon Kabushiki Kaisha | Semmiconductor laser array including lasers with reflecting means having different wavelength selection properties |
US5033053A (en) * | 1989-03-30 | 1991-07-16 | Canon Kabushiki Kaisha | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same |
JPH02271586A (ja) * | 1989-04-12 | 1990-11-06 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US4976539A (en) * | 1989-08-29 | 1990-12-11 | David Sarnoff Research Center, Inc. | Diode laser array |
US5070509A (en) * | 1990-08-09 | 1991-12-03 | Eastman Kodak Company | Surface emitting, low threshold (SELTH) laser diode |
US5274649A (en) * | 1990-11-21 | 1993-12-28 | Kabushiki Kaisha Toshiba | Wavelength-tunable distributed-feedback semiconductor laser device |
US5233187A (en) * | 1991-01-22 | 1993-08-03 | Canon Kabushiki Kaisha | Multi-wavelength light detecting and/or emitting apparatuses having serially arranged grating directional couplers |
US5164956A (en) * | 1991-10-21 | 1992-11-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multiperiod-grating surface-emitting lasers |
US5241556A (en) * | 1992-01-28 | 1993-08-31 | Hughes Aircraft Company | Chirped grating surface emitting distributed feedback semiconductor laser |
US5384797A (en) * | 1992-09-21 | 1995-01-24 | Sdl, Inc. | Monolithic multi-wavelength laser diode array |
US5345466A (en) * | 1992-11-12 | 1994-09-06 | Hughes Aircraft Company | Curved grating surface emitting distributed feedback semiconductor laser |
KR950002068B1 (ko) * | 1992-11-25 | 1995-03-10 | 삼성전자주식회사 | 제2고조파 발생방법 및 그 장치 |
US5355237A (en) * | 1993-03-17 | 1994-10-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Wavelength-division multiplexed optical integrated circuit with vertical diffraction grating |
FR2706079B1 (fr) * | 1993-06-02 | 1995-07-21 | France Telecom | Composant intégré monolithique laser-modulateur à structure multi-puits quantiques. |
JPH0738205A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 面発光レーザダイオードアレイ及びその駆動方法,光検出素子,光検出素子アレイ,空間光接続システム,並びに波長多重光通信システム |
US5448581A (en) * | 1993-11-29 | 1995-09-05 | Northern Telecom Limited | Circular grating lasers |
US5452318A (en) * | 1993-12-16 | 1995-09-19 | Northern Telecom Limited | Gain-coupled DFB laser with index coupling compensation |
JPH07209603A (ja) * | 1994-01-21 | 1995-08-11 | Fujitsu Ltd | 光アイソレータ |
JPH08107252A (ja) * | 1994-10-06 | 1996-04-23 | Mitsubishi Electric Corp | 半導体レーザ装置,及び半導体レーザアレイ装置 |
US5536085A (en) * | 1995-03-30 | 1996-07-16 | Northern Telecom Limited | Multi-wavelength gain-coupled distributed feedback laser array with fine tunability |
US5727013A (en) * | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
JP3714430B2 (ja) * | 1996-04-15 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
US5717804A (en) * | 1996-04-30 | 1998-02-10 | E-Tek Dynamics, Inc. | Integrated laser diode and fiber grating assembly |
US5970081A (en) * | 1996-09-17 | 1999-10-19 | Kabushiki Kaisha Toshiba | Grating coupled surface emitting device |
US6088374A (en) * | 1997-04-15 | 2000-07-11 | Nec Corporation | Multi-wavelength semiconductor laser array having phase-shift structures |
US5870512A (en) * | 1997-05-30 | 1999-02-09 | Sdl, Inc. | Optimized interferometrically modulated array source |
