AU2003262016A1 - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
AU2003262016A1
AU2003262016A1 AU2003262016A AU2003262016A AU2003262016A1 AU 2003262016 A1 AU2003262016 A1 AU 2003262016A1 AU 2003262016 A AU2003262016 A AU 2003262016A AU 2003262016 A AU2003262016 A AU 2003262016A AU 2003262016 A1 AU2003262016 A1 AU 2003262016A1
Authority
AU
Australia
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003262016A
Inventor
Hideyoshi Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of AU2003262016A1 publication Critical patent/AU2003262016A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
AU2003262016A 2002-09-20 2003-09-09 Semiconductor laser Abandoned AU2003262016A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-275917 2002-09-20
JP2002275917 2002-09-20
PCT/JP2003/011488 WO2004027950A1 (en) 2002-09-20 2003-09-09 Semiconductor laser

Publications (1)

Publication Number Publication Date
AU2003262016A1 true AU2003262016A1 (en) 2004-04-08

Family

ID=32025048

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003262016A Abandoned AU2003262016A1 (en) 2002-09-20 2003-09-09 Semiconductor laser

Country Status (4)

Country Link
JP (1) JP4345673B2 (en)
CN (1) CN100359772C (en)
AU (1) AU2003262016A1 (en)
WO (1) WO2004027950A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182145A (en) 2008-01-30 2009-08-13 Sumitomo Electric Ind Ltd Semiconductor optical element
JP2010021430A (en) 2008-07-11 2010-01-28 Sumitomo Electric Ind Ltd Semiconductor photonic element
JP2011114214A (en) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp Semiconductor laser device
CN104515740B (en) * 2013-09-17 2017-07-07 中央研究院 Non-calibration type detection system and detection method thereof
WO2015052861A1 (en) * 2013-10-10 2015-04-16 パナソニックＩｐマネジメント株式会社 Light-emitting semiconductor device
CN109672088A (en) * 2018-12-29 2019-04-23 江西德瑞光电技术有限责任公司 A kind of semiconductor laser chip manufacturing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680859B2 (en) * 1984-12-27 1994-10-12 ソニー株式会社 Semiconductor laser
JPS63208290A (en) * 1987-02-25 1988-08-29 Hitachi Ltd Semiconductor laser device
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JP3325380B2 (en) * 1994-03-09 2002-09-17 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
JPH09232692A (en) * 1996-02-16 1997-09-05 Lucent Technol Inc Semiconductor laser device
JP2001210910A (en) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp Semiconductor laser

Also Published As

Publication number Publication date
JPWO2004027950A1 (en) 2006-01-19
CN1701480A (en) 2005-11-23
JP4345673B2 (en) 2009-10-14
WO2004027950A1 (en) 2004-04-01
CN100359772C (en) 2008-01-02

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase