IL138518A0 - Radiation- sensitive resin composition - Google Patents
Radiation- sensitive resin compositionInfo
- Publication number
- IL138518A0 IL138518A0 IL13851800A IL13851800A IL138518A0 IL 138518 A0 IL138518 A0 IL 138518A0 IL 13851800 A IL13851800 A IL 13851800A IL 13851800 A IL13851800 A IL 13851800A IL 138518 A0 IL138518 A0 IL 138518A0
- Authority
- IL
- Israel
- Prior art keywords
- radiation
- resin composition
- sensitive resin
- exhibiting
- iii
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26411099 | 1999-09-17 | ||
JP29129199A JP4123654B2 (ja) | 1999-10-13 | 1999-10-13 | 感放射線性樹脂組成物 |
JP32522299 | 1999-11-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL138518A0 true IL138518A0 (en) | 2001-10-31 |
Family
ID=27335274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13851800A IL138518A0 (en) | 1999-09-17 | 2000-09-17 | Radiation- sensitive resin composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US6482568B1 (fr) |
EP (1) | EP1085379B1 (fr) |
KR (1) | KR100684220B1 (fr) |
AT (1) | ATE315245T1 (fr) |
DE (1) | DE60025297T2 (fr) |
IL (1) | IL138518A0 (fr) |
SG (1) | SG125883A1 (fr) |
TW (1) | TWI272453B (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382960B1 (ko) * | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
JP4061801B2 (ja) | 2000-01-24 | 2008-03-19 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
WO2001055789A2 (fr) * | 2000-01-25 | 2001-08-02 | Infineon Technologies Ag | Resine amplifiee chimiquement et soumise a des ondes courtes |
US6623907B2 (en) | 2000-02-04 | 2003-09-23 | Jsr Corporation | Radiation-sensitive resin composition |
US6777157B1 (en) * | 2000-02-26 | 2004-08-17 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising same |
JP4370668B2 (ja) * | 2000-03-29 | 2009-11-25 | Jsr株式会社 | メッキ造形物製造用ポジ型感放射線性樹脂組成物およびメッキ造形物の製造方法 |
JP2001281874A (ja) * | 2000-03-31 | 2001-10-10 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用反射防止膜形成用組成物およびこれを用いたレジスト積層体 |
TWI295284B (fr) * | 2000-04-27 | 2008-04-01 | Shinetsu Chemical Co | |
JP2002072477A (ja) * | 2000-06-12 | 2002-03-12 | Jsr Corp | 感放射線性樹脂組成物 |
JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6447980B1 (en) * | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
JP4438218B2 (ja) * | 2000-11-16 | 2010-03-24 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6696216B2 (en) * | 2001-06-29 | 2004-02-24 | International Business Machines Corporation | Thiophene-containing photo acid generators for photolithography |
US7192681B2 (en) * | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
KR100784672B1 (ko) * | 2001-08-20 | 2007-12-12 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
TW200403522A (en) * | 2002-03-01 | 2004-03-01 | Shipley Co Llc | Photoresist compositions |
US7531286B2 (en) * | 2002-03-15 | 2009-05-12 | Jsr Corporation | Radiation-sensitive resin composition |
JP4048824B2 (ja) * | 2002-05-09 | 2008-02-20 | Jsr株式会社 | 感放射線性樹脂組成物 |
TWI314943B (en) * | 2002-08-29 | 2009-09-21 | Radiation-sensitive resin composition | |
JP3937996B2 (ja) * | 2002-10-08 | 2007-06-27 | Jsr株式会社 | 感放射性樹脂組成物 |
AU2003280710A1 (en) * | 2002-11-05 | 2004-06-07 | Jsr Corporation | Acrylic copolymer and radiation-sensitive resin composition |
JP4140506B2 (ja) * | 2003-10-28 | 2008-08-27 | Jsr株式会社 | 感放射線性樹脂組成物 |
DE10358081A1 (de) * | 2003-12-10 | 2005-07-21 | Basf Ag | α-(1'-Hydroxyalkyl)acrylate enthaltende Beschichtungsmassen |
US7147985B2 (en) * | 2004-03-31 | 2006-12-12 | Intel Corporation | Resist compounds including acid labile groups having hydrophilic groups attached thereto |
JP4657899B2 (ja) * | 2005-11-30 | 2011-03-23 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
TWI528106B (zh) * | 2008-07-14 | 2016-04-01 | Jsr股份有限公司 | 敏輻射線性樹脂組成物 |
US20120122031A1 (en) * | 2010-11-15 | 2012-05-17 | International Business Machines Corporation | Photoresist composition for negative development and pattern forming method using thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
KR100261022B1 (ko) | 1996-10-11 | 2000-09-01 | 윤종용 | 화학증폭형 레지스트 조성물 |
KR100245410B1 (ko) | 1997-12-02 | 2000-03-02 | 윤종용 | 감광성 폴리머 및 그것을 이용한 화학증폭형 레지스트 조성물 |
KR100557368B1 (ko) | 1998-01-16 | 2006-03-10 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
JP3738562B2 (ja) * | 1998-02-19 | 2006-01-25 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4131062B2 (ja) * | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
KR100441734B1 (ko) * | 1998-11-02 | 2004-08-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 |
US6403280B1 (en) * | 1999-04-28 | 2002-06-11 | Jsr Corporation | Radiation sensitive resin composition |
-
2000
- 2000-09-14 EP EP00120000A patent/EP1085379B1/fr not_active Expired - Lifetime
- 2000-09-14 US US09/662,160 patent/US6482568B1/en not_active Expired - Fee Related
- 2000-09-14 DE DE60025297T patent/DE60025297T2/de not_active Expired - Lifetime
- 2000-09-14 AT AT00120000T patent/ATE315245T1/de not_active IP Right Cessation
- 2000-09-15 TW TW089119006A patent/TWI272453B/zh not_active IP Right Cessation
- 2000-09-16 KR KR1020000054488A patent/KR100684220B1/ko not_active IP Right Cessation
- 2000-09-16 SG SG200004850A patent/SG125883A1/en unknown
- 2000-09-17 IL IL13851800A patent/IL138518A0/xx unknown
Also Published As
Publication number | Publication date |
---|---|
EP1085379A1 (fr) | 2001-03-21 |
KR20010050495A (ko) | 2001-06-15 |
US6482568B1 (en) | 2002-11-19 |
SG125883A1 (en) | 2006-10-30 |
ATE315245T1 (de) | 2006-02-15 |
DE60025297D1 (de) | 2006-03-30 |
KR100684220B1 (ko) | 2007-02-28 |
DE60025297T2 (de) | 2006-08-17 |
TWI272453B (en) | 2007-02-01 |
EP1085379B1 (fr) | 2006-01-04 |
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