IL129658A0 - Aqueous developing solutions for reduced developer residue - Google Patents

Aqueous developing solutions for reduced developer residue

Info

Publication number
IL129658A0
IL129658A0 IL12965899A IL12965899A IL129658A0 IL 129658 A0 IL129658 A0 IL 129658A0 IL 12965899 A IL12965899 A IL 12965899A IL 12965899 A IL12965899 A IL 12965899A IL 129658 A0 IL129658 A0 IL 129658A0
Authority
IL
Israel
Prior art keywords
oxide units
layer
photoresist
surfactant
developing solutions
Prior art date
Application number
IL12965899A
Other languages
English (en)
Original Assignee
Nichigo Morton Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichigo Morton Co Ltd filed Critical Nichigo Morton Co Ltd
Publication of IL129658A0 publication Critical patent/IL129658A0/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Separation Of Suspended Particles By Flocculating Agents (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Removal Of Specific Substances (AREA)
IL12965899A 1998-04-29 1999-04-28 Aqueous developing solutions for reduced developer residue IL129658A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/069,518 US5922522A (en) 1998-04-29 1998-04-29 Aqueous developing solutions for reduced developer residue

Publications (1)

Publication Number Publication Date
IL129658A0 true IL129658A0 (en) 2000-02-29

Family

ID=22089531

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12965899A IL129658A0 (en) 1998-04-29 1999-04-28 Aqueous developing solutions for reduced developer residue

Country Status (10)

Country Link
US (1) US5922522A (pt)
EP (1) EP0953880B1 (pt)
KR (1) KR100326617B1 (pt)
CN (1) CN1141622C (pt)
AT (1) ATE232994T1 (pt)
BR (1) BR9901322A (pt)
CA (1) CA2270013A1 (pt)
DE (1) DE69905417T2 (pt)
IL (1) IL129658A0 (pt)
SG (1) SG80021A1 (pt)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6248506B1 (en) * 1998-12-04 2001-06-19 Nichigo-Morton Aqueous developing solutions for reduced developer residue
US6455234B1 (en) 1999-05-04 2002-09-24 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and their use in photoresist developers
US6281170B1 (en) 1999-10-18 2001-08-28 Air Products And Chemicals, Inc. Surface tension reduction with N,N,N'-trialkkyl ureas
JP2001215690A (ja) 2000-01-04 2001-08-10 Air Prod And Chem Inc アセチレン列ジオールエチレンオキシド／プロピレンオキシド付加物および現像剤におけるその使用
US6686126B2 (en) 2000-07-14 2004-02-03 Fuji Photo Film Co., Ltd. Developing solution for photosensitive lithographic printing plate, plate-making method of lithographic printing plate, and photosensitive lithographic printing plate
US6649324B1 (en) * 2000-08-14 2003-11-18 Kodak Polychrome Graphics Llc Aqueous developer for lithographic printing plates
US6503694B1 (en) * 2001-06-12 2003-01-07 Chi Mei Corporation Developer solution and edge bead remover composition
JP2003021901A (ja) * 2001-07-05 2003-01-24 Fuji Photo Film Co Ltd 感光性平版印刷版の光重合方法
US6756183B2 (en) 2001-08-24 2004-06-29 Fuji Photo Film Co., Ltd. Method for preparing lithographic printing plate
US20030196685A1 (en) * 2001-12-18 2003-10-23 Shipley Company, L.L.C. Cleaning composition and method
EP1335016A1 (en) * 2002-02-06 2003-08-13 Shipley Company LLC Cleaning composition
JP2003302770A (ja) * 2002-02-08 2003-10-24 Fuji Photo Film Co Ltd 画像形成方法
US6900003B2 (en) * 2002-04-12 2005-05-31 Shipley Company, L.L.C. Photoresist processing aid and method
JP2004252395A (ja) * 2002-05-07 2004-09-09 Shipley Co Llc 残渣削減安定濃縮物
US6887654B2 (en) * 2002-05-07 2005-05-03 Shipley Company, L.L.C. Residue and scum reducing composition and method
JP2004163904A (ja) * 2002-09-30 2004-06-10 Rohm & Haas Electronic Materials Llc 改善された光開始剤
KR20050101458A (ko) * 2004-04-19 2005-10-24 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
US20050282093A1 (en) * 2004-06-16 2005-12-22 Dammel Ralph R Aqueous edge bead remover
US7094523B1 (en) 2005-11-30 2006-08-22 Kesheng Feng Developer solution and process for use
CN102540771A (zh) * 2010-12-24 2012-07-04 无锡华润上华半导体有限公司 正性光刻胶用显影液及光刻工艺中的显影方法
CN104597727A (zh) * 2015-01-14 2015-05-06 深圳市国华光电科技有限公司 一种kmpr光刻胶用koh显影液
KR102378341B1 (ko) * 2015-06-11 2022-03-24 주식회사 이엔에프테크놀로지 포토레지스트 현상액
WO2022114208A1 (ja) * 2020-11-30 2022-06-02 富士フイルム株式会社 フレキソ印刷版用水性現像液およびフレキソ印刷版の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3884825D1 (de) * 1987-02-16 1993-11-18 Konishiroku Photo Ind Entwickler für lichtempfindliche lithographische Druckplatte, gemeinschaftlich verarbeitungsfähig für den Negativ-Typ und den Positiv-Typ und Entwicklerzusammensetzung für lichtempfindliches Material.
US5364736A (en) * 1987-12-07 1994-11-15 Morton International, Inc. Photoimageable compositions
JP2543742B2 (ja) * 1988-04-07 1996-10-16 富士写真フイルム株式会社 ポジ型フオトレジスト用現像液
US5122438A (en) * 1989-11-02 1992-06-16 Konica Corporation Method for developing a waterless light-sensitive lithographic plate
JPH04163556A (ja) * 1990-10-29 1992-06-09 Konica Corp 感光性平版印刷版の処理方法及び処理装置
JP2866951B2 (ja) * 1990-11-28 1999-03-08 富士写真フイルム株式会社 ハロゲン化銀カラー写真感光材料の処理方法
JP2748057B2 (ja) * 1991-07-22 1998-05-06 富士写真フイルム株式会社 画像形成方法及びアルカリ性現像液
JPH0572686A (ja) * 1991-09-11 1993-03-26 Konica Corp ハロゲン化銀写真感光材料
US5532116A (en) * 1992-01-13 1996-07-02 Fuji Photo Film Co., Ltd. Aqueous alkaline developing solution
JP3094716B2 (ja) * 1992-01-16 2000-10-03 富士写真フイルム株式会社 ハロゲン化銀カラー写真感光材料の処理方法
US5457011A (en) * 1993-12-27 1995-10-10 Eastman Kodak Company Photographic developing composition containing a sludge inhibiting agent and use thereof in the high contrast development of nucleated photographic elements
US5364737A (en) * 1994-01-25 1994-11-15 Morton International, Inc. Waterbone photoresists having associate thickeners
JP2937801B2 (ja) * 1994-03-31 1999-08-23 東京応化工業株式会社 レジスト用現像原液
DE4419166A1 (de) * 1994-06-01 1995-12-07 Hoechst Ag Entwickler für Photoresistschichten
JPH0810600A (ja) * 1994-06-30 1996-01-16 Toho Chem Ind Co Ltd 感光性樹脂工業用消泡分散剤
US5609991A (en) * 1995-02-10 1997-03-11 Morton International, Inc. Photoimageable composition having improved alkaline process resistance and tack-free surface for contact imaging
US5576145A (en) * 1995-02-10 1996-11-19 Morton International, Inc. Esterified styrene/maleic anhydride polymer and polymer-containing photoimageable composition having improved alkaline process resistance
US5998102A (en) * 1997-10-06 1999-12-07 Agfa Corporation Etch inhibitors in developer for lithographic printing plates

