IL148912A0 - Uniform gas distribution in large area plasma source - Google Patents

Uniform gas distribution in large area plasma source

Info

Publication number
IL148912A0
IL148912A0 IL14891200A IL14891200A IL148912A0 IL 148912 A0 IL148912 A0 IL 148912A0 IL 14891200 A IL14891200 A IL 14891200A IL 14891200 A IL14891200 A IL 14891200A IL 148912 A0 IL148912 A0 IL 148912A0
Authority
IL
Israel
Prior art keywords
large area
gas distribution
plasma source
uniform gas
area plasma
Prior art date
Application number
IL14891200A
Other languages
English (en)
Original Assignee
European Community
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by European Community filed Critical European Community
Publication of IL148912A0 publication Critical patent/IL148912A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
IL14891200A 1999-09-29 2000-09-18 Uniform gas distribution in large area plasma source IL148912A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP99402374A EP1089319B1 (en) 1999-09-29 1999-09-29 Uniform gas distribution in large area plasma treatment device
PCT/EP2000/009996 WO2001024220A2 (en) 1999-09-29 2000-09-18 Uniform gas distribution in large area plasma treatment device

Publications (1)

Publication Number Publication Date
IL148912A0 true IL148912A0 (en) 2002-09-12

Family

ID=8242127

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14891200A IL148912A0 (en) 1999-09-29 2000-09-18 Uniform gas distribution in large area plasma source

Country Status (12)

Country Link
US (1) US6682630B1 (ja)
EP (1) EP1089319B1 (ja)
JP (1) JP2003510780A (ja)
KR (1) KR100797206B1 (ja)
AT (1) ATE420453T1 (ja)
CA (1) CA2386078C (ja)
DE (1) DE69940260D1 (ja)
DK (1) DK1089319T3 (ja)
ES (1) ES2320501T3 (ja)
IL (1) IL148912A0 (ja)
NO (1) NO327017B1 (ja)
WO (1) WO2001024220A2 (ja)

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US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
ES2208530T3 (es) * 2001-04-27 2004-06-16 European Community Metodo y aparato para el tratamiento secuencial por plasma.
KR100422488B1 (ko) * 2001-07-09 2004-03-12 에이엔 에스 주식회사 플라즈마 처리 장치
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP2004047696A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置、整合回路
DE10392996T5 (de) * 2002-08-08 2005-07-21 Trikon Technologies Limited, Newport Verbesserungen für Duschköpfe
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7318947B1 (en) 2004-08-31 2008-01-15 Western Digital (Fremont), Llc Method and apparatus for controlling magnetostriction in a spin valve sensor
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
EP1662546A1 (en) * 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
KR100760026B1 (ko) * 2005-12-13 2007-09-20 주식회사 뉴파워 프라즈마 플라즈마 발생기를 위한 페라이트 코어 조립체 및 이를구비한 플라즈마 처리 시스템
US20070170155A1 (en) * 2006-01-20 2007-07-26 Fink Steven T Method and apparatus for modifying an etch profile
KR100760830B1 (ko) * 2006-03-21 2007-09-21 주식회사 아토 자성체가 삽입된 공동 전극 및 이를 이용한 가스 분리형샤워헤드
EP2087778A4 (en) * 2006-08-22 2010-11-17 Mattson Tech Inc INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY
US8992725B2 (en) * 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
DE102007026349A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Aus einer Vielzahl diffusionsverschweißter Scheiben bestehender Gasverteiler
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
WO2011013385A1 (ja) * 2009-07-31 2011-02-03 キヤノンアネルバ株式会社 プラズマ処理装置および磁気記録媒体の製造方法
JP5642181B2 (ja) * 2009-08-21 2014-12-17 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 基体を処理する装置及び基体の処理方法
JP5635367B2 (ja) * 2010-10-29 2014-12-03 株式会社イー・エム・ディー プラズマ処理装置
CN102548180A (zh) * 2010-12-27 2012-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 介质窗、电感耦合线圈组件及等离子体处理设备
US9129778B2 (en) * 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
KR101886740B1 (ko) * 2011-11-01 2018-09-11 삼성디스플레이 주식회사 기상 증착 장치 및 유기 발광 표시 장치 제조 방법
TWI596644B (zh) * 2012-03-22 2017-08-21 藍姆研究公司 流體分配元件組件及電漿處理設備
JP2014055785A (ja) * 2012-09-11 2014-03-27 Shimadzu Corp プラズマ用高周波電源及びそれを用いたｉｃｐ発光分光分析装置
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
KR102125028B1 (ko) * 2015-04-30 2020-06-19 (주) 엔피홀딩스 마그네틱 코어 냉각용 냉각키트 및 이를 구비한 플라즈마 반응기
US11037764B2 (en) * 2017-05-06 2021-06-15 Applied Materials, Inc. Modular microwave source with local Lorentz force
US11094508B2 (en) 2018-12-14 2021-08-17 Applied Materials, Inc. Film stress control for plasma enhanced chemical vapor deposition
KR102409312B1 (ko) * 2020-09-28 2022-06-16 (주)아이작리서치 플라즈마 원자층 증착 장치

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JP2603331B2 (ja) * 1989-02-21 1997-04-23 日本電信電話株式会社 パルスガスノズル装置およびパルスガスノズル反応装置
JPH0689796A (ja) * 1992-09-09 1994-03-29 Kobe Steel Ltd Ｐｉｇ型イオン源
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3436608B2 (ja) * 1995-03-17 2003-08-11 株式会社サムコインターナショナル研究所 光導波路チップの製造方法
US5683517A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
JPH09180897A (ja) * 1995-12-12 1997-07-11 Applied Materials Inc 高密度プラズマリアクタのためのガス供給装置
JP2929275B2 (ja) * 1996-10-16 1999-08-03 株式会社アドテック 透磁コアを有する誘導結合型−平面状プラズマの発生装置
JPH10134997A (ja) * 1996-10-24 1998-05-22 Samsung Electron Co Ltd ２次電位による放電を除去したプラズマ処理装置
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
EP0908923B1 (en) * 1997-10-10 2003-04-02 European Community Apparatus to produce large inductive plasma for plasma processing

Also Published As

Publication number Publication date
EP1089319B1 (en) 2009-01-07
DK1089319T3 (da) 2009-04-06
NO20021492L (no) 2002-05-27
NO327017B1 (no) 2009-04-06
WO2001024220A2 (en) 2001-04-05
KR20020048415A (ko) 2002-06-22
DE69940260D1 (de) 2009-02-26
CA2386078C (en) 2010-03-30
KR100797206B1 (ko) 2008-01-22
WO2001024220A3 (en) 2001-06-21
US6682630B1 (en) 2004-01-27
NO20021492D0 (no) 2002-03-26
EP1089319A1 (en) 2001-04-04
CA2386078A1 (en) 2001-04-05
ES2320501T3 (es) 2009-05-22
ATE420453T1 (de) 2009-01-15
JP2003510780A (ja) 2003-03-18

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