AU2001280055A1 - Characterization of multiple section semiconductor lasers - Google Patents

Characterization of multiple section semiconductor lasers

Info

Publication number
AU2001280055A1
AU2001280055A1 AU2001280055A AU8005501A AU2001280055A1 AU 2001280055 A1 AU2001280055 A1 AU 2001280055A1 AU 2001280055 A AU2001280055 A AU 2001280055A AU 8005501 A AU8005501 A AU 8005501A AU 2001280055 A1 AU2001280055 A1 AU 2001280055A1
Authority
AU
Australia
Prior art keywords
characterization
semiconductor lasers
multiple section
section semiconductor
lasers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280055A
Inventor
Efraim Buimovich
Shmuel Rubin
Dan Sadot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xlight Photonics Inc
Original Assignee
Xlight Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xlight Photonics Inc filed Critical Xlight Photonics Inc
Publication of AU2001280055A1 publication Critical patent/AU2001280055A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
AU2001280055A 2000-08-07 2001-08-07 Characterization of multiple section semiconductor lasers Abandoned AU2001280055A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IL137732 2000-08-07
IL137732A IL137732A (en) 2000-08-07 2000-08-07 Characterization of multiple section semiconductor lasers
PCT/IL2001/000727 WO2002013341A2 (en) 2000-08-07 2001-08-07 Characterization of multiple section semiconductor lasers

Publications (1)

Publication Number Publication Date
AU2001280055A1 true AU2001280055A1 (en) 2002-02-18

Family

ID=11074494

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280055A Abandoned AU2001280055A1 (en) 2000-08-07 2001-08-07 Characterization of multiple section semiconductor lasers

Country Status (4)

Country Link
US (1) US6990129B2 (en)
AU (1) AU2001280055A1 (en)
IL (1) IL137732A (en)
WO (1) WO2002013341A2 (en)

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US7436871B2 (en) * 2004-12-03 2008-10-14 Corning Incorporated Method and device for performing wavelength modulation with Distributed Bragg Reflector (DBR) laser
US7962045B2 (en) 2006-12-22 2011-06-14 Finisar Corporation Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element
US7941057B2 (en) 2006-12-28 2011-05-10 Finisar Corporation Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal
US8131157B2 (en) 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US7962044B2 (en) 2007-02-02 2011-06-14 Finisar Corporation Temperature stabilizing packaging for optoelectronic components in a transmitter module
US8027593B2 (en) 2007-02-08 2011-09-27 Finisar Corporation Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers
US7991291B2 (en) 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
US7991297B2 (en) 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US8204386B2 (en) 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US8160455B2 (en) 2008-01-22 2012-04-17 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US8260150B2 (en) 2008-04-25 2012-09-04 Finisar Corporation Passive wave division multiplexed transmitter having a directly modulated laser array
US8199785B2 (en) 2009-06-30 2012-06-12 Finisar Corporation Thermal chirp compensation in a chirp managed laser
JP2013168500A (en) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp Optical semiconductor device
WO2015134979A1 (en) 2014-03-07 2015-09-11 Skorpios Technologies, Inc. Directional semiconductor waveguide coupler
US10003173B2 (en) * 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
WO2016144831A1 (en) * 2015-03-06 2016-09-15 Apple Inc. Independent control of emission wavelength and output power of a semiconductor laser
WO2016176364A1 (en) 2015-04-30 2016-11-03 Apple Inc. Vernier effect dbr lasers incorporating integrated tuning elements
WO2017066095A1 (en) * 2015-10-13 2017-04-20 The Regents Of The University Of California System and method for bound state in continuum laser sources
US10320152B2 (en) * 2017-03-28 2019-06-11 Freedom Photonics Llc Tunable laser
WO2019067455A1 (en) 2017-09-28 2019-04-04 Masseta Technologies Llc Laser architectures using quantum well intermixing techniques
US11552454B1 (en) 2017-09-28 2023-01-10 Apple Inc. Integrated laser source
US11171464B1 (en) 2018-12-14 2021-11-09 Apple Inc. Laser integration techniques
CN115524099B (en) * 2022-09-05 2023-06-09 武汉敏芯半导体股份有限公司 Semiconductor laser testing method, semiconductor laser testing device, computer equipment and storage medium

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Also Published As

Publication number Publication date
IL137732A (en) 2006-12-31
US20030161370A1 (en) 2003-08-28
US6990129B2 (en) 2006-01-24
IL137732A0 (en) 2001-10-31
WO2002013341A2 (en) 2002-02-14
WO2002013341A3 (en) 2003-10-30

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