WO2002065598A3 - Thermally stabilized semiconductor laser - Google Patents
Thermally stabilized semiconductor laser Download PDFInfo
- Publication number
- WO2002065598A3 WO2002065598A3 PCT/GB2002/000655 GB0200655W WO02065598A3 WO 2002065598 A3 WO2002065598 A3 WO 2002065598A3 GB 0200655 W GB0200655 W GB 0200655W WO 02065598 A3 WO02065598 A3 WO 02065598A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- associated means
- semiconductor laser
- thermally stabilized
- stabilized semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002229980A AU2002229980A1 (en) | 2001-02-15 | 2002-02-13 | Thermally stabilized semiconductor laser |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0103701.9 | 2001-02-15 | ||
GB0103701A GB2372376A (en) | 2001-02-15 | 2001-02-15 | Semiconductor Laser |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002065598A2 WO2002065598A2 (en) | 2002-08-22 |
WO2002065598A3 true WO2002065598A3 (en) | 2003-09-12 |
Family
ID=9908772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2002/000655 WO2002065598A2 (en) | 2001-02-15 | 2002-02-13 | Thermally stabilized semiconductor laser |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2002229980A1 (en) |
GB (1) | GB2372376A (en) |
WO (1) | WO2002065598A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080063016A1 (en) * | 2006-09-13 | 2008-03-13 | Vikram Bhatia | Thermal compensation in semiconductor lasers |
JP4850757B2 (en) * | 2007-03-08 | 2012-01-11 | 日本電信電話株式会社 | Wavelength tunable semiconductor laser device, control device and control method thereof |
CA2925806C (en) * | 2013-10-10 | 2022-01-04 | Automotive Coalition For Traffic Safety, Inc. | System and method for controlling collocated multiple wavelength tuned lasers |
EP3048680A1 (en) * | 2015-01-23 | 2016-07-27 | Alcatel Lucent | Transient wavelength drift reduction in semiconductor lasers |
EP3400634A1 (en) | 2016-01-04 | 2018-11-14 | Automotive Coalition for Traffic Safety, Inc. | Heater-on-heatspreader |
JP6626412B2 (en) * | 2016-06-20 | 2019-12-25 | 日本電信電話株式会社 | Wavelength tunable semiconductor laser array and method of controlling wavelength tunable semiconductor laser array |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01251686A (en) * | 1988-03-30 | 1989-10-06 | Canon Inc | Laser emitting device |
EP0578883A1 (en) * | 1991-06-27 | 1994-01-19 | Xerox Corporation | Diode Lasers |
US5309458A (en) * | 1992-03-02 | 1994-05-03 | Ecrm Trust | Method and apparatus for stabilizing laser diode energy output |
US5345459A (en) * | 1993-09-09 | 1994-09-06 | Northern Telecom Limited | Method of reducing the thermally-induced shift in the emission wavelength of laser diodes |
US5515391A (en) * | 1994-03-07 | 1996-05-07 | Sdl, Inc. | Thermally balanced diode laser package |
US5999551A (en) * | 1998-02-17 | 1999-12-07 | Nec Corporation | Optical transmitter with a temperature-compensating means |
WO2000024096A1 (en) * | 1998-10-20 | 2000-04-27 | Quantum Devices, Incorporated | Method and apparatus for reducing electrical and thermal crosstalk of a laser array |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
-
2001
- 2001-02-15 GB GB0103701A patent/GB2372376A/en not_active Withdrawn
-
2002
- 2002-02-13 WO PCT/GB2002/000655 patent/WO2002065598A2/en not_active Application Discontinuation
- 2002-02-13 AU AU2002229980A patent/AU2002229980A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01251686A (en) * | 1988-03-30 | 1989-10-06 | Canon Inc | Laser emitting device |
EP0578883A1 (en) * | 1991-06-27 | 1994-01-19 | Xerox Corporation | Diode Lasers |
US5309458A (en) * | 1992-03-02 | 1994-05-03 | Ecrm Trust | Method and apparatus for stabilizing laser diode energy output |
US5345459A (en) * | 1993-09-09 | 1994-09-06 | Northern Telecom Limited | Method of reducing the thermally-induced shift in the emission wavelength of laser diodes |
US5515391A (en) * | 1994-03-07 | 1996-05-07 | Sdl, Inc. | Thermally balanced diode laser package |
US5999551A (en) * | 1998-02-17 | 1999-12-07 | Nec Corporation | Optical transmitter with a temperature-compensating means |
WO2000024096A1 (en) * | 1998-10-20 | 2000-04-27 | Quantum Devices, Incorporated | Method and apparatus for reducing electrical and thermal crosstalk of a laser array |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 014, no. 002 (E - 868) 8 January 1990 (1990-01-08) * |
SHASTRI K R ET AL: "1.2 GB/S INTEGRATED LASER DRIVER WITH TEMPERATURE COMPENSATION FOR MODULATION CURRENT", PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE. SAN DIEGO, MAY 12 - 15, 1991, NEW YORK, IEEE, US, vol. CONF. 13, 12 May 1991 (1991-05-12), pages 2751 - 2754, XP000255394, ISBN: 0-7803-0015-7 * |
Also Published As
Publication number | Publication date |
---|---|
WO2002065598A2 (en) | 2002-08-22 |
AU2002229980A1 (en) | 2002-08-28 |
GB2372376A (en) | 2002-08-21 |
GB0103701D0 (en) | 2001-03-28 |
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