Also Published As

Publication number Publication date
EP0953880B1 (en) 2003-02-19
CN1141622C (zh) 2004-03-10
CA2270013A1 (en) 1999-10-29
ATE232994T1 (de) 2003-03-15
EP0953880A2 (en) 1999-11-03
DE69905417T2 (de) 2003-08-28
DE69905417D1 (de) 2003-03-27
BR9901322A (pt) 2000-03-14
CN1233783A (zh) 1999-11-03
SG80021A1 (en) 2001-04-17
US5922522A (en) 1999-07-13
EP0953880A3 (en) 1999-11-17
KR100326617B1 (ko) 2002-03-02
KR19990083501A (ko) 1999-11-25

Similar Documents

Publication Publication Date Title
SG80021A1 (en) Aqueous developing solutions for reduced developer residue
EP0907109B1 (en) Process for device fabrication using a radiation-sensitive resist material
EP0062733B1 (en) Metal ion-free photoresist developer composition
TW353159B (en) Method of developing positive photoresist and compositions therefor
US6063550A (en) Aqueous developing solutions for reduced developer residue
TW329030B (en) Resist patterns
US6248506B1 (en) Aqueous developing solutions for reduced developer residue
KR870011503A (ko) 혼합 에스테르 o-퀴논 감광제
US20100003468A1 (en) Method of forming microfined resist pattern
EP0097282A2 (en) Developer compositions for photoresists
US4626491A (en) Deep ultra-violet lithographic resist composition and process of using
EP0584780B1 (en) Process for producing printed wiring board
US20030215754A1 (en) Residue reducing stable concentrate
WO2013070511A1 (en) Hybrid photoresist composition and pattern forming method using thereof
EP0211350A2 (en) Photoresist composition and method of applying same
KR870011502A (ko) 감광제 조성물
JPH05323590A (ja) 化学増幅型レジスト組成物
WO2004053594A2 (en) High sensitivity resist compositions for electron-based lithography
KR100201227B1 (ko) 포지티브형 포토레지스트 조성물 및 그 조성물을 이용하는 미세 패턴 형성방법
JPH11143078A (ja) 化学増幅系レジスト