AU2002229980A1 - Thermally stabilized semiconductor laser - Google Patents
Thermally stabilized semiconductor laserInfo
- Publication number
- AU2002229980A1 AU2002229980A1 AU2002229980A AU2002229980A AU2002229980A1 AU 2002229980 A1 AU2002229980 A1 AU 2002229980A1 AU 2002229980 A AU2002229980 A AU 2002229980A AU 2002229980 A AU2002229980 A AU 2002229980A AU 2002229980 A1 AU2002229980 A1 AU 2002229980A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor laser
- thermally stabilized
- stabilized semiconductor
- thermally
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0103701A GB2372376A (en) | 2001-02-15 | 2001-02-15 | Semiconductor Laser |
GB0103701.9 | 2001-02-15 | ||
PCT/GB2002/000655 WO2002065598A2 (en) | 2001-02-15 | 2002-02-13 | Thermally stabilized semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002229980A1 true AU2002229980A1 (en) | 2002-08-28 |
Family
ID=9908772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002229980A Abandoned AU2002229980A1 (en) | 2001-02-15 | 2002-02-13 | Thermally stabilized semiconductor laser |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2002229980A1 (en) |
GB (1) | GB2372376A (en) |
WO (1) | WO2002065598A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080063016A1 (en) * | 2006-09-13 | 2008-03-13 | Vikram Bhatia | Thermal compensation in semiconductor lasers |
JP4850757B2 (en) * | 2007-03-08 | 2012-01-11 | 日本電信電話株式会社 | Wavelength tunable semiconductor laser device, control device and control method thereof |
CN105659449B (en) * | 2013-10-10 | 2020-01-10 | 汽车交通安全联合公司 | System and method for controlling a collocated multiple wavelength tuned laser |
EP3048680A1 (en) * | 2015-01-23 | 2016-07-27 | Alcatel Lucent | Transient wavelength drift reduction in semiconductor lasers |
CN109219908B (en) | 2016-01-04 | 2021-10-01 | 汽车交通安全联合公司 | Heater on radiator |
JP6626412B2 (en) * | 2016-06-20 | 2019-12-25 | 日本電信電話株式会社 | Wavelength tunable semiconductor laser array and method of controlling wavelength tunable semiconductor laser array |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01251686A (en) * | 1988-03-30 | 1989-10-06 | Canon Inc | Laser emitting device |
US5140605A (en) * | 1991-06-27 | 1992-08-18 | Xerox Corporation | Thermally stabilized diode laser structure |
US5309458A (en) * | 1992-03-02 | 1994-05-03 | Ecrm Trust | Method and apparatus for stabilizing laser diode energy output |
US5345459A (en) * | 1993-09-09 | 1994-09-06 | Northern Telecom Limited | Method of reducing the thermally-induced shift in the emission wavelength of laser diodes |
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
US5515391A (en) * | 1994-03-07 | 1996-05-07 | Sdl, Inc. | Thermally balanced diode laser package |
JP3139442B2 (en) * | 1998-02-17 | 2001-02-26 | 日本電気株式会社 | Optical transmitter |
US6553044B1 (en) * | 1998-10-20 | 2003-04-22 | Quantum Devices, Inc. | Method and apparatus for reducing electrical and thermal crosstalk of a laser array |
-
2001
- 2001-02-15 GB GB0103701A patent/GB2372376A/en not_active Withdrawn
-
2002
- 2002-02-13 WO PCT/GB2002/000655 patent/WO2002065598A2/en not_active Application Discontinuation
- 2002-02-13 AU AU2002229980A patent/AU2002229980A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2002065598A2 (en) | 2002-08-22 |
GB0103701D0 (en) | 2001-03-28 |
GB2372376A (en) | 2002-08-21 |
WO2002065598A3 (en) | 2003-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2003298532A1 (en) | Grating-stabilized semiconductor laser | |
EP1396914A4 (en) | Multi-beam semiconductor laser element | |
AU2002335712A1 (en) | Thermoelectric cooling system | |
DE60234590D1 (en) | nitride semiconductor laser | |
AU2003227230A1 (en) | Semiconductor laser device | |
EP1577992A4 (en) | Semiconductor laser assembly | |
AU2002342500A1 (en) | Thermally loaded component | |
AU2003251680A1 (en) | Semiconductor laser device | |
GB2380061B8 (en) | Semiconductor laser array | |
EP1227556A3 (en) | Complex-coupled distributed feedback semiconductor laser device | |
AU2001236025A1 (en) | Semiconductor laser device | |
AU2003268174A1 (en) | Semiconductor laser | |
AU2002229980A1 (en) | Thermally stabilized semiconductor laser | |
AU2002227520A1 (en) | Improved semiconductor laser | |
AU2002255825A1 (en) | Semiconductor laser pump locker incorporating multiple gratings | |
AU2003262016A1 (en) | Semiconductor laser | |
AU2002245227A1 (en) | Diode laser | |
AU2002217334A1 (en) | Semiconductor optical amplifier | |
GB0108291D0 (en) | Laser | |
AU2002306372B2 (en) | Semiconductor laser element | |
AU2002306372A1 (en) | Semiconductor laser element | |
GB2384617B (en) | Semiconductor laser diodes | |
AU2003243071A1 (en) | Temperature control for semiconductor lasers | |
AU2002239073A1 (en) | Semiconductor laser device | |
AU2002250958A1 (en) | Surface-emitting semiconductor laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |