IL135062A0 - Electron devices for single electron and nuclear spin measurement - Google Patents

Electron devices for single electron and nuclear spin measurement

Info

Publication number
IL135062A0
IL135062A0 IL13506298A IL13506298A IL135062A0 IL 135062 A0 IL135062 A0 IL 135062A0 IL 13506298 A IL13506298 A IL 13506298A IL 13506298 A IL13506298 A IL 13506298A IL 135062 A0 IL135062 A0 IL 135062A0
Authority
IL
Israel
Prior art keywords
electron
nuclear spin
spin measurement
devices
single electron
Prior art date
Application number
IL13506298A
Other languages
English (en)
Original Assignee
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd filed Critical Unisearch Ltd
Publication of IL135062A0 publication Critical patent/IL135062A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Mathematical Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IL13506298A 1997-09-17 1998-09-17 Electron devices for single electron and nuclear spin measurement IL135062A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPO9268A AUPO926897A0 (en) 1997-09-17 1997-09-17 Quantum computer
PCT/AU1998/000778 WO1999014614A1 (en) 1997-09-17 1998-09-17 Electron devices for single electron and nuclear spin measurement

Publications (1)

Publication Number Publication Date
IL135062A0 true IL135062A0 (en) 2001-05-20

Family

ID=3803551

Family Applications (2)

Application Number Title Priority Date Filing Date
IL13506298A IL135062A0 (en) 1997-09-17 1998-09-17 Electron devices for single electron and nuclear spin measurement
IL13492098A IL134920A (en) 1997-09-17 1998-09-17 Quantum computer

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL13492098A IL134920A (en) 1997-09-17 1998-09-17 Quantum computer

Country Status (12)

Country Link
US (2) US6369404B1 (da)
EP (2) EP1025449A4 (da)
JP (2) JP4819993B2 (da)
KR (2) KR20010030601A (da)
CN (2) CN1135700C (da)
AU (1) AUPO926897A0 (da)
CA (2) CA2304185A1 (da)
IL (2) IL135062A0 (da)
IN (1) IN192584B (da)
TW (2) TW423046B (da)
WO (2) WO1999014614A1 (da)
ZA (2) ZA988528B (da)

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JP3427179B2 (ja) * 2000-02-16 2003-07-14 東北大学長 核スピン制御素子及びその制御方法
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US7097708B2 (en) * 2001-08-27 2006-08-29 Qucor Pty Ltd. Substituted donor atoms in silicon crystal for quantum computer
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Also Published As

Publication number Publication date
EP1025449A4 (en) 2003-04-02
IL134920A0 (en) 2001-05-20
CA2304185A1 (en) 1999-03-25
KR20010030601A (ko) 2001-04-16
JP2001516962A (ja) 2001-10-02
ZA988528B (en) 1999-03-18
CN1270674A (zh) 2000-10-18
TW423046B (en) 2001-02-21
IN192584B (da) 2004-05-08
JP4819994B2 (ja) 2011-11-24
WO1999014858A1 (en) 1999-03-25
TW423028B (en) 2001-02-21
JP2001516974A (ja) 2001-10-02
IL134920A (en) 2003-11-23
AUPO926897A0 (en) 1997-10-09
CN1135700C (zh) 2004-01-21
JP4819993B2 (ja) 2011-11-24
CN1132016C (zh) 2003-12-24
US6472681B1 (en) 2002-10-29
EP1016216A4 (en) 2002-05-08
EP1016216A1 (en) 2000-07-05
US6369404B1 (en) 2002-04-09
ZA988530B (en) 1999-03-18
WO1999014614A1 (en) 1999-03-25
KR20010030600A (ko) 2001-04-16
CN1278967A (zh) 2001-01-03
CA2304045A1 (en) 1999-03-25
EP1025449A1 (en) 2000-08-09

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