JPH1117279A (ja) * | 1997-06-20 | 1999-01-22 | Toshiba Corp | 波長多重光通信用素子、送信器、受信器および波長多重光通信システム |
JP3180725B2 (ja) * | 1997-08-05 | 2001-06-25 | 日本電気株式会社 | 分布帰還型半導体レーザ |
US5936994A (en) * | 1997-09-18 | 1999-08-10 | Northern Telecom Limited | Two-section complex coupled distributed feedback semiconductor laser with enhanced wavelength tuning range |
US6026110A (en) * | 1997-10-16 | 2000-02-15 | Nortel Networks Corporation | Distributed feedback semiconductor laser with gain modulation |
JPH11233898A (ja) * | 1997-12-03 | 1999-08-27 | Canon Inc | 分布帰還型半導体レーザとその駆動方法 |
US6104739A (en) * | 1997-12-24 | 2000-08-15 | Nortel Networks Corporation | Series of strongly complex coupled DFB lasers |
US6289028B1 (en) * | 1998-02-19 | 2001-09-11 | Uniphase Telecommunications Products, Inc. | Method and apparatus for monitoring and control of laser emission wavelength |
EP0948104B1 (en) * | 1998-03-30 | 2003-02-12 | Sumitomo Electric Industries, Ltd. | Semiconductor laser module and method of manufacturing the same |
US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
US6195381B1 (en) * | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
US6097748A (en) * | 1998-05-18 | 2000-08-01 | Motorola, Inc. | Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication |
JP3186705B2 (ja) * | 1998-08-27 | 2001-07-11 | 日本電気株式会社 | 分布帰還型半導体レーザ |
JP2000174397A (ja) * | 1998-12-02 | 2000-06-23 | Nec Corp | 多波長光源装置及びその発振周波数制御方法 |
US6330388B1 (en) * | 1999-01-27 | 2001-12-11 | Northstar Photonics, Inc. | Method and apparatus for waveguide optics and devices |
JP3928295B2 (ja) * | 1999-03-16 | 2007-06-13 | 富士ゼロックス株式会社 | 面発光型半導体レーザ |
WO2001013480A1 (en) * | 1999-08-13 | 2001-02-22 | Wisconsin Alumni Research Foundation | Single mode, single lobe surface emitting distributed feedback semiconductor laser |
-
2001
- 2001-11-16 CA CA002363149A patent/CA2363149A1/en not_active Abandoned
-
2002
- 2002-11-15 JP JP2003546446A patent/JP2005510090A/ja active Pending
- 2002-11-15 KR KR10-2004-7007518A patent/KR20040066127A/ko not_active Application Discontinuation
- 2002-11-15 IL IL16196502A patent/IL161965A0/xx unknown
- 2002-11-15 AU AU2002342456A patent/AU2002342456A1/en not_active Abandoned
- 2002-11-15 EP EP02779056A patent/EP1454391A2/en not_active Withdrawn
- 2002-11-15 WO PCT/CA2002/001746 patent/WO2003044910A2/en not_active Application Discontinuation
- 2002-11-15 MX MXPA04004666A patent/MXPA04004666A/es unknown
- 2002-11-15 CN CNA028248872A patent/CN1602570A/zh active Pending
- 2002-11-15 US US10/495,723 patent/US20050053112A1/en not_active Abandoned
- 2002-11-15 RU RU2004118304/28A patent/RU2004118304A/ru not_active Application Discontinuation
-
2003
- 2003-07-15 NO NO20033213A patent/NO20033213L/no unknown
Also Published As
Publication number | Publication date |
---|---|
CA2363149A1 (en) | 2003-05-16 |
US20050053112A1 (en) | 2005-03-10 |
AU2002342456A1 (en) | 2003-06-10 |
CN1602570A (zh) | 2005-03-30 |
JP2005510090A (ja) | 2005-04-14 |
WO2003044910A2 (en) | 2003-05-30 |
MXPA04004666A (es) | 2005-05-17 |
NO20033213L (no) | 2003-09-16 |
EP1454391A2 (en) | 2004-09-08 |
NO20033213D0 (no) | 2003-07-15 |
KR20040066127A (ko) | 2004-07-23 |
WO2003044910A3 (en) | 2003-12-11 |
RU2004118304A (ru) | 2005-04-10 |
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