GB0103701D0 - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
GB0103701D0
GB0103701D0 GBGB0103701.9A GB0103701A GB0103701D0 GB 0103701 D0 GB0103701 D0 GB 0103701D0 GB 0103701 A GB0103701 A GB 0103701A GB 0103701 D0 GB0103701 D0 GB 0103701D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0103701.9A
Other versions
GB2372376A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marconi Caswell Ltd
Original Assignee
Marconi Caswell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Caswell Ltd filed Critical Marconi Caswell Ltd
Priority to GB0103701A priority Critical patent/GB2372376A/en
Publication of GB0103701D0 publication Critical patent/GB0103701D0/en
Priority to PCT/GB2002/000655 priority patent/WO2002065598A2/en
Priority to AU2002229980A priority patent/AU2002229980A1/en
Publication of GB2372376A publication Critical patent/GB2372376A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
GB0103701A 2001-02-15 2001-02-15 Semiconductor Laser Withdrawn GB2372376A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0103701A GB2372376A (en) 2001-02-15 2001-02-15 Semiconductor Laser
PCT/GB2002/000655 WO2002065598A2 (en) 2001-02-15 2002-02-13 Thermally stabilized semiconductor laser
AU2002229980A AU2002229980A1 (en) 2001-02-15 2002-02-13 Thermally stabilized semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0103701A GB2372376A (en) 2001-02-15 2001-02-15 Semiconductor Laser

Publications (2)

Publication Number Publication Date
GB0103701D0 true GB0103701D0 (en) 2001-03-28
GB2372376A GB2372376A (en) 2002-08-21

Family

ID=9908772

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0103701A Withdrawn GB2372376A (en) 2001-02-15 2001-02-15 Semiconductor Laser

Country Status (3)

Country Link
AU (1) AU2002229980A1 (en)
GB (1) GB2372376A (en)
WO (1) WO2002065598A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080063016A1 (en) * 2006-09-13 2008-03-13 Vikram Bhatia Thermal compensation in semiconductor lasers
JP4850757B2 (en) * 2007-03-08 2012-01-11 日本電信電話株式会社 Wavelength tunable semiconductor laser device, control device and control method thereof
CA2925806C (en) * 2013-10-10 2022-01-04 Automotive Coalition For Traffic Safety, Inc. System and method for controlling collocated multiple wavelength tuned lasers
EP3048680A1 (en) * 2015-01-23 2016-07-27 Alcatel Lucent Transient wavelength drift reduction in semiconductor lasers
CN109219908B (en) 2016-01-04 2021-10-01 汽车交通安全联合公司 Heater on radiator
JP6626412B2 (en) * 2016-06-20 2019-12-25 日本電信電話株式会社 Wavelength tunable semiconductor laser array and method of controlling wavelength tunable semiconductor laser array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251686A (en) * 1988-03-30 1989-10-06 Canon Inc Laser emitting device
US5140605A (en) * 1991-06-27 1992-08-18 Xerox Corporation Thermally stabilized diode laser structure
US5309458A (en) * 1992-03-02 1994-05-03 Ecrm Trust Method and apparatus for stabilizing laser diode energy output
US5345459A (en) * 1993-09-09 1994-09-06 Northern Telecom Limited Method of reducing the thermally-induced shift in the emission wavelength of laser diodes
US5379318A (en) * 1994-01-31 1995-01-03 Telefonaktiebolaget L M Ericsson Alternating grating tunable DBR laser
US5515391A (en) * 1994-03-07 1996-05-07 Sdl, Inc. Thermally balanced diode laser package
JP3139442B2 (en) * 1998-02-17 2001-02-26 日本電気株式会社 Optical transmitter
US6553044B1 (en) * 1998-10-20 2003-04-22 Quantum Devices, Inc. Method and apparatus for reducing electrical and thermal crosstalk of a laser array

Also Published As

Publication number Publication date
WO2002065598A2 (en) 2002-08-22
AU2002229980A1 (en) 2002-08-28
GB2372376A (en) 2002-08-21
WO2002065598A3 (en) 2003-09-12

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Legal Events

Date Code Title Description
COOA Change in applicant's name or ownership of the application
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)