IL112826A - Method for settling a deposited plasma polymer layer - Google Patents
Method for settling a deposited plasma polymer layerInfo
- Publication number
- IL112826A IL112826A IL11282695A IL11282695A IL112826A IL 112826 A IL112826 A IL 112826A IL 11282695 A IL11282695 A IL 11282695A IL 11282695 A IL11282695 A IL 11282695A IL 112826 A IL112826 A IL 112826A
- Authority
- IL
- Israel
- Prior art keywords
- pdp
- plasma
- integrated circuit
- gas
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 47
- 238000000151 deposition Methods 0.000 title claims description 15
- 229920000642 polymer Polymers 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 4
- 239000005977 Ethylene Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 37
- 210000002381 plasma Anatomy 0.000 description 26
- 230000008569 process Effects 0.000 description 10
- 238000002679 ablation Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 101100328519 Caenorhabditis elegans cnt-2 gene Proteins 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL11282695A IL112826A (en) | 1995-02-28 | 1995-02-28 | Method for settling a deposited plasma polymer layer |
| CA002214109A CA2214109A1 (en) | 1995-02-28 | 1996-02-27 | An improved laser ablateable material |
| JP8526446A JPH11502060A (ja) | 1995-02-28 | 1996-02-27 | 改良されたレーザー融蝕性材料 |
| US08/894,540 US6255718B1 (en) | 1995-02-28 | 1996-02-27 | Laser ablateable material |
| EP96908627A EP0812477A4 (en) | 1995-02-28 | 1996-02-27 | AN IMPROVED LASER-DETECTABLE MATERIAL |
| KR1019970706003A KR19980702598A (ko) | 1995-02-28 | 1996-02-27 | 레이져에 의해 제거 가능한 개량 물질 |
| PCT/US1996/002920 WO1996027212A1 (en) | 1995-02-28 | 1996-02-27 | An improved laser ablateable material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL11282695A IL112826A (en) | 1995-02-28 | 1995-02-28 | Method for settling a deposited plasma polymer layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL112826A0 IL112826A0 (en) | 1995-05-26 |
| IL112826A true IL112826A (en) | 1998-09-24 |
Family
ID=11067145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL11282695A IL112826A (en) | 1995-02-28 | 1995-02-28 | Method for settling a deposited plasma polymer layer |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0812477A4 (ko) |
| JP (1) | JPH11502060A (ko) |
| KR (1) | KR19980702598A (ko) |
| CA (1) | CA2214109A1 (ko) |
| IL (1) | IL112826A (ko) |
| WO (1) | WO1996027212A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8268675B2 (en) * | 2011-02-11 | 2012-09-18 | Nordson Corporation | Passivation layer for semiconductor device packaging |
| KR102394994B1 (ko) | 2013-09-04 | 2022-05-04 | 도쿄엘렉트론가부시키가이샤 | 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리 |
| US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
| US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| GB2529620A (en) * | 2014-08-18 | 2016-03-02 | Flexenable Ltd | Patterning layer stacks for electronic devices |
| US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
| JP7356902B2 (ja) | 2016-07-15 | 2023-10-05 | ブルーワー サイエンス アイ エヌ シー． | レーザーアブレーションの誘電性物質 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4177474A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| EP0050973B1 (en) * | 1980-10-28 | 1986-01-22 | Kabushiki Kaisha Toshiba | Masking process for semiconductor devices using a polymer film |
| US4374179A (en) * | 1980-12-18 | 1983-02-15 | Honeywell Inc. | Plasma polymerized ethane for interlayer dielectric |
| JPS5893241A (ja) * | 1981-11-30 | 1983-06-02 | Sony Corp | 半導体装置 |
| US4517223A (en) * | 1982-09-24 | 1985-05-14 | Sovonics Solar Systems | Method of making amorphous semiconductor alloys and devices using microwave energy |
| ATE80955T1 (de) * | 1984-06-20 | 1992-10-15 | Gould Inc | Laserverfahren zur photomaskenreparatur. |
| US5329152A (en) * | 1986-11-26 | 1994-07-12 | Quick Technologies Ltd. | Ablative etch resistant coating for laser personalization of integrated circuits |
| US5310624A (en) * | 1988-01-29 | 1994-05-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
| WO1989007285A1 (en) * | 1988-01-29 | 1989-08-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
| US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
| US5302547A (en) * | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
| WO1995006900A1 (fr) * | 1993-09-03 | 1995-03-09 | Hitachi, Ltd. | Procede et appareil de realisation de motifs |
-
1995
- 1995-02-28 IL IL11282695A patent/IL112826A/en not_active IP Right Cessation
-
1996
- 1996-02-27 EP EP96908627A patent/EP0812477A4/en not_active Withdrawn
- 1996-02-27 KR KR1019970706003A patent/KR19980702598A/ko not_active Application Discontinuation
- 1996-02-27 CA CA002214109A patent/CA2214109A1/en not_active Abandoned
- 1996-02-27 WO PCT/US1996/002920 patent/WO1996027212A1/en not_active Application Discontinuation
- 1996-02-27 JP JP8526446A patent/JPH11502060A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980702598A (ko) | 1998-08-05 |
| WO1996027212A1 (en) | 1996-09-06 |
| IL112826A0 (en) | 1995-05-26 |
| EP0812477A4 (en) | 1998-10-07 |
| JPH11502060A (ja) | 1999-02-16 |
| CA2214109A1 (en) | 1996-09-06 |
| EP0812477A1 (en) | 1997-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |