IL145608A0 - Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth - Google Patents

Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

Info

Publication number
IL145608A0
IL145608A0 IL14560800A IL14560800A IL145608A0 IL 145608 A0 IL145608 A0 IL 145608A0 IL 14560800 A IL14560800 A IL 14560800A IL 14560800 A IL14560800 A IL 14560800A IL 145608 A0 IL145608 A0 IL 145608A0
Authority
IL
Israel
Prior art keywords
deposit
isolation process
fill oxide
trench
oxide prior
Prior art date
Application number
IL14560800A
Other languages
English (en)
Original Assignee
Silicon Valley Group Thermal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group Thermal filed Critical Silicon Valley Group Thermal
Publication of IL145608A0 publication Critical patent/IL145608A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
IL14560800A 1999-04-02 2000-03-31 Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth IL145608A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12752099P 1999-04-02 1999-04-02
PCT/US2000/008650 WO2000060659A1 (en) 1999-04-02 2000-03-31 Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

Publications (1)

Publication Number Publication Date
IL145608A0 true IL145608A0 (en) 2002-06-30

Family

ID=22430554

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14560800A IL145608A0 (en) 1999-04-02 2000-03-31 Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

Country Status (10)

Country Link
US (1) US6387764B1 (ko)
EP (1) EP1181718A4 (ko)
JP (1) JP2002541664A (ko)
KR (1) KR100424705B1 (ko)
CN (1) CN1174477C (ko)
AU (1) AU4059800A (ko)
CA (1) CA2364975A1 (ko)
IL (1) IL145608A0 (ko)
TW (1) TW578265B (ko)
WO (1) WO2000060659A1 (ko)

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Also Published As

Publication number Publication date
CN1174477C (zh) 2004-11-03
EP1181718A1 (en) 2002-02-27
AU4059800A (en) 2000-10-23
CA2364975A1 (en) 2000-10-12
KR20020007353A (ko) 2002-01-26
TW578265B (en) 2004-03-01
US6387764B1 (en) 2002-05-14
WO2000060659A9 (en) 2002-06-06
EP1181718A4 (en) 2005-03-30
WO2000060659A1 (en) 2000-10-12
JP2002541664A (ja) 2002-12-03
KR100424705B1 (ko) 2004-03-27
CN1351762A (zh) 2002-05-29

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